公开(公告)号：USD353388S

公开(公告)日：1994-12-13

申请号：US9540

申请日：1993-06-17

申请人： Takeshi Matsushita

设计人： Takeshi Matsushita

公开(公告)号：US5282173A

公开(公告)日：1994-01-25

申请号：US877923

申请日：1992-05-04

申请人： Fumio Miyaji ,  Takeshi Matsushita

发明人： Fumio Miyaji ,  Takeshi Matsushita

IPC分类号： G11C5/14 ,  G11C8/10 ,  G11C8/00

CPC分类号： G11C8/10 ,  G11C5/14

摘要： A semiconductor memory device including an address decode signal transmission circuit comprising address buffers; a predecoder; address buses provided before a main decode; a transmission circuit for outputting predecoded signals to the address buses while limiting amplitude thereof; and a receiving circuit provided before the main decoder for differentially amplifying signals from the address buses, wherein the memory cell array is divided into a plural number of sub-blocks and power can be selectively supplied to at least one of the sub-blocks.

摘要翻译： 一种包括地址解码信号传输电路的半导体存储器件，包括地址缓冲器; 预解码器 在主要解码之前提供地址总线; 一个传输电路，用于在预定解码信号的幅度被限制的同时向地址总线输出; 以及在主解码器之前设置的差分放大来自地址总线的信号的接收电路，其中存储单元阵列被划分成多个子块，并且能够选择性地向至少一个子块提供功率。

公开(公告)号：US4393337A

公开(公告)日：1983-07-12

申请号：US22306

申请日：1979-03-20

申请人： Tamiji Nagai ,  Takeshi Matsushita

发明人： Tamiji Nagai ,  Takeshi Matsushita

IPC分类号： H03K3/352 ,  H01L27/082 ,  H03K3/53 ,  H03K3/57 ,  H03K4/62 ,  H03K4/83 ,  H03K17/60 ,  H03K17/723 ,  H03K17/732 ,  H04N3/16 ,  H01J29/70 ,  H01L29/74

CPC分类号： H01L27/0825 ,  H03K17/60 ,  H03K17/723 ,  H03K4/62 ,  H03K4/83

摘要： First and second gate-controlled switches are connected analogously to a Darlington transistor pair with a slow-response diode connected to delay application of a turn-off signal to the second gate-controlled switch until the first gate-controlled switch is fully turned OFF. The Darlington-type connection reduces a drive current required from a driving source to maintain the second gate-controlled switch fully ON for passing a load current therethrough.

摘要翻译： 第一和第二栅极控制开关类似地连接到达林顿晶体管对，其中连接有缓慢响应二极管，以将关断信号延迟施加到第二栅极控制开关，直到第一栅极控制开关完全断开。 达林顿型连接减少驱动源所需的驱动电流，以使第二栅极控制开关完全导通，以使负载电流通过。

公开(公告)号：US4176372A

公开(公告)日：1979-11-27

申请号：US857284

申请日：1977-12-05

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawana

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawana

IPC分类号： H01L21/314 ,  H01L23/29 ,  H01L27/06 ,  H01L27/092 ,  H01L29/34

CPC分类号： H01L27/0641 ,  H01L21/314 ,  H01L23/298 ,  H01L27/0927 ,  H01L2924/0002 ,  H01L2924/13091 ,  Y10S257/905

摘要： A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.

摘要翻译： 在单晶半导体衬底上形成多晶层作为钝化层，所述多晶层含有2至45原子％范围内的氧。 所述基板的表面与多晶硅层之间的表面状态的密度在禁带的中间部分小于1010 / cm2×eV，多晶层中固定电荷的界面密度小于1010 / cm 2。

公开(公告)号：US4081292A

公开(公告)日：1978-03-28

申请号：US678417

申请日：1976-04-19

申请人： Teruaki Aoki ,  Takeshi Matsushita ,  Tadayoshi Mifune ,  Motoaki Abe

发明人： Teruaki Aoki ,  Takeshi Matsushita ,  Tadayoshi Mifune ,  Motoaki Abe

IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/265 ,  H01L21/329 ,  H01L21/331 ,  H01L21/76 ,  H01L23/29 ,  H01L29/78 ,  H01L21/26

CPC分类号： H01L21/00 ,  H01L23/291 ,  H01L2924/0002

摘要： Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.

