-
公开(公告)号：US07145397B2
公开(公告)日：2006-12-05
申请号：US10889059
申请日：2004-07-13
IPC分类号： H03F1/52
CPC分类号： H03F1/52
摘要： Disclosed is an output overvoltage protection circuit for a power amplifier having a plurality of stages, which comprises a monitor circuit for monitoring an output overvoltage of an output transistor in the final stage of the power amplifier and allowing a current to flow therethrough in response to the monitored output overvoltage, and a current mirror circuit for supplying a current proportional to the current from the monitor circuit in such a manner that the base bias of the first-stage transistor of the power amplifier is reduced in response to the current supplied from the current mirror circuit, to reduce the output of the final-stage output transistor.
摘要翻译： 公开了一种用于具有多级的功率放大器的输出过电压保护电路，其包括监视电路，用于监视功率放大器的最后级中的输出晶体管的输出过电压，并且允许电流响应于 监控的输出过电压，以及电流镜电路，用于提供与来自监视器电路的电流成比例的电流，使得功率放大器的第一级晶体管的基极偏置响应于从电流提供的电流而减小 镜像电路，以减少最终级输出晶体管的输出。
-
公开(公告)号：US5889434A
公开(公告)日：1999-03-30
申请号：US888543
申请日：1997-07-07
申请人： Teruyuki Shimura , Takeshi Miura , Tadashi Takagi
发明人： Teruyuki Shimura , Takeshi Miura , Tadashi Takagi
CPC分类号： H03F1/3241
摘要： A microwave power amplifier having n stages (n is an integer of at least two), which uses bipolar transistors as amplifying elements. Grounded electrodes, bias applying methods, and bias values of the bipolar transistors of the respective stages are set so that phase rotations of output powers of bipolar transistors of m stages (m is an integer of 1.ltoreq.m.ltoreq.n-1) among the n stages are canceled by phase rotation of at least one of the other bipolar transistors of the (n-m) stages. Therefore, the total phase rotation of the power amplifier can be neutralized, resulting in a microwave power amplifier having excellent distortion characteristics.
摘要翻译： 具有n级（n为至少2的整数）的微波功率放大器，其使用双极晶体管作为放大元件。 设置接地电极，偏置施加方法和各级双极晶体管的偏置值，使得m级双极型晶体管的输出功率的相位旋转（m为1≤n≤n-1的整数 ）通过（nm）级的至少一个其他双极晶体管的相位旋转而被抵消。 因此，可以中和功率放大器的总相位旋转，导致具有优异失真特性的微波功率放大器。
-
公开(公告)号：US5760457A
公开(公告)日：1998-06-02
申请号：US806396
申请日：1997-02-26
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/08 , H01L29/205 , H01L29/73 , H01L29/737 , H01L29/00 , H01L31/0328
CPC分类号： H01L29/0817 , H01L27/0658 , H01L29/7304 , H01L29/7371
摘要： A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor. The base ballasting resistor has a high resistance relative to an emitter ballasting reactor so that it can be easily mass produced with good uniformity and yield.
