公开(公告)号：US20170317273A1

公开(公告)日：2017-11-02

申请号：US15652816

申请日：2017-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toru KITADA ,  Kanto NAKAMURA ,  Atsushi GOMI ,  Shinji FURUKAWA ,  Yusuke SUZUKI

IPC: H01L43/12 ,  H01L43/08 ,  H01F41/18 ,  H01F10/32 ,  C23C14/08 ,  H01F10/16 ,  C23C14/58 ,  C23C14/34 ,  H01L43/10

CPC classification number: H01L43/12 ,  C23C14/082 ,  C23C14/165 ,  C23C14/34 ,  C23C14/568 ,  C23C14/5853 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/18 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

Abstract: A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

公开(公告)号：US20160251746A1

公开(公告)日：2016-09-01

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Hiroshi SONE ,  Atsushi GOMI ,  Kanto NAKAMURA ,  Toru KITADA ,  Yasunobu SUZUKI ,  Yusuke SUZUKI ,  Koichi TAKATSUKI ,  Tatsuo HIRASAWA ,  Keisuke SATO ,  Chiaki YASUMURO ,  Atsushi SHIMADA

IPC: C23C14/00 ,  H01L43/08 ,  H01J37/32 ,  C23C14/16 ,  H01J37/34 ,  H01L43/12 ,  H01L43/10

CPC classification number: C23C14/0036 ,  C23C14/0063 ,  C23C14/081 ,  C23C14/165 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01J37/3426 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract translation: 根据一个实施例的沉积装置包括处理容器。 安装台安装在加工容器的内部，金属靶被安装在安装台的上方。 此外，头部构造成朝向安装台注入氧化气体。 该头部构造成在限定在金属靶和安装在安装台上的目标物体的安装区域之间的第一区域和与限定在金属靶和安装区域之间的空间间隔开的第二区域之间移动。

公开(公告)号：US20160071707A1

公开(公告)日：2016-03-10

申请号：US14842821

申请日：2015-09-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji FURUKAWA ,  Hiroyuki TOSHIMA ,  Tooru KITADA ,  Kanto NAKAMURA ,  Kazunaga ONO

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3488 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32733

Abstract: A processing apparatus includes a processing chamber, a rotatable mounting table, a cooling mechanism and a driving mechanism. A sputtering target is provided in the processing chamber. The rotatable mounting table is provided in the processing chamber and configured to mount thereon an object to be processed. The cooling mechanism is configured to cool the mounting table. The driving mechanism is configured to change a relative position of the mounting table with respect to the cooling mechanism. The driving mechanism changes a conductivity of heat from the mounting table to the cooling mechanism at least by switching a first state in which the mounting table and the cooling mechanism are separated from each other and a second state in which the mounting table and the cooling mechanism become close to each other.

Abstract translation: 处理装置包括处理室，可旋转安装台，冷却机构和驱动机构。 在处理室中设置溅射靶。 可旋转安装台设置在处理室中并且构造成在其上安装待处理物体。 冷却机构被配置为冷却安装台。 驱动机构被配置为改变安装台相对于冷却机构的相对位置。 至少通过将安装台和冷却机构分离的第一状态切换到安装台和冷却机构的第二状态，驱动机构将热量从安装台改变为冷却机构 互相靠近。