公开(公告)号：US09108231B2

公开(公告)日：2015-08-18

申请号：US14466240

申请日：2014-08-22

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Terufumi Wakiyama

IPC: B08B3/10 ,  B08B3/04 ,  B08B3/02 ,  H01L21/67

CPC classification number: B08B3/10 ,  B08B3/02 ,  B08B3/022 ,  B08B3/024 ,  B08B3/04 ,  B08B3/041 ,  B08B3/048 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6715 ,  Y10S134/902

Abstract: Disclosed is a liquid processing apparatus including first and second cups installed so as to surround a rotation holding unit of a substrate and guide a processing liquid scattered from the rotating substrate downwards. A first driving unit and a second driving unit elevate the first cup and the second cup between a position receiving the processing liquid and the lower position thereof. A controller controls that the first cup and the second cup are ascended at the same time by transferring the driving force of the first driving unit while the first cup or a first elevating member thereof is overlapped with the second cup or a second elevating member thereof from the lower side by setting the ascending speed of the first cup to be higher than the ascending speed of the second cup when the first and second cups are ascended at the same time.

Abstract translation: 公开了一种液体处理装置，包括安装成围绕基板的旋转保持单元安装的第一和第二杯，并将从旋转底板散射的处理液向下引导。 第一驱动单元和第二驱动单元使第一杯和第二杯在接收处理液的位置和其下部位置之间升高。 控制器通过转移第一驱动单元的驱动力同时将第一杯和第二杯同时上升，同时第一杯或第一升降构件与第二杯或其第二升降构件重叠， 当第一杯和第二杯同时上升时，将第一杯的上升速度设定为高于第二杯的上升速度的下侧。

公开(公告)号：US09108228B2

公开(公告)日：2015-08-18

申请号：US13779969

申请日：2013-02-28

Applicant: Tokyo Electron Limited

Inventor： Takahisa Otsuka ,  Hirotaka Maruyama ,  Nobuhiro Ogata ,  Kazuyuki Kudo

IPC: H01L21/00 ,  B08B3/04 ,  H01L21/67

CPC classification number: B08B3/04 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: Provided is a liquid processing apparatus that selectively supplies processing liquids with a switching operation to the surface of a substrate to perform a liquid processing. The liquid processing apparatus includes a first processing liquid supply unit including a first nozzle block that selectively supplies an acidic chemical liquid and a rinse liquid, and a second processing liquid supply unit including a second nozzle block that selectively supplies an alkaline chemical liquid and a rinse liquid. When a chemical liquid is supplied to the substrate from one of the first and second nozzle blocks, the other of the first and second nozzle blocks is retreated to a retreat position. When the rinse liquid is supplied to the substrate from one of the first and second nozzle blocks, the other of the first and second nozzle blocks is moved to a processing position.

Abstract translation: 提供了一种液体处理装置，其选择性地向处理液体表面提供切换操作以进行液体处理。 液体处理装置包括第一处理液体供给单元，其包括选择性地供给酸性化学液体和冲洗液体的第一喷嘴块，以及第二处理液体供给单元，其包括选择性地供给碱性化学液体和冲洗液的第二喷嘴块 液体。 当从第一和第二喷嘴块中的一个向基板提供化学液体时，第一和第二喷嘴块中的另一个被退回到退避位置。 当冲洗液体从第一和第二喷嘴块之一提供给基板时，第一和第二喷嘴块中的另一个被移动到处理位置。

公开(公告)号：US20140137893A1

公开(公告)日：2014-05-22

申请号：US14083673

申请日：2013-11-19

Applicant: Tokyo Electron Limited

Inventor： Takahisa Otsuka ,  Nobuhiro Ogata ,  Hiroshi Marumoto ,  Terufumi Wakiyama

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67051

Abstract: In example embodiments, a supply flow rate of a clean gas can be reduced without decreasing process performance. A flow rate of a clean gas 78, having a low humidity, supplied from a clean gas supply device 70 or 78 when a drying process is performed on a substrate is set to be smaller than a flow rate of a clean gas 70 supplied from the clean gas supply device 70 or 78 into an internal space within a housing 60 when a liquid process is performed onto the substrate W, and a flow rate of a gas exhausted through the housing exhaust path when the drying process is performed is set to be smaller than a flow rate of a gas exhausted through the housing exhaust path 64 when the liquid process is performed.

