Semiconductor light-emitting structure having low thermal stress
    11.
    发明授权
    Semiconductor light-emitting structure having low thermal stress 失效
    具有低热应力的半导体发光结构

    公开(公告)号:US08519419B2

    公开(公告)日:2013-08-27

    申请号:US13171472

    申请日:2011-06-29

    IPC分类号: H01L33/00

    摘要: A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

    摘要翻译: 半导体发光结构包括硅衬底,分布式布拉格反射器,半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

    Method for manufacturing light emitting chip
    12.
    发明授权
    Method for manufacturing light emitting chip 失效
    制造发光芯片的方法

    公开(公告)号:US08563340B2

    公开(公告)日:2013-10-22

    申请号:US13216244

    申请日:2011-08-24

    IPC分类号: H01L21/00 H01L33/60

    摘要: A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

    摘要翻译: 制造发光芯片的方法包括以下步骤:提供其上具有多个分离的外延岛的衬底,其中所述外延岛通过沟道彼此间隔开; 用绝缘材料填充通道; 在绝缘材料和外延岛上依次形成反射层,过渡层和基底; 去除衬底和绝缘材料以暴露通道; 并且切割反射层,过渡层和基底,以沿通道形成多个独立的芯片。

    Light emitting diode with peripheral circular slots and method for manufacturing the same
    13.
    发明授权
    Light emitting diode with peripheral circular slots and method for manufacturing the same 有权
    具有周边圆形槽的发光二极管及其制造方法

    公开(公告)号:US08536597B2

    公开(公告)日:2013-09-17

    申请号:US13214254

    申请日:2011-08-22

    IPC分类号: H01L33/14 H01L33/18

    摘要: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

    摘要翻译: 发光二极管芯片包括导电衬底,设置在衬底上的反射层,形成在反射层上的半导体结构,设置在半导体结构上的电极和延伸穿过半导体结构的多个槽。 半导体结构包括形成在反射层上的P型半导体层,形成在P型半导体层上的发光层和形成在发光层上的N型半导体层。 在半导体结构中和电极周围限定电流扩散区。 槽位于电流扩散区域外部。

    Light emitting diode and manufacturing method thereof
    14.
    发明授权
    Light emitting diode and manufacturing method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US08466033B2

    公开(公告)日:2013-06-18

    申请号:US13052127

    申请日:2011-03-21

    IPC分类号: H01L21/76 H01L21/70

    摘要: A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.

    摘要翻译: 发光二极管包括衬底,缓冲层,半导体层和半导体发光层。 缓冲层设置在基板上。 半导体层设置在缓冲层上。 半导体发光层设置在半导体层上。 在半导体层内限定多个空隙。 每个空隙都包围其中的空气。 还提供了一种用于制造发光二极管的方法。 由半导体发光层朝向衬底产生的光被空隙反射以发射出发光二极管。

    Tape roll in-series package machine
    16.
    发明授权
    Tape roll in-series package machine 失效
    卷筒式串联包装机

    公开(公告)号:US5732536A

    公开(公告)日:1998-03-31

    申请号:US739072

    申请日:1996-10-28

    IPC分类号: B65B5/10 B65B35/30

    CPC分类号: B65B5/106

    摘要: A tape roll in-series package machine for neatly packing a plurality of tape rolls into a paper box. In includes (a) a conveying device, (b) an in-series filling device, and (c) a paper box elevating device. The in-series filling device contains first, second, and third pneumatic cylinder each of which is connected to a receiving plate to cooperatively pack a row of the tape rolls into a paper box. The paper elevating device contains (i) a paper box conveyor which is divided into front section, middle and rear sections, each of the sections is driven by a separate mechanism; (ii) an elevating frame disposed above the middle section of the paper box conveyor, wherein the elevating frame contains a pair of fending plates each being driven by a revolving pneumatic cylinder for holding the paper box in place and facilitating the incoming and outgoing motions of the paper box; and (iii) a Z-axis stepping motor which is provided to control an up-and-down motion of the elevating frame so as to adjust a vertical position of the paper box.

    摘要翻译: 一种用于将多个带卷整齐地包装在纸盒中的胶带卷筒式包装机。 包括(a)输送装置,(b)串联充填装置,和(c)纸盒升降装置。 串联式灌装装置包括第一,第二和第三气缸,每个气缸连接到接收板,以将一排带卷协同地包装在纸盒中。 纸张升降装置包括:(i)纸箱输送机,其分为前段,中间和后段,每个区段由单独的机构驱动; (ii)设置在纸箱输送机的中间部分上方的升降框架,其中升降架包括一对防火板,每个挡板由用于将纸盒保持在适当位置的旋转气动缸驱动,并且有利于进入和离开运动 纸盒; 和(iii)Z轴步进电机,其被设置为控制升降框架的上下运动,以调节纸盒的垂直位置。

    Method for a bin ratio forecast at new tape out stage
    20.
    发明授权
    Method for a bin ratio forecast at new tape out stage 有权
    新磁带出站时的比例预测方法

    公开(公告)号:US08082055B2

    公开(公告)日:2011-12-20

    申请号:US12499345

    申请日:2009-07-08

    IPC分类号: G06F19/00

    CPC分类号: G06Q10/06 G06Q30/0202

    摘要: A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.

    摘要翻译: 公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。 该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。