公开(公告)号：US11769985B2

公开(公告)日：2023-09-26

申请号：US17586305

申请日：2022-01-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Hui Chen ,  Junpeng Shi ,  Xinglong Li ,  Chi-Wei Liao ,  Weng-Tack Wong ,  Chih-Wei Chao ,  Chen-ke Hsu

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/06 ,  H01S5/40 ,  H01S5/02255 ,  F21V7/00 ,  H01S5/02208

CPC classification number: H01S5/0087 ,  H01S5/02255 ,  H01S5/02461 ,  H01S5/0609 ,  H01S5/4012 ,  F21V7/0008 ,  H01S5/02208 ,  H01S5/02469 ,  H01S5/4056

Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

公开(公告)号：US11462517B2

公开(公告)日：2022-10-04

申请号：US16899413

申请日：2020-06-11

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Ping Zhang ,  Junpeng Shi ,  Senpeng Huang ,  Zhen-duan Lin ,  Shunyi Chen ,  Chen-ke Hsu

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/50

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.

公开(公告)号：US11362074B2

公开(公告)日：2022-06-14

申请号：US16878290

申请日：2020-05-19

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Shunyi Chen ,  Junpeng Shi ,  Weng-Tack Wong ,  Chen-ke Hsu ,  Chih-Wei Chao

IPC: H01L25/16 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48

Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.

公开(公告)号：USD761215S1

公开(公告)日：2016-07-12

申请号：US29526628

申请日：2015-05-12

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Designer： Junpeng Shi ,  Pei-Song Cai ,  Zhenduan Lin ,  Hao Huang

公开(公告)号：US09312449B2

公开(公告)日：2016-04-12

申请号：US14641424

申请日：2015-03-08

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lixun Yang ,  Junpeng Shi ,  Xinghua Liang ,  Gaolin Zheng ,  Zhibai Zhong ,  Shaohua Huang ,  Chih-Wei Chao

IPC: H01L33/14 ,  H01L33/40 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62

Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.

Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备​​的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。