摘要翻译： 双极晶体管电路元件包括半导体衬底; 依次设置在基板上，基底层，发射极层和集电极层; 由集电极，基极和发射极层的部分形成的双极性晶体管，并且包括电连接到基极层的基极和用于与基极层进行外部连接的基极焊盘; 由与所述双极型晶体管隔离的所述基极层的一部分形成的基极保护电阻器，并且将所述基极电极与所述基极电极焊盘电连接; 以及与所述基极镇流电阻并联连接的基极并联电容器，其中所述基极并联电容器包括所述基极输入焊盘的一部分，设置在所述基极电极焊盘的一部分上的电介质膜，以及设置在与所述基极相对的所述电介质层上的第二电极 电极焊盘并电连接到双极晶体管的发射极。 碱性镇流电阻器相对于发射极压载反应器具有高电阻，使得其可以容易地以均匀性和产率良好地批量生产。
-
公开(公告)号：US5357121A
公开(公告)日：1994-10-18
申请号：US944981
申请日：1992-09-15
IPC分类号： G02B6/13 , H01L27/06 , H01L27/14 , H01L27/144 , H01L31/10 , H01L29/161 , H01L29/205 , H01L29/225 , H01L33/00
CPC分类号： H01L27/1443 , H01L27/0694
摘要： An optoelectronic integrated circuit includes a light responsive element for converting an optical signal into an electrical signal and an electronic circuit for processing the electrical signal. The light responsive element is disposed on a first surface of a substrate and includes p side electrodes and n side electrodes alternatingly arranged parallel to each other. The electronic circuit is disposed on a second surface of the substrate. The light responsive element is electrically connected to the electronic circuit by a via hole penetrating the substrate. In this structure, light incident on the first surface is almost completely absorbed by the substrate and hardly reaches the electronic circuit on the second surface. Therefore, variations in operation of the electronic circuit, such as an increase in drain current, are reduced. In addition, since the degree of freedom in arranging these elements on both surfaces of the substrate is increased, high-density integration is achieved, resulting in a small-sized IC chip.
摘要翻译： 光电集成电路包括用于将光信号转换成电信号的光响应元件和用于处理电信号的电子电路。 光响应元件设置在基板的第一表面上，并且包括彼此平行地交替布置的p侧电极和n侧电极。 电子电路设置在基板的第二表面上。 光响应元件通过穿透基板的通孔电连接到电子电路。 在该结构中，入射到第一表面的光几乎完全被基板吸收，并且几乎不到达第二表面上的电子电路。 因此，减小了电子电路的工作变化，例如漏极电流的增加。 此外，由于在衬底的两个表面上布置这些元件的自由度增加，所以实现了高密度的集成，导致了小尺寸的IC芯片。
-
15.发明授权
公开(公告)号：US5163169A
公开(公告)日：1992-11-10
申请号：US455134
申请日：1989-12-22
申请人： Kousei Maemura , Teruyuki Shimura , Hiroaki Seki
发明人： Kousei Maemura , Teruyuki Shimura , Hiroaki Seki
CPC分类号： H03B19/14 , H03B2200/0022 , H03B2200/0028 , H03B2200/009 , H03B2202/01 , H03B2202/042 , H03B2202/06
摘要： A frequency divider circuit including a field effect transistor on a semi-insulating substrate including applying a voltage higher than the lowest of the power supply voltages of the frequency divider circuit to the semi-insulating substrate.
-
16.发明申请公开(公告)号：US20140232467A1
公开(公告)日：2014-08-21
申请号：US14237776
申请日：2012-08-24
申请人： Kenji Mukai , Kenichi Horiguchi , Morishige Hieda , Katsuya Kato , Yoshihito Hirano , Kazuya Yamamoto , Hiroyuki Joba , Teruyuki Shimura
发明人： Kenji Mukai , Kenichi Horiguchi , Morishige Hieda , Katsuya Kato , Yoshihito Hirano , Kazuya Yamamoto , Hiroyuki Joba , Teruyuki Shimura
IPC分类号： H03F3/195
CPC分类号： H03F3/195 , H03F1/0277 , H03F3/211 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/255 , H03F2200/423 , H03F2200/451 , H03F2203/7206 , H03F2203/7209
摘要： A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1, and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7. The driver-stage amplifier 3 is fabricated on a silicon substrate 11, while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.
