摘要:
A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.
摘要:
A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.
摘要:
A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.
摘要:
A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.
摘要:
A light emitting diode includes a substrate, a buffer layer on the substrate, a patterned layer having a first reflective index on the buffer layer, a semiconductor layer having a second reflective index on the patterned layer, and an illumination structure on the semiconductor layer. A method for manufacturing the light emitting diode is also provided.
摘要:
A tape roll in-series package machine for neatly packing a plurality of tape rolls into a paper box. In includes (a) a conveying device, (b) an in-series filling device, and (c) a paper box elevating device. The in-series filling device contains first, second, and third pneumatic cylinder each of which is connected to a receiving plate to cooperatively pack a row of the tape rolls into a paper box. The paper elevating device contains (i) a paper box conveyor which is divided into front section, middle and rear sections, each of the sections is driven by a separate mechanism; (ii) an elevating frame disposed above the middle section of the paper box conveyor, wherein the elevating frame contains a pair of fending plates each being driven by a revolving pneumatic cylinder for holding the paper box in place and facilitating the incoming and outgoing motions of the paper box; and (iii) a Z-axis stepping motor which is provided to control an up-and-down motion of the elevating frame so as to adjust a vertical position of the paper box.
摘要:
A game apparatus having an attack apparatus, a wearable apparatus and a communication apparatus is provided. The communication apparatus determines a property of the attack apparatus according to an attack signal sensed by the wearable apparatus and adjusts a status prompt signal emitted by the wearable apparatus according to the property of the attack apparatus.
摘要:
A manufacturing method of an iron complex is mixing ferric chloride and at least one chelating agent with a solvent, wherein Fe3+ ions of ferric chloride is reacted with the at least one chelating agent to form an iron complex Fe[R1]a[R2]b[H2O]c3+ or Fe[R1]a[H2O]c3+, wherein the at least one chelating agent is selected from a group including ethylenediamine, 1,10-phenanthroline, 2,2′-Bipyridine, diethylenetriamine, triethylenetetraamine, phenanthroline, or bipyridine. Moreover, a method for producing an iron oxide catalyst is mixing ferric chloride, at least one chelating agent and the support with a solvent to form an iron complex, which is incorporated with the support. Following, a drying step and a heat treatment step are processed to get the iron oxide catalyst.
摘要翻译:铁络合物的制造方法是将氯化铁和至少一种螯合剂与溶剂混合,其中氯化铁的Fe 3+离子与至少一种螯合剂反应形成铁络合物Fe [R1] a [R2] b [H2O] c3 +或Fe [R1] a [H2O] c3 +,其中所述至少一种螯合剂选自包括乙二胺,1,10-菲咯啉,2,2'-联吡啶,二亚乙基三胺,三亚乙基四胺,菲咯啉或 联吡啶。 此外,氧化铁催化剂的制造方法是将氯化铁,至少一种螯合剂和载体与溶剂混合,形成配合了载体的铁络合物。 接着,对干燥工序和热处理工序进行处理,得到氧化铁催化剂。
摘要:
Peptide ligands are found. All of the peptide ligands have high-affinity against a tumor biomarker, GRP-78. Phage display library is used for screening out the peptide ligands. The peptide ligands can be labeled with a luminescent or a radioactive material to be used as probes for detecting tumor.
摘要:
A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.