摘要翻译： 将硅离子注入到硅衬底上的二氧化硅层中，使得二氧化层转化为具有改善的钝化性质的半绝缘层。

公开(公告)号：US4062034A

公开(公告)日：1977-12-06

申请号：US679846

申请日：1976-04-23

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Mitsuru Shibasaki

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Mitsuru Shibasaki

IPC分类号： H01L21/00 ,  H01L21/205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/331 ,  H01L21/337 ,  H01L23/29 ,  H01L23/31 ,  H01L27/06 ,  H01L29/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165 ,  H01L29/43 ,  H01L29/45 ,  H01L29/73 ,  H01L29/737 ,  H01L29/80 ,  H01L29/808 ,  H01L29/161

CPC分类号： H01L29/802 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/314 ,  H01L21/31612 ,  H01L23/298 ,  H01L23/3171 ,  H01L23/3192 ,  H01L27/0623 ,  H01L29/04 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/165 ,  H01L29/432 ,  H01L29/456 ,  H01L29/73 ,  H01L29/7371 ,  H01L29/7375 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S148/113 ,  Y10S148/118 ,  Y10S148/122 ,  Y10S438/918

摘要： A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.

摘要翻译： 一种半导体器件，包括在衬底上形成有氧掺杂多晶或非晶硅层的硅衬底，以便与其形成异质结。 根据本发明形成的晶体管具有发射极 - 基极异质结并具有高电流增益。

公开(公告)号：US4003072A

公开(公告)日：1977-01-11

申请号：US520115

申请日：1974-11-01

申请人： Takeshi Matsushita ,  Hisao Hayashi

发明人： Takeshi Matsushita ,  Hisao Hayashi

IPC分类号： H01L29/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/34

CPC分类号： H01L29/0623 ,  H01L29/00 ,  H01L29/0619 ,  H01L29/1025

摘要： A semiconductor device including a substrate of semiconductor material having charge carriers of one conductivity type and a main region of opposite conductivity type. A ring of said opposite conductivity type is disposed around the main region and an auxiliary region of said opposite conductivity type is disposed on the opposite surface of the substrate. The said rings and the said auxiliary region are spaced from the main region by distances that permit the depletion region of the main region to reach the ring and the auxiliary region when the main region is reversed biased with respect to the substrate.

摘要翻译： 一种半导体器件，包括具有一种导电类型的电荷载流子和相反导电类型的主要区域的半导体材料的衬底。 所述相反导电类型的环设置在主区域周围，并且所述相反导电类型的辅助区域设置在衬底的相对表面上。 所述环和所述辅助区域与主区域间隔开距离，当主区域相对于衬底被反向偏置时，允许主区域的耗尽区域到达环和辅助区域。

公开(公告)号：US20130011901A1

公开(公告)日：2013-01-10

申请号：US13634263

申请日：2011-03-09

申请人： Takamitsu Hosoya ,  Isao Kii ,  Suguru Yoshida ,  Takeshi Matsushita

发明人： Takamitsu Hosoya ,  Isao Kii ,  Suguru Yoshida ,  Takeshi Matsushita

IPC分类号： C07D487/04 ,  C12N5/071 ,  C12N9/96

CPC分类号： C07D487/04 ,  C07D249/04 ,  C07K1/1077

摘要： The invention aims in establishing a method for modifying biomolecules using a reaction that efficiently modifies biomolecules and is widely applicable. The invention thus provides a cyclic compound containing two triazole rings formed by adding and ligating an azide compound possessing an azido group to each of the two carbon-carbon triple bond sites of an eight-membered cyclic skeleton of a cyclic diyne compound by a double click reaction; a method for producing a cyclic compound using a double click reaction; and a method for modifying biomolecules.

