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28 条记录 (耗时 0.036 秒)

    Oxide superconductive wire and process for manufacturing the same
    11.
    发明授权
    Oxide superconductive wire and process for manufacturing the same 失效
    氧化物超导线及其制造方法

    公开(公告)号：US5663528A

    公开(公告)日：1997-09-02

    申请号：US170959

    申请日：1993-12-21

    申请人： Yoshiaki Tanaka ,  Tomoyuki Yanagiya ,  Fumiaki Matsumoto ,  Masao Fukutomi ,  Toshihisa Asano ,  Kazunori Komori ,  Hiroshi Maeda

    发明人： Yoshiaki Tanaka ,  Tomoyuki Yanagiya ,  Fumiaki Matsumoto ,  Masao Fukutomi ,  Toshihisa Asano ,  Kazunori Komori ,  Hiroshi Maeda

    IPC分类号： C01G29/00 ,  C01G1/00 ,  H01B12/04 ,  H01B13/00 ,  H01L39/14 ,  H01L39/24 ,  B32B9/00

    CPC分类号： H01L39/248 ,  H01L39/143 ,  Y10S505/884

    摘要： A clad superconductive wire or tape of an oxide superconductive material and a silver-copper alloy base containing 0.05-90 atomic % copper or a silver alloy. The silver-copper alloy base contains one or more elements selected from the group of Zr, Hf, Al, V, Nb and Ta in amounts of from 0.01-3 atomic %, or contains Au in amounts of 0.01-10 atomic %. The silver alloy contains one or more elements selected from the group of Ti, Zr, Hf, V, Nb, Ta, Mg, Ca, Sr and Ba in amounts of from 0.01 to 3 atomic %, or one or more elements selected from the group of Au, Al, Ga, In and Sn in amounts of 0.05 to 5 atomic %. The base material is filled with a Bi-containing oxide of Bi.sub.1 Pb.sub.u Sr.sub.x Ca.sub.y Cu.sub.z O.sub.w wherein u=0-0.3, X=0.8-1.2, y=0.2-1.2, and z=0.8-2.0, and processed to obtain a superconductive wire or tape having enhanced mechanical strength, superconductivity and plastic workability.

    摘要翻译： 包覆超导线或氧化物超导材料的带和含有0.05-90原子％铜或银合金的银 - 铜合金基体。 银 - 铜合金基体含有选自Zr，Hf，Al，V，Nb和Ta中的一种或多种元素，其量为0.01-3原子％，或含有0.01-10原子％的Au。 银合金含有选自Ti，Zr，Hf，V，Nb，Ta，Mg，Ca，Sr和Ba中的一种或多种元素，其含量为0.01至3原子％，或选自以下的一种或多种元素： Au，Al，Ga，In和Sn的含量为0.05〜5原子％。 用Bi1PbuSrxCayCuzOw的Bi的氧化物填充基材，其中u = 0-0.3，X = 0.8-1.2，y = 0.2-1.2和z = 0.8-2.0，并加工得到具有增强的超导线或带 机械强度，超导性和塑性加工性。

    Field effect transistor and display using same
    13.
    发明申请
    Field effect transistor and display using same 有权
    场效应晶体管和显示器使用相同

    公开(公告)号：US20070012922A1

    公开(公告)日：2007-01-18

    申请号：US10557059

    申请日：2005-01-12

    申请人： Kenji Harada ,  Takayuki Takeuchi ,  Norishige Nanai ,  Kazunori Komori

    发明人： Kenji Harada ,  Takayuki Takeuchi ,  Norishige Nanai ,  Kazunori Komori

    IPC分类号： H01L29/76

    CPC分类号： H01L51/0541 ,  H01L51/0512 ,  H01L51/0545

    摘要： The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact with each other at least electrically. The first electrode (16) is arranged above the semiconductor layer (15), the second electrode (12) is arranged below the semiconductor layer (15), and the third electrode (14) is arranged beside the semiconductor layer (15). The semiconductor layer (15) is connected electrically to two electrodes selected from the first electrode (16), the second electrode (12), and the third electrode (14), and the electrically insulating layers (13,17) are interposed between the electrodes (12, 14, 16). The first electrode (16) lies over the semiconductor layer (15) so as to extend beyond the periphery of the semiconductor layer (15). With this configuration, it becomes possible to provide a field effect transistor that is highly resistant to air and water and thus has a long lifetime even though an organic semiconductor is used therein, and a display device using such a field effect transistor.

