摘要:
In a semiconductor memory device with multiple memory cells, each including a charge storage device and two transfer devices for transferring its charge, these memory cells are accessible with no select signal provided externally. The memory device includes a clock generator for generating first and second mutually complementary clock signals. In response to the first and second clock signals, one of first word lines and one of second word lines are activated alternately. Specifically, the first clock signal makes a memory cell accessible through a first bit line by activating the first word line and first transistor, while the second clock signal makes the memory cell accessible through a second bit line by activating the second word line and second transistor.
摘要:
The semiconductor storage device of this invention includes memory cells each having two transistors and one storage capacitor. Each memory cell is connected with a first word line and a first bit line for a first port and a second word line and a second bit line for a second port. The first and second bit lines are alternately disposed in an open bit line configuration. In the operation of the semiconductor storage device, in a period when a first precharge signal for precharging each first bit line or a first sense amplifier activating signal for activating a first sense amplifier is kept in an active state, a second precharge signal for precharging each second bit line and a second sense amplifier activating signal for activating a second sense amplifier are both placed in an inactive state.
摘要:
A cache memory including a first memory array and a main memory including a second memory array are integrated together on the same semiconductor substrate. Each memory cell in the first memory array is of a 2Tr1C type including: first and second transistors, the sources of which are connected together; and a data storage capacitor, one of the two electrodes of which is connected to the common source of the first and second transistors. Each memory cell in the second memory array is of a 1Tr1C type including: a third transistor; and a data storage capacitor, one of the two electrodes of which is connected to the source of the third transistor.
摘要:
A memory array divided into a plurality of sub-memory-arrays is disposed on a chip so that, if a specified sub-memory-array is selected by a sub-memory-array selecting circuit, a normal read/write operation is performed with respect to the sub-memory-array based on an address indicated by a group of external address signals. At the same time, a clock generator for self-refresh mounted on a chip generates a word-line basic clock for self-refresh and a word-line basic clock for refresh, thereby selecting the word lines in the sub-memory-arrays which have not been selected. Prior to a predetermined time at which the sub-memory-array subjected to a refresh operation is subsequently selected, a refresh halt signal is outputted so as to forcibly halt the refresh operation, thereby preventing insufficient recharging of a memory cell. Each of the plurality of sub-memory-arrays stores, of sequential sets of image data, data on one frame or one field.
摘要:
A communication device such as a video telephone is connected to a telephone line together with a telephone set at both parties. In response to an operation for removing a handset from a hook of the telephone set at this party, the video telephone at this party is initiated. Each of the video telephones includes a mode selecting switch and DTMF receiver which receives a DTMF signal from one of the telephone sets and decodes a received DTMF signal to output data representative of the mode of the video telephone. When a flag "1" is set, a mode of the video telephone at this party can be controlled in response to the DTMF signal which is received by the DTMF receiver from the telephone set at this party and, when a flat "2" is set a mode of the video telephone at this party can be controlled in response to the DTMF signal which is received by the DTMF receiver from the telephone set at the other party.
摘要:
Disclosed is a method for fabricating an interconnection structure comprising a step of depositing an Al or Al alloy film on a dielectric film by a sputtering method improved in step coverage, a step of processing said Al or Al alloy film or a layered metal film thereof with another metal film into a metal line, and a step of depositing a film of high melting point metal or alloy thereof on the top and side surfaces of said line.
摘要:
A replaceable gang head machine tool including a machine base, a working unit thereon, plural gang heads on the periphery of the working unit, and an index table on the upper side of the working unit, further including a supporting base positioned above the machine tool, a stock apparatus mounted on the supporting base comprising a center support, plural gang heads on the periphery of the center support, and an index table on the upper side thereof; and a replacing apparatus positioned away from the machine tool and the stock apparatus extending between the machine tool and the stock apparatus for effecting a replacement between the gang heads on the machine tool and the gang heads on the stock apparatus.
摘要:
A solid-state color imaging camera comprises three solid-state image sensors each of which has a two-dimensional array of picture elements arranged with respective predetermined pitches in vertical and horizontal directions. The first, second and third image sensors are used for green, red and blue lights. The optical positioning of the first image sensor is shifted with respect to the second and third image sensors by the half of the picture element pitch in the vertical direction.
摘要:
The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.