公开(公告)号：US20100117167A1

公开(公告)日：2010-05-13

申请号：US12588421

申请日：2009-10-15

Applicant: Hisanori Yokura ,  Tetsuo Fujii

Inventor： Hisanori Yokura ,  Tetsuo Fujii

IPC: H01L29/84 ,  H01L21/02

CPC classification number: G01P15/125 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0831

Abstract: A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

Abstract translation: 半导体动态量传感器包括与传感器部连接的传感器部和盖。 基于在传感器部件的可动电极和固定电极之间限定的电容器的电容来检测动态量。 传感器部分的浮动部分与传感器部件的支撑板分离以限定预定间隔。 盖和支撑板中的至少一个具有移位部分，以使浮子部分沿垂直于支撑板的方向移动，从而改变预定间隔。 可移动电极具有根据移位的浮子部分的位移。

公开(公告)号：US20100050767A1

公开(公告)日：2010-03-04

申请号：US12585052

申请日：2009-09-01

Applicant: Hirofumi Higuchi ,  Tetsuo Fujii ,  Masaki Inoue

Inventor： Hirofumi Higuchi ,  Tetsuo Fujii ,  Masaki Inoue

IPC: G01C19/56

CPC classification number: G01C19/5719

Abstract: An angular velocity sensor includes first and second oscillators and a coupling beam. The coupling beam couples the first and second oscillators together in such a manner that the first and second oscillators vibrate relative to each other in a predetermined direction. The coupling beam includes a first post portion joined to a surface of the first oscillator, a second post portion joined to a surface of the second oscillator, and a spring portion that joins the first post portion to the second post portion. The spring portion is spaced from the first and second oscillators and has elasticity in the predetermined direction.

Abstract translation: 角速度传感器包括第一和第二振荡器和耦合梁。 耦合光束以第一和第二振荡器在预定方向上相对于彼此振动的方式将第一和第二振荡器耦合在一起。 耦合梁包括接合到第一振荡器的表面的第一柱部分，与第二振荡器的表面接合的第二柱部分，以及将第一柱部分连接到第二柱部分的弹簧部分。 弹簧部分与第一和第二振荡器间隔开，并且在预定方向上具有弹性。

公开(公告)号：US20090261430A1

公开(公告)日：2009-10-22

申请号：US12385848

申请日：2009-04-21

Applicant: Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

Inventor： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

Abstract translation: 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

公开(公告)号：US20090114985A1

公开(公告)日：2009-05-07

申请号：US12289772

申请日：2008-11-04

Applicant: Nozomu Akagi ,  Hitoshi Yamaguchi ,  Tetsuo Fujii

Inventor： Nozomu Akagi ,  Hitoshi Yamaguchi ,  Tetsuo Fujii

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L22/14 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766

Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.

Abstract translation: 公开了一种半导体装置。 该半导体装置包括具有彼此相对的第一表面和第二表面的半导体衬底。 半导体装置还包括多个双面电极元件，每个双面电极元件分别具有位于半导体衬底的第一和第二表面上的一对电极。 A电流在第一和第二电极之间流动。 每个双面电极元件具有位于半导体衬底中的PN列区域。 半导体装置还包括围绕多个双面电极元件中的每一个的绝缘沟槽，并且使多个双面电极元件彼此绝缘和分离。

公开(公告)号：US20090014820A1

公开(公告)日：2009-01-15

申请号：US12215884

申请日：2008-06-30

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: H01L29/00

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

公开(公告)号：USRE40561E1

公开(公告)日：2008-11-04

申请号：US10315861

申请日：2002-12-10

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

Abstract: A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

Abstract translation: 单晶硅衬底（1）通过SiO 2膜（9）结合到单晶硅衬底（8），并且将单晶硅衬底（1）制成薄膜 。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和单晶硅衬底（1）的与悬臂（13）相对的部分分别涂覆有SiO 2膜（5 ），从而在容量型传感器中防止电极短路。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

公开(公告)号：US20080099862A1

公开(公告)日：2008-05-01

申请号：US11902985

申请日：2007-09-27

Applicant: Tetsuo Fujii ,  Hiroaki Himi

Inventor： Tetsuo Fujii ,  Hiroaki Himi

IPC: H01L29/84 ,  H01L21/50

CPC classification number: B81C1/00269 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a physical quantity sensor includes: forming a sensor element in a first wafer; stacking a support substrate, a connection layer and a cap layer in this order so that a second wafer is prepared; bonding the cap layer of the second wafer to the first wafer in such a manner that the sensor element is disposed in a space between the first wafer and the second wafer; removing the support substrate and the connection layer from the second wafer; and dividing the first wafer together with the cap layer into a plurality of chips so that a plurality of physical quantity sensors is formed.

Abstract translation: 一种用于制造物理量传感器的方法包括：在第一晶片中形成传感器元件; 以此顺序堆叠支撑基板，连接层和盖层，从而准备第二晶片; 将第二晶片的盖层以使得传感器元件设置在第一晶片和第二晶片之间的空间中的方式结合到第一晶片; 从所述第二晶片去除所述支撑基板和所述连接层; 并且将第一晶片与盖层一起划分成多个芯片，从而形成多个物理量传感器。

公开(公告)号：US20080030205A1

公开(公告)日：2008-02-07

申请号：US11808774

申请日：2007-06-12

Applicant: Tetsuo Fujii ,  Eishi Kawasaki

Inventor： Tetsuo Fujii ,  Eishi Kawasaki

IPC: G01R27/26 ,  G01L9/12

CPC classification number: G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

Abstract translation: 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 由于第一物理量检测元件被密封在容纳空间中，所以第一物理量检测元件被第一基板和第二基板保护。

公开(公告)号：US20070290682A1

公开(公告)日：2007-12-20

申请号：US11649280

申请日：2007-01-04

Applicant: Satoshi Oohira ,  Tetsuo Fujii

Inventor： Satoshi Oohira ,  Tetsuo Fujii

IPC: G01R33/06

CPC classification number: G01R33/07 ,  G01R33/075 ,  G01R33/077 ,  H01L43/065

Abstract: A magnetic sensor includes: a substrate; a semiconductor region; a magnetic field detection portion; a pair of first electrodes; and two pairs of second electrodes. One pair of second electrodes includes first and second terminals, and the other pair includes third and fourth terminals. The first and third terminals are disposed on one side, and the second and fourth terminals are disposed on the other side. The first and fourth terminals are electrically coupled, and the second and third terminals are electrically coupled. The magnetic field detection portion and the first and second electrodes provide a vertical Hall element. One of the first and second electrodes supplies a driving current, and the other one detects the Hall voltage.

Abstract translation: 磁传感器包括：基板; 半导体区域 磁场检测部; 一对第一电极; 和两对第二电极。 一对第二电极包括第一和第二端子，另一对第二电极包括第三和第四端子。 第一和第三端子设置在一侧，第二和第四端子设置在另一侧。 第一和第四端子电耦合，并且第二和第三端子电耦合。 磁场检测部分和第一和第二电极提供垂直霍尔元件。 第一和第二电极之一提供驱动电流，另一个检测霍尔电压。

公开(公告)号：US07298022B2

公开(公告)日：2007-11-20

申请号：US11075881

申请日：2005-03-10

Applicant: Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

Inventor： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC: H01L23/544

CPC classification number: H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract translation: 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，因此不会产生保护片的废料，从而防止对芯片的污染。