公开(公告)号：USRE41551E1

公开(公告)日：2010-08-24

申请号：US11187036

申请日：2005-07-20

申请人： Tomohiro Kawase ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Masami Tatsumi

IPC分类号： C30B11/04

CPC分类号： C30B11/10 ,  C30B27/00 ,  C30B29/40 ,  C30B29/42

摘要： A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

摘要翻译： 提供了一种以高再现性制备具有良好的电特性并除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。 该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 密封填充坩埚气体不渗透材料; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。

公开(公告)号：US06866714B2

公开(公告)日：2005-03-15

申请号：US10430027

申请日：2003-05-05

申请人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B29/42 ,  C30B35/00

CPC分类号： C30B15/00 ,  C30B11/00 ,  C30B29/42 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

摘要： A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104 cm−2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive boron concentration of not more than 1×1016 cm−3 and a carbon concentration of 0.5×1015 cm−3 to 1.5×1015 cm−3 with a uniform concentration throughout the crystal. Such a crystal can form a very thin wafer with a low dislocation density. A special method and apparatus for producing such a crystal is also disclosed.

摘要翻译： 大半导体晶体具有至少6英寸的直径和不大于1×10 -4 cm -2的低位错密度。 该晶体优选为GaAs的单晶，或CdTe，InAs，GaSb，Si或Ge中的一种，并且可以具有不大于1×10 16 cm -3的正硼浓度和0.5×10 6的碳浓度 <15> cm -3至1.5×10 15 cm -3，在整个晶体中具有均匀的浓度。 这种晶体可以形成具有低位错密度的非常薄的晶片。 还公开了一种用于制造这种晶体的特殊方法和装置。

公开(公告)号：US4678534A

公开(公告)日：1987-07-07

申请号：US733361

申请日：1985-05-13

申请人： Koji Tada ,  Masami Tatsumi ,  Toshihiro Kotani ,  Shinichi Sawada

发明人： Koji Tada ,  Masami Tatsumi ,  Toshihiro Kotani ,  Shinichi Sawada

IPC分类号： C30B15/10 ,  C30B27/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B15/10 ,  C30B27/02 ,  C30B29/40 ,  Y10S117/907 ,  Y10T117/106

摘要： A modified liquid encapsulated Czockralski method for growing a single crystal of compound semiconductor is disclosed. This method uses two vessels. An inner vessel is filled with an inactive gas, a gas of an element of group V and optionally an impurity gas. The inner vessel encloses a crucible containing compound semiconductor material, an encapsulant material, and optionally an impurity element. An outer vessel is filled only with the inactive gas. The total pressure of the inner atmosphere is equal to or higher than that of the outer atmosphere. The partial pressure of the gas of the element of group V is larger than the dissociation pressure of the element of group V near the melting point of the compound semiconductor.

摘要翻译： 公开了用于生长化合物半导体的单晶的改进的液体封装的Czockralski方法。 这种方法使用两个血管。 内部容器填充有惰性气体，第V族元素的气体和任选的杂质气体。 内部容器包含含有化合物半导体材料的坩埚，密封剂材料和任选的杂质元素。 外部容器仅用惰性气体填充。 内部气氛的总压力等于或高于外部气氛的总压力。 V族元素的气体分压大于化合物半导体熔点附近的V族元素的离解压力。

公开(公告)号：US5145550A

公开(公告)日：1992-09-08

申请号：US038447

申请日：1987-04-14

申请人： Koji Tada ,  Masami Tatsumi

发明人： Koji Tada ,  Masami Tatsumi

IPC分类号： C30B29/40 ,  C30B15/04 ,  C30B27/02

CPC分类号： C30B27/02 ,  C30B29/40

摘要： A process for growing single crystals of the III-V compound semiconductor is provided, which is the vapor pressure control method using a vertical puller and which is characterized by dividing the surface area of the melt into two sections, covering one section with a liquid encapsulant while remaining the other section in contact with the atmosphere of the vessel (furnace), and this process may be preferably carried out by using an apparatus which comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of melt contained in the crucible, and as a result single crystal of III-V compound semiconductor having various excellent properties such as low impurity content (high purity), low dislocation density, and the like may be obtained.