摘要翻译： 高频放大器模块包括：放大从RF输入端子1输入的RF信号的驱动级放大器3和放大由驱动级放大器3放大的信号的末级放大器5，并输出信号 在放大到RF输出端子7之后。驱动级放大器3制造在硅衬底11上，而最后级放大器5制造在砷化镓衬底上。 这种结构使成本降低，同时保持与在砷化镓基板71上制造整个模块的所有部件的情况相当的高频特性。
-
公开(公告)号：US07907009B2
公开(公告)日：2011-03-15
申请号：US12514159
申请日：2006-11-30
IPC分类号： H03F3/68
CPC分类号： H03F1/0277 , H03F1/565 , H03F3/191 , H03F3/211 , H03F3/72 , H03F2200/318 , H03F2200/366 , H03F2200/387 , H03F2200/451 , H03F2200/456 , H03F2203/7233 , H03F2203/7236 , H03H7/38
摘要： Provided is a high frequency amplifier including two amplifying elements of different element sizes connected in parallel and switching the amplifying elements in accordance with a level of output power. In particular, the high frequency amplifier includes an output matching circuit for matching to characteristic impedance (50 ohms) both when the output power is high and low, and increasing impedance when the turned-off amplifying element is viewed from a connection node on an output side of the two amplifying elements. Consequently, characteristics such as high output power and high efficiency can be achieved and it is possible to prevent an amplified high frequency signal from passing around to a matching circuit on a turned-off amplifying element side.
摘要翻译： 提供了包括并联连接的不同元件尺寸的两个放大元件的高频放大器，并且根据输出功率的电平来切换放大元件。 特别地，高频放大器包括输出匹配电路，用于在输出功率高和低时匹配特性阻抗（50欧姆），并且当输出端上的连接节点观察关断放大元件时增加阻抗 一侧的两个放大元件。 因此，可以实现诸如高输出功率和高效率的特性，并且可以防止放大的高频信号在关闭放大元件侧通过到匹配电路。
-
公开(公告)号：US07605648B2
公开(公告)日：2009-10-20
申请号：US11947831
申请日：2007-11-30
IPC分类号： H03F1/14
CPC分类号： H03F1/0277 , H03F1/0261 , H03F1/30 , H03F3/195 , H03F2200/411 , H03F2200/451
摘要： A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.
摘要翻译： 根据本发明的功率放大器通过切换主功率放大器和辅助功率放大器来操作。 辅助功率放大器的空闲电流小于主功率放大器的空闲电流。 每个主功率放大器和辅助功率放大器具有用于放大RF信号的前置放大元件，用于放大来自前一放大元件的输出信号的后一放大元件，用于驱动前一放大元件的前一偏置电路，以及后一偏置 电路分别用于驱动后面的放大元件。 主功率放大器的后一放大元件与辅助功率放大器的后一放大元件之间的间隔不大于100um。 主功率放大器的后一个放大元件与辅助功率放大器的后一个偏置电路之间的间隔不小于200μm。
-
公开(公告)号：US06271098B1
公开(公告)日：2001-08-07
申请号：US09552694
申请日：2000-04-19
IPC分类号： H01L21331
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/7371
摘要： A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor &bgr; from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed between the ballast resistor layer and the n-AlGaAs layer.
摘要翻译： 异质结双极晶体管在发射极层中设置有镇流电阻层，防止电流放大因子β降低。具有特定载流子浓度的n-GaAs载流子供应层形成在镇流电阻层和n-AlGaAs层之间 。
-
公开(公告)号：US5726468A
公开(公告)日：1998-03-10
申请号：US614688
申请日：1996-03-13
IPC分类号： H01L29/41 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/331 , H01L23/52 , H01L29/205 , H01L29/423 , H01L29/43 , H01L29/73 , H01L29/732 , H01L29/737 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7371 , H01L29/42304
摘要： A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.
摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体衬底上的第一有源层; 设置在所述第一有源层上的第二有源层; 第一电极，其包括设置在第二有源层上的下层和设置在下层上的上层，具有从下层突出的突出部; 绝缘膜，连续地覆盖第二有源层的表面，第一电极的下层的侧表面，以及上层的突出部的下表面和侧表面; 以及第二电极，其设置在所述第二有源层的与所述第二有源层自对准的所述第二有源层的相对侧的所述表面上。 第二电极和第二有源层之间的距离被最小化，并且第二电极的厚度可以是约7000，使第一有源层的电阻最小化并提高高频特性。 可以可靠地实现第一和第二有源层之间的电气分离。 第二活性层的表面的重组被抑制。
-
-
-
-
-
-
-
-
-
搜索结果
33 条记录 (耗时 0.021 秒)
