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1.发明授权公开(公告)号：US08608048B2
公开(公告)日：2013-12-17
申请号：US13102778
申请日：2011-05-06
申请人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
CPC分类号： H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2101/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要： A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
摘要翻译： 一种经由中间构件将多个基板室温接合的方法包括：通过物理地溅射多个靶材，在所述基板的待结合面上形成中间部件; 并通过离子束激活待结合的表面。 在这种情况下，优选由多种材料构成的靶物质溅射。 由于中间构件的材料从从基板的待粘合表面排列在各个方向上的多个靶溅射，所以中间构件可以均匀地形成在待粘合的表面上。 此外，由于中间构件由多种材料组成，所以当中间构件由单一材料构成时难以粘合的基板的室温结合可以在不加热和过度压制基板的情况下进行 粘接。
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公开(公告)号：US08936998B2
公开(公告)日：2015-01-20
申请号：US13797521
申请日：2013-03-12
申请人： Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
IPC分类号： H01L21/30 , H01L21/302 , H01L21/324 , H01L21/20 , H01L23/00 , H01L31/0203
CPC分类号： H01L21/2007 , C03C27/06 , H01L24/28 , H01L24/31 , H01L24/75 , H01L24/83 , H01L31/0203 , H01L33/0079 , H01L2224/83099 , H01L2224/8385 , H01L2224/83894 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/07802 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/3512 , H01L2924/00
摘要： A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
摘要翻译： 一种器件设置有：主要包含二氧化硅的第一衬底; 主要含有硅，化合物半导体，二氧化硅或氟化物的第二衬底; 以及布置在所述第一基板和所述第二基板之间的接合功能中间层。 通过室温接合将第一衬底接合到第二衬底，其中第一衬底的溅射的第一表面经由接合功能中间层与第二衬底的溅射的第二表面接触。 这里，接合功能中间层的材料选自氧化物，氟化物或氮化物的光学透明材料，该材料不同于第一衬底的主要成分并且不同于第二衬底的主要成分。
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公开(公告)号：US20110214816A1
公开(公告)日：2011-09-08
申请号：US13102778
申请日：2011-05-06
申请人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
IPC分类号： B29C65/14
CPC分类号： H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2101/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要： A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
摘要翻译： 一种经由中间构件将多个基板室温接合的方法包括：通过物理地溅射多个靶材，在所述基板的待结合面上形成中间部件; 并通过离子束激活待结合的表面。 在这种情况下，优选由多种材料构成的靶物质溅射。 由于中间构件的材料从从基板的待粘合表面排列在各个方向上的多个靶溅射，所以中间构件可以均匀地形成在待粘合的表面上。 此外，由于中间构件由多种材料组成，所以当中间构件由单一材料构成时难以粘合的基板的室温结合可以在不加热和过度压制基板的情况下进行 粘接。
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公开(公告)号：US20100276723A1
公开(公告)日：2010-11-04
申请号：US12741916
申请日：2008-10-14
申请人： Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Jun Utsumi , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
CPC分类号： H01L21/2007 , C03C27/06 , H01L24/28 , H01L24/31 , H01L24/75 , H01L24/83 , H01L31/0203 , H01L33/0079 , H01L2224/83099 , H01L2224/8385 , H01L2224/83894 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/07802 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/3512 , H01L2924/00
摘要： A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
摘要翻译： 一种器件设置有：主要包含二氧化硅的第一衬底; 主要含有硅，化合物半导体，二氧化硅或氟化物的第二衬底; 以及布置在所述第一基板和所述第二基板之间的接合功能中间层。 通过室温接合将第一衬底接合到第二衬底，其中第一衬底的溅射的第一表面经由接合功能中间层与第二衬底的溅射的第二表面接触。 这里，接合功能中间层的材料选自氧化物，氟化物或氮化物的光学透明材料，该材料不同于第一衬底的主要成分并且不同于第二衬底的主要成分。
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5.发明申请DEVICE MANUFACTURED BY ROOM-TEMPERATURE BONDING, DEVICE MANUFACTURING METHOD, AND ROOM-TEMPERATURE BONDING APPARATUS 审中-公开通过室温接合制造的器件，器件制造方法和室温结合器公开(公告)号：US20100092786A1
公开(公告)日：2010-04-15
申请号：US12302873
申请日：2007-05-30
申请人： Jun Utsumi , Takayuki Goto , Kensuke Ide , Masahiro Funayama , Hideki Takagi
发明人： Jun Utsumi , Takayuki Goto , Kensuke Ide , Masahiro Funayama , Hideki Takagi
CPC分类号： B32B38/0008 , B23K20/02 , B23K20/22 , B32B37/14 , B32B2457/00 , B81C3/001 , B81C2203/032 , C23C14/14 , C23C14/3414 , C23C14/58 , Y10T428/31678
摘要： An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.