摘要翻译： 提供了用于生长III-V族化合物半导体的单晶的方法，其是使用垂直拉拔器的蒸气压控制方法，其特征在于将熔体的表面积分成两部分，用液体密封剂覆盖一个部分 同时保留与容器（炉）的气氛接触的另一部分，并且该方法可以优选地通过使用包括可密封容器，上轴，下轴，多个加热器，坩埚的装置 以及用于分割坩埚中所含的熔体表面的方法，结果可以获得具有各种优异性能如高杂质含量（高纯度），低位错密度等的III-V族化合物半导体的单晶 。

公开(公告)号：US20050042743A1

公开(公告)日：2005-02-24

申请号：US10500975

申请日：2003-07-10

申请人： Chihiro Kawai ,  Masami Tatsumi

发明人： Chihiro Kawai ,  Masami Tatsumi

IPC分类号： A61L9/16 ,  A61L9/20 ,  B01J35/00 ,  C02F1/32 ,  C02F1/72 ,  C09K11/02 ,  C09K11/08 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/67 ,  C09K11/77 ,  H01L33/16 ,  H01L33/18 ,  H01L35/24 ,  C12M1/34

CPC分类号： H01L33/16 ,  A61L9/16 ,  A61L9/205 ,  B01J35/004 ,  C02F1/001 ,  C02F1/32 ,  C02F1/725 ,  C02F2101/30 ,  C02F2303/04 ,  C09K11/02 ,  C09K11/0883 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/672 ,  C09K11/77 ,  C09K11/7704 ,  C09K11/7766 ,  C09K11/7783 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a filter with which organic matter, bacteria, viruses, and other harmful substances can be trapped, and the trapped material can be sterilized and decomposed, at low cost and extremely high efficiency. A porous ceramic or metal is used as a substrate, and a porous semiconductor composed of a semiconductor material having a light emitting function is formed in the interior or on the surface of this substrate. An electrode is provided to this product to serve as a filter, voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed. The porous semiconductor layer is preferably composed of columns grown perpendicular to the substrate plane, and has the function of emitting ultraviolet light with a wavelength of 400 nm or less. The pores in the porous substrate column are through-holes perpendicular to the substrate plane, and the average size of these pores is preferably from 0.1 to 100 μm. The distal ends of the columns preferably have a pointed shape. To manufacture, a suspension of semiconductor particles having a light emitting function is filtered through the porous substrate serving as a filter medium so as to form a deposited layer of semiconductor particles on the porous substrate surface. A deposited layer of p-type semiconductor particles and a deposited layer of n-type semiconductor particles may also be formed so that these form a pn junction. Further, the present invention is characterized in that an insulating layer is formed on the top and bottom surfaces of the porous semiconductor layer, and semiconductor particles are dispersed in the insulating layer, with the bandgap of the semiconductor particles in the porous light emitting layer or the porous semiconductor layer being at least 3.2 eV, and being doped with gadolinium, which is the light emitting center. In addition, the porous semiconductor layer may be made of porous silicon nitride composed of columnar Si3N4 particles with an average aspect ratio of at least 3 and an oxide-based binder phase containing at least one of rare earth element, and emit visible light or ultraviolet light.

公开(公告)号：US4634490A

公开(公告)日：1987-01-06

申请号：US679895

申请日：1984-12-10

申请人： Masami Tatsumi ,  Shin-ichi Sawada ,  Ryusuke Nakai

发明人： Masami Tatsumi ,  Shin-ichi Sawada ,  Ryusuke Nakai

IPC分类号： C30B15/26 ,  G01N23/207

CPC分类号： C30B15/26 ,  G01N23/207

摘要： Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.

摘要翻译： 生长期间的单晶由切割的X射线束照射，并且来自晶体的衍射X射线束以二维方式由图像放大器监测，使得衍射的X射线可被图像放大器监测，即使 发生晶体直径的变化。 生长期间单晶的一半部分被切割的X射线束照射，并且晶体的另一半部分在晶体的整个高度上被X射线束照射，使得晶体生长的Laue斑点 被显示在图像放大器的显示器的一半部分上，并且在图像放大器的显示器的另一半部分中监视被上拉的晶体的形状。

公开(公告)号：US4603096A

公开(公告)日：1986-07-29

申请号：US684732

申请日：1984-12-21

申请人： Koji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi

发明人： Koji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi

IPC分类号： G03H1/02 ,  G03H1/04

CPC分类号： G03H1/02 ,  G03H2001/026 ,  G03H2001/0268

摘要： A hologram recording material comprises one of bismuth silicon oxide and bismuth germanium oxide, and Fe added to these material. The density of Fe is 10 p.p.m.