Abstract translation: 在示例性实施例中，可以减少清洁气体的供应流量而不降低工艺性能。 当在基板上进行干燥处理时，从清洁气体供给装置70或78供给的具有低湿度的清洁气体78的流量被设定为小于从该基板供给的清洁气体70的流量 清洁气体供给装置70或78进入到壳体60内的内部空间中，当对基板W进行液体处理时，将进行干燥处理时通过壳体排出路径排出的气体的流量设定得较小 比当进行液体处理时通过壳体排气路径64排出的气体的流量高。

公开(公告)号：US11712710B2

公开(公告)日：2023-08-01

申请号：US16528757

申请日：2019-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Fumihiro Kamimura ,  Takahisa Otsuka ,  Hiroshi Komiya ,  Nobuhiro Ogata

IPC: H01L21/67 ,  B05B14/30 ,  B05B1/30

CPC classification number: B05B14/30 ,  B05B1/3093 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67017 ,  H01L21/67023 ,  H01L21/67051

Abstract: A substrate processing apparatus includes: a processing chamber in which a substrate is processed with a processing liquid; a nozzle having a discharge port from which the processing liquid is discharged, the discharge port being formed in a distal end portion of the nozzle; a nozzle bath including an accommodation chamber formed therein, wherein the distal end portion of the nozzle is accommodated in the accommodation chamber at a standby time at which the processing liquid is not supplied to the substrate; a circulation line configured to return the processing liquid, which is discharged from the nozzle to the nozzle bath, to the nozzle; and a first restraint part configured to restrain a gas from flowing between an outside of the nozzle bath and the processing liquid present inside the nozzle bath when the processing liquid discharged from the nozzle to the nozzle bath is circulated to the nozzle.

公开(公告)号：US20180090306A1

公开(公告)日：2018-03-29

申请号：US15715227

申请日：2017-09-26

Applicant: Tokyo Electron Limited

Inventor： Jiro Higashijima ,  Nobuhiro Ogata ,  Yusuke Hashimoto

IPC: H01L21/02 ,  B05B15/12 ,  B05B12/10 ,  H01L21/67 ,  G03F7/42

CPC classification number: H01L21/0206 ,  B05B12/10 ,  B05B14/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67248

Abstract: A substrate processing apparatus includes a processing liquid supply mechanism 70 configured to supply a SPM liquid to a substrate; a temperature adjusting unit (heater) 303 configured to adjust a temperature of the SPM liquid at a time when the SPM liquid is supplied to the substrate from the processing liquid supply mechanism 70; an acquisition unit (temperature sensor) 80 configured to acquire temperature information of the SPM liquid on a surface of the substrate; and a control unit 18 configured to set an adjustment amount of the temperature adjusting unit (heater) 303 based on the temperature information of the SPM liquid acquired by the acquisition unit (temperature sensor) 80. The temperature adjusting unit (heater) 303 adjusts, based on the adjustment amount set by the control unit 18, the temperature of the SPM liquid at the time when the SPM liquid is supplied to the substrate.

公开(公告)号：US20170361364A1

公开(公告)日：2017-12-21

申请号：US15624822

申请日：2017-06-16

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Norihiro Ito ,  Jiro Higashijima ,  Yusuke Hashimoto ,  Kazuhiro Aiura

IPC: B08B13/00 ,  B08B3/04 ,  B08B3/08 ,  H01L21/67

CPC classification number: B08B13/00 ,  B08B3/041 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67173

Abstract: According to the present disclosure, both first and second cup bodies are brought into a state of being close to each other by lifting one of the first and second cup bodies. A first gap between a gap forming portion formed on the lower surface of a first protruding portion and the upper surface of a second protruding portion is narrower than a second gap between a portion of the first protruding portion where the gap forming portion is absent, and the upper surface of the second protruding portion. In this state, a cleaning liquid is supplied to the second gap. Since movement of the cleaning liquid that tends to flow radially outward is restricted by the first narrow gap, the entire area between the first and second protruding portions may be filled with the cleaning liquid so that the surface to be cleaned may be evenly cleaned.