    摘要翻译： 本发明提供了一种场效应晶体管，其包括含有有机物质的半导体层（15），以及与每个不接触的第一电极（16），第二电极（12）和第三电极（14） 其他至少电。 第一电极（16）配置在半导体层（15）的上方，第二电极（12）配置在半导体层（15）的下方，第三电极（14）配置在半导体层（15）的旁边。 半导体层（15）电连接到从第一电极（16），第二电极（12）和第三电极（14）中选择的两个电极，并且电绝缘层（13,17）介于 电极（12,14,16）。 第一电极（16）位于半导体层（15）之上，以便延伸超出半导体层（15）的周边。 利用这种配置，可以提供一种对空气和水具有高度抗性的场效应晶体管，并且因此即使在其中使用有机半导体也具有长的寿命，以及使用这种场效应晶体管的显示装置。

    Display unit and drive method therefor
    15.
    发明授权
    Display unit and drive method therefor 有权
    显示单元及其驱动方式

    公开(公告)号：US06909415B2

    公开(公告)日：2005-06-21

    申请号：US10019116

    申请日：2001-04-23

    申请人： Katsuhiko Kumagawa ,  Masanori Kimura ,  Tetsuo Fukami ,  Akio Takimoto ,  Yukio Tanaka ,  Kazunori Komori

    发明人： Katsuhiko Kumagawa ,  Masanori Kimura ,  Tetsuo Fukami ,  Akio Takimoto ,  Yukio Tanaka ,  Kazunori Komori

    IPC分类号： G02F1/1362 ,  G09F9/33 ,  G09G3/32 ,  G09G3/36

    CPC分类号： G09G3/3225 ,  G02F1/136213 ,  G09F9/33 ,  G09G3/3208 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3659 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0876 ,  G09G2310/0262 ,  G09G2320/0219

    摘要： The present invention provides a display apparatus that can reduce a voltage irregularity and a brightness irregularity accompanied by making an enlarged and a high resolution type display apparatus. The display apparatus comprises plural pixel electrodes 5 arranged in a matrix, a switching element 3 connected with the pixel electrode, a scanning electrode 1, a picture signal electrode 2, an opposite electrode forming a capacitance with the pixel electrode 5, and further comprising; a storage capacitance 7 between the pixel electrode 5 and the scanning electrode 5 other than the scanning electrode 1 of the present line; more than two capacitance elements connected with the pixel electrode 5, including at least one of a gate-drain inter-electrode capacitance 4 of the switching element 3 and the storage capacitance 7, having a different value according to the distance from the power feeding edge of the scanning electrode 1; wherein, each capacitance in each pixel is set so that, when all capacitance connected with the pixel electrode 5 in a pixel is denoted as Ctot, a first capacitance ratio α gd=Cgd/Ctot increases continuously or in stages according to the distance from the power feeding edge of the scanning electrode 1, or a second capacitance ratio α st=Cst/Ctot is substantially constant.

    摘要翻译： 本发明提供一种显示装置，其能够降低电压不均匀性和亮度不规则性，伴随着制造放大和高分辨率型显示装置。 显示装置包括以矩阵形式布置的多个像素电极5，与像素电极连接的开关元件3，扫描电极1，图像信号电极2，与像素电极5形成电容的相对电极，还包括： 像素电极5和扫描电极5之间的除了当前行的扫描电极1之外的存储电容7; 与像素电极5连接的多于两个的电容元件，包括开关元件3的栅极 - 漏极间电极间电容4和存储电容7中的至少一个，根据与馈电边缘的距离具有不同的值 的扫描电极1; 其中，每个像素中的每个电容被设置为使得当与像素中的像素电极5连接的所有电容被表示为Ctot时，第一电容比αgd = Cgd / Ctot根据距离 扫描电极1的馈电边缘或第二电容比αst = Cst / Ctot基本上是恒定的。

    Cemented lens group
    16.
    发明授权
    Cemented lens group 失效
    水泥透镜组

    公开(公告)号：US06816322B2

    公开(公告)日：2004-11-09

    申请号：US10284362

    申请日：2002-10-31

    申请人： Tetsuya Abe ,  Kazunori Komori

    发明人： Tetsuya Abe ,  Kazunori Komori

    IPC分类号： G02B900

    CPC分类号： G02B3/00 ,  G02B7/008

    摘要： A cemented lens group including two lens elements, which are cemented to each other by an adhesive; wherein an adhesive layer formed by the adhesive between the two lens elements has elasticity, and the following condition(1) is satisfied: |&Dgr;&agr;·D/d|

    Thin-film transistor
    17.
    发明授权
    Thin-film transistor 失效
    薄膜晶体管

    公开(公告)号：US5528055A

    公开(公告)日：1996-06-18

    申请号：US136752

    申请日：1993-10-15

    申请人： Kazunori Komori ,  Mamoru Takeda ,  Yoneharu Takubo

    发明人： Kazunori Komori ,  Mamoru Takeda ,  Yoneharu Takubo

    IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/786 ,  H01L29/76 ,  H01L27/108 ,  H01L29/04

    CPC分类号： H01L29/41733

    摘要： A thin-film transistor of an inverted-staggered structure includes a semiconductor layer with a channel portion, a protective insulating film extending on the channel portion of the semiconductor layer, a source electrode, and a drain electrode. The protective insulating film has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlaps one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.

