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公开(公告)号:US20140224405A1
公开(公告)日:2014-08-14
申请号:US14345984
申请日:2012-02-24
申请人: Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
发明人: Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
CPC分类号: H01L21/02 , H01L21/67011 , H01L21/67092 , H01L21/67253 , H01L21/6831
摘要: A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated. The room-temperature bonding apparatus can more uniformly irradiate to the first activation surface and the second activation surface, so that the first substrate and the second substrate can be more appropriately bonded with each other, compared with another room-temperature bonding apparatus which irradiates the first activation surface and the second activation surface by using one beam source.
摘要翻译: 本发明的室温接合装置包括:多个第一光束源,被配置为发射照射到第一基板的第一激活表面的多个第一激活光束; 多个第二光束源,被配置为发射多个第二激活光束,其被照射到第二基板的第二激活表面; 以及压力焊接机构,其被配置为在所述第一激活表面和所述第二激活表面被照射之后使所述第一激活表面和所述第二激活表面接触来接合所述第一基板和所述第二基板。 与另外的室温接合装置相比,室温接合装置能够更均匀地照射到第一活化面和第二活化面,使得第一基板和第二基板能够更适当地接合 第一激活表面和第二激活表面。
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公开(公告)号:US20110277904A1
公开(公告)日:2011-11-17
申请号:US13139085
申请日:2009-09-29
申请人: Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
发明人: Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
CPC分类号: H01L21/6838 , B23K20/02 , B23K2101/40 , H01L21/67201 , Y10T156/10 , Y10T156/17
摘要: A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.
摘要翻译: 根据本发明的室温接合装置设置有具有减压的内部空间的负载锁定室; 以及设置在负载锁定室中的盒。 所述盒包括当所述基板被放置在所述盒上时形成为接触基板的岛部。 当基板被放置在盒上时,形成用于岛部分的流动通道,以将盒和基板之间的空间连接到外部。 因此,室温接合装置可以防止当内部空间减压时由于气体使基板移动到墨盒。
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公开(公告)号:US20110207291A1
公开(公告)日:2011-08-25
申请号:US13121584
申请日:2009-02-19
申请人: Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide , Takenori Suzuki
发明人: Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide , Takenori Suzuki
IPC分类号: H01L21/762 , H01L21/02
CPC分类号: H01L21/67092 , B23K17/00 , B23K37/0408 , B23K37/047 , B23K2101/40 , B29C65/7897 , H01L21/187 , H01L21/6833
摘要: A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.
摘要翻译: 晶片接合方法包括:通过向上保持机构7施加电压来保持具有上保持机构7的第一基板; 通过接合第一基板和保持有下保持机构8的第二基板来产生键合基板; 并且在交替施加到上保持机构7上的电压被衰减的电压之后从上保持机构7脱扣。通过施加与上保持机构7交替的衰减的电压,键合衬底与接合衬底之间的残留吸引力 上部保持机构7减少,从而能够在更短的时间内更可靠地使接合基板从保持机构拔出。 结果,第一基板和第二基板可以在更短的时间内粘合。
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公开(公告)号:US20110083801A1
公开(公告)日:2011-04-14
申请号:US12811177
申请日:2008-09-29
申请人: Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
发明人: Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
IPC分类号: B32B37/10
CPC分类号: B32B37/1009 , B23K20/02 , B32B37/10 , B32B2309/68 , H01L21/187 , H01L21/2007 , H01L21/67092 , H01L21/67253
摘要: Provided is a cold jointing apparatus, which comprises a discharge device, a gas feeding device, a pressure gauge, a clarifying device, a pressure controller and a pressing mechanism. The discharge device discharges a gas from the inside of a chamber. The gas feeding device feeds an introduction gas to the inside of the chamber. The pressure gauge measures the pressure in the chamber. The clarifying device clarifies a first board and a second board in the chamber when the measured pressure is at a predetermined degree of vacuum. The pressure controller controls both the discharge device and the gas feeding device so that the measured pressure may be equal to a target pressure. The pressing mechanism presses the first board and the second board in the chamber when the measured pressure is that target pressure.
摘要翻译: 提供一种冷接头装置,其包括排出装置,气体供给装置,压力计,澄清装置,压力控制器和按压机构。 排出装置从室内排出气体。 气体供给装置将引入气体供给到室的内部。 压力表测量室内的压力。 当测量的压力处于预定的真空度时,澄清装置澄清室中的第一板和第二板。 压力控制器控制排出装置和气体供给装置,使得测量的压力可以等于目标压力。 当所测量的压力为目标压力时,按压机构将腔室中的第一板和第二板按压。
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公开(公告)号:US20110011536A1
公开(公告)日:2011-01-20
申请号:US12919997
申请日:2008-03-11
申请人: Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Satoshi Tawara , Jun Utsumi , Yoichiro Tsumura , Kensuke Ide , Takenori Suzuki
发明人: Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Satoshi Tawara , Jun Utsumi , Yoichiro Tsumura , Kensuke Ide , Takenori Suzuki
CPC分类号: H01L21/67778 , H01L21/67092 , H01L21/6732 , H01L21/67748 , H01L21/68 , H01L21/683 , Y10T156/1744
摘要: A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate. Further, the room temperature bonding apparatus can use the angle adjustment mechanism to change a direction of the first substrate such that the first substrate and the second substrate come into parallel contact with each other, and uniformly impose the larger load on a bonding surface.