摘要翻译： 本发明旨在建立一种使用有效修饰生物分子的反应来修饰生物分子的方法，并且是广泛适用的。 因此，本发明提供一种环状化合物，其包含通过双键加成并连接具有叠氮基的叠氮化合物与环状二炔化合物的八元环骨架的两个碳 - 碳三键位点形成的两个三唑环 反应; 使用双键反应制备环状化合物的方法; 和一种修饰生物分子的方法。

公开(公告)号：US08159654B2

公开(公告)日：2012-04-17

申请号：US12477780

申请日：2009-06-03

申请人： Takeshi Matsushita

发明人： Takeshi Matsushita

IPC分类号： G03B27/62

CPC分类号： G03F1/62

摘要： A pressure body comprises: three or more pressure pins 40 that come into contact with a photomask 70 at downward positions in a pressure direction D; a main body 10 provided with an opening 16, the opening 16 supporting the pressure pins 40 so as to prevent the pins from dropping off downward, the opening 16 being able to change positions within a plane perpendicular to the pressure direction D, the pressure pins 40 being supported at said positions; a cover body 20 fixed to the main body 10 at an upward position in the pressure direction D; and a buffer member 30 located between the pressure pins 40 and the cover body 20 in the pressure direction D. The pressure body further comprises a cap pin 60, the cap pin 60 supported in the opening 16 so as to be prevented from dropping off downward, the cap pin 60 located in alignment with the pressure pins 40 so as to close off the opening 16, thereby preventing the buffer member 30 from being exposed downward.

摘要翻译： 压力体包括：在压力方向D的向下位置与光掩模70接触的三个或更多压力销40; 设置有开口16的主体10，支撑压力销40的开口16，以防止销向下脱落，开口16能够在垂直于压力方向D的平面内改变位置，压力销 40在所述位置被支持; 盖体20，其在压力方向D的上方固定在主体10上; 以及在压力方向D上位于压力销40和盖体20之间的缓冲构件30.压力体还包括帽销60，帽销60支撑在开口16中，以防止向下掉落 ，帽销60与压力销40对准，以便关闭开口16，从而防止缓冲构件30向下暴露。

公开(公告)号：US07872133B2

公开(公告)日：2011-01-18

申请号：US10561973

申请日：2004-06-22

申请人： Kazuyuki Ohmoto ,  Masashi Kato ,  Takeshi Matsushita ,  Seishi Katsumata ,  Junichiro Manako

发明人： Kazuyuki Ohmoto ,  Masashi Kato ,  Takeshi Matsushita ,  Seishi Katsumata ,  Junichiro Manako

IPC分类号： A61K31/437 ,  A61K31/438 ,  C07D401/02 ,  C07D401/14

CPC分类号： C07D471/04

摘要： The present invention relates to the compound represented by formula (I) A-X—Y—Z—B  (I) (wherein A is a cyclic group which may have a substituent(s); X is a single bond or a spacer; Y is a single bond or a spacer; Z is a single bond or a spacer; B is a hydrocarbon group which may have a substituent(s) or a cyclic group which may have a substituent(s)), a salt thereof, a solvate thereof or a prodrug thereof. The compound represented by formula (I), a salt thereof, a solvate thereof or a prodrug thereof is useful for preventive and/or therapeutic agent for a disease caused by stress.

摘要翻译： 本发明涉及由式（I）表示的化合物AX-Y-Z-B（I）（其中A是可以具有取代基的环状基团; X是单键或间隔基; Y是 单键或间隔基; Z为单键或间隔基; B为可具有取代基的烃基或可具有取代基的环状基团），其盐，其溶剂合物 或其前药。 由式（I）表示的化合物，其盐，其溶剂合物或其前药可用于由应激引起的疾病的预防和/或治疗剂。