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11.发明申请Plasma processing apparatus, plasma processing method and wave retardation plate 审中-公开等离子体处理装置，等离子体处理方法和波长延迟板公开(公告)号：US20060231208A1
公开(公告)日：2006-10-19
申请号：US11452402
申请日：2006-06-14
CPC分类号： H01J37/32211 , H01J37/32192
摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.
摘要翻译： 在使用径向线缝隙天线的微波等离子体处理装置中，槽板（16）由热膨胀率接近波形延迟板（18）的材料形成，或者在构成 波长延迟板（18）。 波长相对板与构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。
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公开(公告)号：US07083701B2
公开(公告)日：2006-08-01
申请号：US10296619
申请日：2002-03-28
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32211 , H01J37/32192
摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.
摘要翻译： 在使用径向线缝隙天线的微波等离子体处理装置中，槽板（16）由热膨胀率接近波形延迟板（18）的材料形成，或者在构成 波长延迟板（18）。 波长相对板与构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。
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公开(公告)号：US20060150914A1
公开(公告)日：2006-07-13
申请号：US10545355
申请日：2004-02-20
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32238
摘要： A plasma processing apparatus includes: a processing chamber; an inlet waveguide having an interior space in which a first standing wave of a microwave is formed by means of resonance; a dielectric within which a second standing wave of the microwave is formed by means of resonance; and a slot antenna having a slot through which the microwave is passed from the interior space to the dielectric. The slot is generally located at a point where the position of a loop in the first standing wave orthogonally projected to the slot antenna coincides with the position of a loop in the second standing wave orthogonally projected to the slot antenna. The present invention provides a plasma processing apparatus that improves the propagation efficiency of a microwave passed through an aperture of the slot antenna, thereby allowing microwave energy to be efficiently introduced into a processing chamber.
摘要翻译： 一种等离子体处理装置，包括：处理室; 具有通过谐振形成微波的第一驻波的内部空间的入口波导; 通过谐振形成微波的第二驻波的电介质; 以及具有狭槽的缝隙天线，微波从该槽从内部空间通过电介质。 槽通常位于正交投影到缝隙天线的第一驻波中的环的位置与正交投影到缝隙天线的第二驻波中的环的位置重合的点。 本发明提供一种等离子体处理装置，其提高通过缝隙天线的孔径的微波的传播效率，从而使微波能量被有效地引入处理室。
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公开(公告)号：US20050250338A1
公开(公告)日：2005-11-10
申请号：US10706423
申请日：2003-11-10
申请人： Tadahiro Ohmi , Takahisa Nitta , Masaki Hirayama , Haruyuki Takano , Ryu Kaiwara
发明人： Tadahiro Ohmi , Takahisa Nitta , Masaki Hirayama , Haruyuki Takano , Ryu Kaiwara
IPC分类号： C23C16/511 , H01J37/32 , H01L21/302 , H01L21/316
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/02115 , H01L21/0212 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02197 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31675 , H01L21/31691
摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.
摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。
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公开(公告)号：US06896490B2
公开(公告)日：2005-05-24
申请号：US10817938
申请日：2004-04-06
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
摘要： The present invention provides a vacuum apparatus that includes a plurality of vacuum containers each having a gas inlet and an exhaust outlet, a gas supply system for introducing a desired gas into each of the vacuum containers through the gas inlet, and an exhaust system for keeping each of the vacuum containers at a low pressure. In this vacuum apparatus, the exhaust system includes a plurality of multistage vacuum pumps connected in series. The exhaust outlet pressure of the last-stage vacuum pump is substantially at atmospheric pressure. The last-stage vacuum pump is designed to exhaust gas from a plurality of vacuum pumps at previous stages.
摘要翻译： 本发明提供一种真空装置，其包括多个真空容器，每个真空容器均具有气体入口和排气出口，用于通过气体入口将期望气体引入每个真空容器中的气体供给系统，以及用于保持 每个真空容器处于低压下。 在这种真空装置中，排气系统包括串联连接的多个多级真空泵。 最后一级真空泵的排气出口压力基本上处于大气压。 最后阶段的真空泵设计用于在以前的阶段从多个真空泵排出气体。
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公开(公告)号：US06719875B1
公开(公告)日：2004-04-13
申请号：US09365923
申请日：1999-08-03
申请人： Tadahiro Ohmi , Takahisa Nitta , Masaki Hirayama , Ryu Kaiwara , Kazuhide Ino
发明人： Tadahiro Ohmi , Takahisa Nitta , Masaki Hirayama , Ryu Kaiwara , Kazuhide Ino
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32697
摘要： The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.
摘要翻译： 等离子体处理装置能够均匀化由此产生的等离子体的密度和与其相关联的自偏压。 该装置包括两个平行板电极I和II，电极I和II中的一个被配置为承载待等离子体处理的衬底。 该装置还包括一个磁场施加装置，用于将一个水平和一个方向的磁场施加到基板的表面。 设备的附加元件是位于电极I的周边周围并具有施加到其上的高频功率的单个辅助电极。 电极的对准使得它们限定了用于处理衬底的等离子体被激发的空间。
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17.发明授权公开(公告)号：US06609564B2
公开(公告)日：2003-08-26
申请号：US10024928
申请日：2001-12-19
IPC分类号： G05D2300
CPC分类号： C02F1/70 , C02F5/00 , F28D2021/0019 , F28F19/00
摘要： A heat exchange cooling system for cooling an object of heat exchange such as machinery, air, or liquid is provided. The system includes a heat exchanger, a cooling water supply device, cooling water circulation piping, a flow rate adjustment valve, a cooling water supply system, and a controller for controlling the flow rate of cooling water. The system includes separate loops for the circulation piping and the cooling supply system. The separate loops are coupled to one another at an inlet and an outlet of the system.
摘要翻译： 提供了用于冷却诸如机械，空气或液体的热交换对象的热交换冷却系统。 该系统包括热交换器，冷却水供应装置，冷却水循环管道，流量调节阀，冷却水供应系统和用于控制冷却水流量的控制器。 该系统包括用于循环管道和冷却供应系统的单独回路。 单独的环在系统的入口和出口处彼此联接。
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公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译： 微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。
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公开(公告)号：US08114245B2
公开(公告)日：2012-02-14
申请号：US10304869
申请日：2002-11-26
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509 , C23C16/52 , C23C16/505 , C23C16/22 , C23C16/06
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/3266
摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.
摘要翻译： 一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。
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公开(公告)号：US20100183827A1
公开(公告)日：2010-07-22
申请号：US12663764
申请日：2008-06-11
IPC分类号： H05H1/46 , C23C16/511
CPC分类号： C23C16/511 , B05C13/00 , H01J37/32192 , H01J37/32266 , H05H1/46
摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.
摘要翻译： 提供能够减少电介质部件的使用量的等离子体处理装置。 等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分 暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。
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