摘要翻译: 室温接合装置包括:角度调节机构,其将保持第一基板的第一样品台支撑到第一阶段,以便能够改变第一样品台的方向; 第一驱动装置,其以第一方向驱动第一级; 第二驱动装置,其驱动在不与第一方向平行的第二方向上保持第二基板的第二样品台; 以及当第二基板和第一基板彼此压接时支撑第一方向上的第二样品台的托架支撑台。 在这种情况下,室温接合装置可以在第一基板和第二基板上施加超过第二驱动装置的承受负荷的较大载荷。 此外,室温接合装置可以使用角度调节机构来改变第一基板的方向,使得第一基板和第二基板彼此平行接触,并且在接合表面上均匀地施加较大的负载。
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16.
公开(公告)号:US20130112334A1
公开(公告)日:2013-05-09
申请号:US13700929
申请日:2011-07-29
申请人: Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide
发明人: Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide
IPC分类号: B32B37/00
CPC分类号: B32B37/0046 , H01L21/67092 , H01L21/67109
摘要: A room temperature bonding method of the present invention includes a step of activating two substrates to prepare two activated substrates; a step of bonding the two activated substrates to produce a bonding resultant substrate; a step of performing annealing of the bonding resultant substrate to reduce residual stress of the bonding resultant substrate. According to such a room temperature bonding method, the residual stress of the bonding resultant substrate can be reduced and the quality can be improved.
摘要翻译: 本发明的室温接合方法包括激活两个基板以制备两个活化的基板的步骤; 键合两个激活的基板以产生接合的基板的步骤; 对接合的基板进行退火以减少接合的基板的残余应力的步骤。 根据这样的室温接合方法,能够降低接合的基板的残留应力,提高质量。
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公开(公告)号:US08602289B2
公开(公告)日:2013-12-10
申请号:US12438346
申请日:2007-09-06
申请人: Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人: Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
CPC分类号: H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2101/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
摘要翻译: 一种经由中间构件将多个基板室温接合的方法包括:通过物理地溅射多个靶材,在所述基板的待结合面上形成中间部件; 并通过离子束激活待结合的表面。 优选地,物理地溅射由多种类型的材料构成的靶。 由于中间构件的材料从从基板的待粘合表面排列在各个方向上的多个靶溅射,所以中间构件可以均匀地形成在待粘合的表面上。 此外,由于中间构件由多种材料组成,所以当中间构件由单一材料构成时难以粘合的基板的室温结合可以在不加热和过度压制基板的情况下进行 粘接。
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公开(公告)号:US08936998B2
公开(公告)日:2015-01-20
申请号:US13797521
申请日:2013-03-12
申请人: Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人: Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
IPC分类号: H01L21/30 , H01L21/302 , H01L21/324 , H01L21/20 , H01L23/00 , H01L31/0203
CPC分类号: H01L21/2007 , C03C27/06 , H01L24/28 , H01L24/31 , H01L24/75 , H01L24/83 , H01L31/0203 , H01L33/0079 , H01L2224/83099 , H01L2224/8385 , H01L2224/83894 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/07802 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/3512 , H01L2924/00
摘要: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
摘要翻译: 一种器件设置有:主要包含二氧化硅的第一衬底; 主要含有硅,化合物半导体,二氧化硅或氟化物的第二衬底; 以及布置在所述第一基板和所述第二基板之间的接合功能中间层。 通过室温接合将第一衬底接合到第二衬底,其中第一衬底的溅射的第一表面经由接合功能中间层与第二衬底的溅射的第二表面接触。 这里,接合功能中间层的材料选自氧化物,氟化物或氮化物的光学透明材料,该材料不同于第一衬底的主要成分并且不同于第二衬底的主要成分。
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19.
公开(公告)号:US20110214816A1
公开(公告)日:2011-09-08
申请号:US13102778
申请日:2011-05-06
申请人: Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人: Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
IPC分类号: B29C65/14
CPC分类号: H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2101/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
摘要翻译: 一种经由中间构件将多个基板室温接合的方法包括:通过物理地溅射多个靶材,在所述基板的待结合面上形成中间部件; 并通过离子束激活待结合的表面。 在这种情况下,优选由多种材料构成的靶物质溅射。 由于中间构件的材料从从基板的待粘合表面排列在各个方向上的多个靶溅射,所以中间构件可以均匀地形成在待粘合的表面上。 此外,由于中间构件由多种材料组成,所以当中间构件由单一材料构成时难以粘合的基板的室温结合可以在不加热和过度压制基板的情况下进行 粘接。
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公开(公告)号:US20100276723A1
公开(公告)日:2010-11-04
申请号:US12741916
申请日:2008-10-14
申请人: Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人: Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
CPC分类号: H01L21/2007 , C03C27/06 , H01L24/28 , H01L24/31 , H01L24/75 , H01L24/83 , H01L31/0203 , H01L33/0079 , H01L2224/83099 , H01L2224/8385 , H01L2224/83894 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/07802 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/3512 , H01L2924/00
摘要: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
摘要翻译: 一种器件设置有:主要包含二氧化硅的第一衬底; 主要含有硅,化合物半导体,二氧化硅或氟化物的第二衬底; 以及布置在所述第一基板和所述第二基板之间的接合功能中间层。 通过室温接合将第一衬底接合到第二衬底,其中第一衬底的溅射的第一表面经由接合功能中间层与第二衬底的溅射的第二表面接触。 这里,接合功能中间层的材料选自氧化物,氟化物或氮化物的光学透明材料,该材料不同于第一衬底的主要成分并且不同于第二衬底的主要成分。
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