摘要翻译： 在第一基板和第二基板之间形成基板间材料层以产生粘结强度。 多个金属元素存在于基板间材料层中。 多个金属元素的界面元素存在比为0.07以上。 可以获得在室温下难以接合的基板（例如，SiO 2基板）结合以具有实际的接合强度的装置。
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公开(公告)号：US08602289B2
公开(公告)日：2013-12-10
申请号：US12438346
申请日：2007-09-06
申请人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
CPC分类号： H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2101/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要： A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
摘要翻译： 一种经由中间构件将多个基板室温接合的方法包括：通过物理地溅射多个靶材，在所述基板的待结合面上形成中间部件; 并通过离子束激活待结合的表面。 优选地，物理地溅射由多种类型的材料构成的靶。 由于中间构件的材料从从基板的待粘合表面排列在各个方向上的多个靶溅射，所以中间构件可以均匀地形成在待粘合的表面上。 此外，由于中间构件由多种材料组成，所以当中间构件由单一材料构成时难以粘合的基板的室温结合可以在不加热和过度压制基板的情况下进行 粘接。
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公开(公告)号：US20130213561A1
公开(公告)日：2013-08-22
申请号：US13797521
申请日：2013-03-12
申请人： Jun UTSUMI , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Jun UTSUMI , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
IPC分类号： H01L21/20
CPC分类号： H01L21/2007 , C03C27/06 , H01L24/28 , H01L24/31 , H01L24/75 , H01L24/83 , H01L31/0203 , H01L33/0079 , H01L2224/83099 , H01L2224/8385 , H01L2224/83894 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/07802 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/3512 , H01L2924/00
摘要： A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
摘要翻译： 一种器件设置有：主要包含二氧化硅的第一衬底; 主要含有硅，化合物半导体，二氧化硅或氟化物的第二衬底; 以及布置在所述第一基板和所述第二基板之间的接合功能中间层。 通过室温接合将第一衬底接合到第二衬底，其中第一衬底的溅射的第一表面经由接合功能中间层与第二衬底的溅射的第二表面接触。 这里，接合功能中间层的材料选自氧化物，氟化物或氮化物的光学透明材料，该材料不同于第一衬底的主要成分并且不同于第二衬底的主要成分。
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公开(公告)号：US20100000663A1
公开(公告)日：2010-01-07
申请号：US12438346
申请日：2007-09-06
申请人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
发明人： Takayuki Goto , Jun Utsumi , Kensuke Ide , Hideki Takagi , Masahiro Funayama
CPC分类号： H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2101/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要： A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.
摘要翻译： 一种经由中间构件将多个基板室温接合的方法包括：通过物理地溅射多个靶材，在所述基板的待结合面上形成中间部件; 并通过离子束激活待结合的表面。 在这种情况下，优选由多种材料构成的靶物质溅射。 由于中间构件的材料从从基板的待粘合表面排列在各个方向上的多个靶溅射，所以中间构件可以均匀地形成在待粘合的表面上。 此外，由于中间构件由多种材料组成，所以当中间构件由单一材料构成时难以粘合的基板的室温结合可以在不加热和过度压制基板的情况下进行 粘接。
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公开(公告)号：US09349918B2
公开(公告)日：2016-05-24
申请号：US14232517
申请日：2012-05-25
申请人： Yukio Kashima , Eriko Matsuura , Hiromi Nishihara , Takaharu Tashiro , Takafumi Ookawa , Hideki Hirayama , Sachie Fujikawa , Sung Won Youn , Hideki Takagi , Ryuichiro Kamimura , Yamato Osada
发明人： Yukio Kashima , Eriko Matsuura , Hiromi Nishihara , Takaharu Tashiro , Takafumi Ookawa , Hideki Hirayama , Sachie Fujikawa , Sung Won Youn , Hideki Takagi , Ryuichiro Kamimura , Yamato Osada
CPC分类号： H01L33/32 , H01L22/12 , H01L33/20 , H01L33/44 , H01L2933/0083
摘要： A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.
摘要翻译： 一种半导体发光元件，在其光提取层中包括具有不同折射率的两个系统（结构）的光子晶体周期性结构。 两个系统（结构）之间的界面满足布拉格散射条件，光子晶体周期结构具有光子带隙。
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10.发明授权Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate 有权半导体衬底，场效晶体管，集成电路以及半导体衬底的制造方法公开(公告)号：US09112035B2
公开(公告)日：2015-08-18
申请号：US13410872
申请日：2012-03-02
申请人： Hisashi Yamada , Masahiko Hata , Masafumi Yokoyama , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda , Hideki Takagi , Yuji Urabe
发明人： Hisashi Yamada , Masahiko Hata , Masafumi Yokoyama , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda , Hideki Takagi , Yuji Urabe
IPC分类号： H01L29/02 , H01L29/786 , H01L21/762 , H01L29/49 , H01L29/51 , H01L29/66
CPC分类号： H01L29/78681 , H01L21/76251 , H01L21/76256 , H01L29/4966 , H01L29/517 , H01L29/66742
摘要： A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.
摘要翻译： 半导体衬底包括衬底，绝缘层和半导体层。 绝缘层在衬底上并与衬底接触。 绝缘层包括无定形金属氧化物和无定形金属氮化物中的至少一种。 半导体层在绝缘层上方并与之接触。 半导体层通过晶体生长形成。
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