公开(公告)号：US09721813B2

公开(公告)日：2017-08-01

申请号：US13937306

申请日：2013-07-09

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Hiromi Kiyose ,  Hidetsugu Yano ,  Tsukasa Hirayama

IPC: H01L21/00 ,  B08B13/00 ,  B08B3/04 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  B08B3/04 ,  B08B13/00 ,  H01L21/68735

Abstract: The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.

公开(公告)号：US20140026927A1

公开(公告)日：2014-01-30

申请号：US13941770

申请日：2013-07-15

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Terufumi Wakiyama ,  Yoshihiro Kai ,  Ryouga Kamo ,  Yoshinori Ikeda

IPC: B08B3/04

CPC classification number: B08B3/04 ,  H01L21/67051

Abstract: Disclosed are a liquid processing apparatus and a cleaning method which may perform cleaning on a portion which is not in the vicinity of a drain section in an exhaust route. The liquid processing apparatus includes an exhaust section provided in vicinity of the drain section, which is configured to exhaust a surrounding atmosphere of the substrate held by the substrate holding unit; an exhaust route forming member configured to form an exhaust route reaching the exhaust section; and a first cleaning unit configured to supply a cleaning liquid to the exhaust route forming member at the exhaust route side.

Abstract translation: 公开了一种液体处理设备和清洁方法，其可以对排气路径中不在排水区附近的部分进行清洁。 液体处理装置包括设置在排出部附近的排气部，该排气部构造为排出由基板保持单元保持的基板的周围的气氛; 排气路径形成部件，其构成为形成到达排气部的排气路径; 以及构造成在排气路径侧向排气路径形成部件供给清洗液的第一清洗部。

公开(公告)号：US20140014134A1

公开(公告)日：2014-01-16

申请号：US13937306

申请日：2013-07-09

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Hiromi Kiyose ,  Hidetsugu Yano ,  Tsukasa Hirayama

IPC: B08B3/04 ,  B08B13/00

CPC classification number: H01L21/67051 ,  B08B3/04 ,  B08B13/00 ,  H01L21/68735

Abstract: The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.

Abstract translation: 本公开提供一种清洁方法，其能够使杯和杯周围的构件被彻底清洁。 在这种清洁方法中，从旋转由基板保持单元保持的清洁夹具旋转的同时，将清洗液从清洁夹具的上侧供给到清洁夹具。 提供给清洁夹具的清洗液体沿着清洁夹具的整个周边设置在清洁夹具的外周边缘附近的倾斜部分的倾斜表面上倾斜向上散布，从而清洁杯子。

公开(公告)号：US12051605B2

公开(公告)日：2024-07-30

申请号：US17495833

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Hiroki Sakurai ,  Daisuke Goto ,  Takahiro Koga ,  Kanta Mori ,  Yusuke Hashimoto

IPC: H01L21/67 ,  B05B1/14

CPC classification number: H01L21/6715 ,  B05B1/14 ,  H01L21/67051

Abstract: A substrate processing apparatus includes a fluid supply unit that supplies a fluid that includes a pressurized vapor or mist of a purified water, a processing liquid supply unit that supplies a processing liquid that includes at least sulfuric acid, and a nozzle that includes a first discharge port that discharges a fluid that is supplied from the fluid supply unit, a second discharge port that discharges a processing liquid that is supplied from the processing liquid supply unit, and a guiding route that is communicated with the first discharge port and the second discharge port and guides a mixed fluid of a fluid that is discharged from the first discharge port and a processing liquid that is discharged from the second discharge port, where a cross-sectional area of the guiding route is greater than a cross-sectional area of the first discharge port.