摘要翻译： 全息记录材料包括氧化铋和氧化铋锗中的一种，并将Fe添加到这些材料中。 Fe的密度为10 p.p.m。

公开(公告)号：US06475277B1

公开(公告)日：2002-11-05

申请号：US09605845

申请日：2000-06-29

申请人： Ryu Hirota ,  Masami Tatsumi

发明人： Ryu Hirota ,  Masami Tatsumi

IPC分类号： C30B2510

CPC分类号： C30B25/105 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10

摘要： A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element and an inlet 7 for introducing nitrogen; excitation means 15 for plasma-exciting nitrogen introduced from the inlet 7; and heating means 13 for heating a seed crystal 10 disposed within the reaction ampoule 3 and the container 11; wherein, upon growing the group III-V nitride semiconductor on the seed crystal 10, nitrogen is introduced from the inlet 7, and no gas is let out from within the reaction ampoule 3.

摘要翻译： 用于生长III-V族氮化物半导体（GaN）的气相生长装置1包括其中设置有用于容纳III族元素的容器11和用于引入氮的入口7的反应安瓿3; 用于从入口7引入的等离子体激发氮的激发装置15; 以及加热装置13，用于加热设置在反应安瓿3和容器11内的晶种10; 其中，在籽晶10上生长III-V族氮化物半导体后，从入口7引入氮气，并且在反应安瓿3内没有气体被排出。

公开(公告)号：US5292487A

公开(公告)日：1994-03-08

申请号：US865040

申请日：1992-03-31

申请人： Masami Tatsumi ,  Shin-ichi Sawada

发明人： Masami Tatsumi ,  Shin-ichi Sawada

IPC分类号： C30B15/14 ,  B01D9/00

CPC分类号： C30B15/14 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1052 ,  Y10T117/1064 ,  Y10T117/1068

摘要： A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradient in the pulling direction. In this method, a coracle (6) having an opening is provided in a melt contained in a crucible (3). A first member (1) is positioned on the coracle (6) to intercept heat radiation from the melt. A second member (9) supported by a crystal pulling shaft (8) is positioned on the first member (1) to cover an opening formed at the center of the first member (1). Seeding is performed while heat loss is limited by intercepting the radiation with the first and the second members. After the seeding, a shoulder portion of a single crystal is formed while heat loss is still limited while intercepting the radiation with the members (1, 9). A cylindrical body of the single crystal is pulled by the shaft (8) which also lifts the members(1, 9).

摘要翻译： 使用辐射拦截构件（1,9）的切克劳斯基法使用具有低导热性或拉伸方向上的较小温度梯度的材料来制造具有高产率的单晶，例如化合物半导体。 在该方法中，在容纳在坩埚（3）中的熔融物中设置具有开口部的楔形物（6）。 第一构件（1）定位在楔子（6）上以拦截来自熔体的热辐射。 由晶体牵引轴（8）支撑的第二构件（9）定位在第一构件（1）上以覆盖形成在第一构件（1）的中心的开口。 在通过用第一和第二构件截取辐射来限制热损失的同时进行播种。 播种后，形成单晶的肩部，同时热损失仍然受到限制，同时用构件（1,9）拦截辐射。 单晶体的圆筒体被提升构件（1,9）的轴（8）拉动。

公开(公告)号：US4608535A

公开(公告)日：1986-08-26

申请号：US446395

申请日：1982-12-02

申请人： Kohji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi ,  Tsutomu Mitsui

发明人： Kohji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi ,  Tsutomu Mitsui

IPC分类号： G01R15/24 ,  G01R33/032 ,  G01R33/035 ,  G02F1/09 ,  G01R33/02 ,  G01R31/00 ,  G02B5/30

CPC分类号： G01R33/035 ,  G01R15/246 ,  G01R33/0322

摘要： A magnetic field and electric current measuring device which uses bismuth silicon oxide (Bi.sub.12 SiO.sub.20) or bismuth germanium oxide (Bi.sub.12 GeO.sub.20) as a Faraday cell, and which is so adapted that polarized light which enters the cell is passed back and forth through the cell along the optic axis thereof to cancel any change in optical rotatory power ascribable to a variation in temperature. A magnetic field applied in the direction of the optic axis of the Faraday cell is measured based on the angle of rotation of the polarization plane of the polarized light. The surface of the Faraday cell may be coated with a transparent and electrically conductive thin film to eliminate the effects of external electric fields.

摘要翻译： 使用铋氧化硅（Bi12SiO20）或氧化铋锗（Bi12GeO20）作为法拉第电池的磁场和电流测量装置，其适于使进入电池的偏振光沿着电池来回穿过电池 以防止归因于温度变化的光旋转功率的任何变化。 基于偏振光的偏振面的旋转角度来测量沿法拉第单元的光轴方向施加的磁场。 法拉第电池的表面可以涂覆有透明和导电的薄膜，以消除外部电场的影响。