    摘要翻译： 反交错结构的薄膜晶体管包括具有沟道部分的半导体层，在半导体层的沟道部分上延伸的保护绝缘膜，源电极和漏电极。 保护绝缘膜具有四个角的矩形形状，并且两个角中的每一个与源电极和漏极之一重叠，而另外两个角与源电极和漏电极都不重叠。 可以修改薄膜晶体管，使得其中一个角与源电极和漏极之一重叠，而另外三个角与源电极和漏电极都不重叠。

    Thin-film transistor, manufacturing method therefor, and electronic device using a thin-film transistor
    18.
    发明授权
    Thin-film transistor, manufacturing method therefor, and electronic device using a thin-film transistor 有权
    薄膜晶体管及其制造方法以及使用薄膜晶体管的电子器件

    公开(公告)号：US08436355B2

    公开(公告)日：2013-05-07

    申请号：US12742137

    申请日：2008-11-14

    申请人： Takaaki Ukeda ,  Tohru Saitoh ,  Kazunori Komori ,  Sadayoshi Hotta

    发明人： Takaaki Ukeda ,  Tohru Saitoh ,  Kazunori Komori ,  Sadayoshi Hotta

    IPC分类号： H01L33/00

    CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757

    摘要： Disclosed is a method that includes: forming a gate electrode on a substrate, then forming an insulation layer so as to completely cover the gate electrode, thereafter forming a semiconductor layer on the insulation layer, and then forming a crystallization-inducing metal layer on the semiconductor layer; removing the part of at least the crystallization-inducing metal layer that is over a channel region of the semiconductor layer; forming source and drain electrodes at a location which is over source and drain regions respectively located at opposite sides with respect to the channel region of the semiconductor layer and is above the crystallization-inducing metal layer; and heating the crystallization-inducing metal layer so as to form a silicide layer of a crystallization-inducing metal.

    摘要翻译： 公开了一种方法，其包括：在基板上形成栅电极，然后形成绝缘层，以完全覆盖栅电极，然后在绝缘层上形成半导体层，然后在其上形成结晶诱导金属层 半导体层; 去除所述半导体层的沟道区域上的至少所述结晶诱导金属层的一部分; 在源极和漏极区域分别位于相对于半导体层的沟道区的相对侧并位于结晶诱导金属层之上的位置处形成源极和漏极; 并加热结晶诱导金属层，以形成结晶诱导金属的硅化物层。

    Organic field effect transistor and display using same
    19.
    发明授权
    Organic field effect transistor and display using same 有权
    有机场效应晶体管和显示器使用相同

    公开(公告)号：US07382040B2

    公开(公告)日：2008-06-03

    申请号：US10557059

    申请日：2005-01-12

    申请人： Kenji Harada ,  Takayuki Takeuchi ,  Norishige Nanai ,  Kazunori Komori

    发明人： Kenji Harada ,  Takayuki Takeuchi ,  Norishige Nanai ,  Kazunori Komori

    IPC分类号： H01L23/58

    CPC分类号： H01L51/0541 ,  H01L51/0512 ,  H01L51/0545

    摘要： The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact with each other at least electrically. The first electrode (16) is arranged above the semiconductor layer (15), the second electrode (12) is arranged below the semiconductor layer (15), and the third electrode (14) is arranged beside the semiconductor layer (15). The semiconductor layer (15) is connected electrically to two electrodes selected from the first electrode (16), the second electrode (12), and the third electrode (14), and the electrically insulating layers (13,17) are interposed between the electrodes (12, 14, 16). The first electrode (16) lies over the semiconductor layer (15) so as to extend beyond the periphery of the semiconductor layer (15). With this configuration, it becomes possible to provide a field effect transistor that is highly resistant to air and water and thus has a long lifetime even though an organic semiconductor is used therein, and a display device using such a field effect transistor.

    摘要翻译： 本发明提供了一种场效应晶体管，其包括含有有机物质的半导体层（15），以及与每个不接触的第一电极（16），第二电极（12）和第三电极（14） 其他至少电。 第一电极（16）配置在半导体层（15）的上方，第二电极（12）配置在半导体层（15）的下方，第三电极（14）配置在半导体层（15）的旁边。 半导体层（15）电连接到从第一电极（16），第二电极（12）和第三电极（14）中选择的两个电极，并且电绝缘层（13,17）介于 电极（12,14,16）。 第一电极（16）位于半导体层（15）之上，以便延伸超出半导体层（15）的周边。 利用这种配置，可以提供一种对空气和水具有高度抗性的场效应晶体管，并且因此即使在其中使用有机半导体也具有长的寿命，以及使用这种场效应晶体管的显示装置。