公开(公告)号：US20080017878A1

公开(公告)日：2008-01-24

申请号：US11773470

申请日：2007-07-05

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01L33/00

CPC分类号： H01L33/38

摘要： A semiconductor light-emitting diode includes an electrically conductive substrate transmissive to light-emitting wavelengths, and semiconductor layers including a light-emitting layer, on the substrate. A principal-surface electrode is located on the semiconductor layers and a rear-surface electrode having an opening is located on the rear surface of the substrate. The width of the opening is L, the distance between the rear-surface electrode and the light-emitting layer is t, L≦2 t, and the rear-surface electrode covers no more than 40% of the rear surface of the substrata.

摘要翻译： 半导体发光二极管包括在发光波长上透射的导电基板和包括发光层的半导体层。 主表面电极位于半导体层上，并且具有开口的后表面电极位于衬底的后表面上。 开口宽度为L，背面电极与发光层之间的距离为t，L <= 2t，后表面电极覆盖不超过衬底后表面的40％ 。

公开(公告)号：US20100202480A1

公开(公告)日：2010-08-12

申请号：US12499153

申请日：2009-07-08

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01S3/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/16 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2219 ,  H01S2301/18

摘要： A semiconductor light-emitting element s includes a semiconductor substrate; a semiconductor laminate structure having a first conductivity-type cladding layer, an active layer, a second conductivity-type cladding layer, and a second conductivity-type contact layer sequentially arranged on the semiconductor substrate; a stripe-shaped waveguide region on an upper surface of the semiconductor laminate structure; and recessed portions on the upper surface, spaced from the waveguide region; a first electrode electrically connected to the semiconductor substrate; a second electrode electrically connected to the contact layer; a pad electrode on the second electrode; and an inner recessed portion electrode in the recessed portions, on an insulating film.

摘要翻译： 半导体发光元件包括半导体衬底; 半导体层叠结构，其具有依次配置在所述半导体基板上的第一导电型包覆层，有源层，第二导电型包覆层和第二导电型接触层; 半导体层叠结构的上表面上的条状波导区域; 以及与所述波导区域间隔开的所述上表面上的凹部; 电连接到所述半导体衬底的第一电极; 电连接到所述接触层的第二电极; 第二电极上的焊盘电极; 以及在凹部中的内凹部电极，在绝缘膜上。

公开(公告)号：US07756177B2

公开(公告)日：2010-07-13

申请号：US11326503

申请日：2006-01-06

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34333

摘要： A semiconductor laser, having an active layer with a double-quantum-well structure, includes two InGaN well layers, each of which has a thickness of 5 nm. The threshold current deteriorates to a relatively small degree while differential efficiency is improved considerably in a region having a light confinement coefficient Γ of 3.0% or less. The light confinement coefficient indicates the proportion of light in the well layers with respect to light in the light emitting device, during light emission. When the light confinement coefficient Γ is less than 1.5%, the threshold current increases considerably and the improvement in differential efficiency becomes small. It is therefore preferable that the lower limit of the light confinement coefficient Γ be about 1.5%. A differential efficiency of 1.6 W/A or more is obtained when light the confinement coefficient Γ is 3.0% or less, and a differential efficiency of 1.7 W/A or more is obtained when the light confinement coefficient Γ is 2.6% or less.

摘要翻译： 具有双量子阱结构的有源层的半导体激光器包括两个InGaN阱层，每个InGaN阱层具有5nm的厚度。 在具有光限制系数＆Ggr的区域中，阈值电流恶化到相对较小的程度，而差分效率显着提高; 为3.0％以下。 光限制系数表示在发光期间阱层中的光相对于发光器件中的光的比例。 当光限制系数＆Ggr; 小于1.5％，阈值电流显着增加，差分效率的提高变小。 因此，优选的是，限光系数Ggr的下限 约为1.5％。 当限制系数＆Ggr;时，得到1.6W / A以上的微分效率。 为3.0％以下，并且当光限制系数＆Ggr; 2时，获得1.7W / A以上的微分效率。 为2.6％以下。

公开(公告)号：US07643527B2

公开(公告)日：2010-01-05

申请号：US11910930

申请日：2006-03-15

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductor structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L μm2 or less.

摘要翻译： 通过减少通过穿透位错部分的电流泄漏，获得具有耐电源浪涌的高静电耐受电压并且具有改善的长期可靠性的半导体激光器。 半导体激光器包括具有位错密度为1×10 5 cm -2以上的高位错区域的基板，位于基板上并具有有源层的结晶半导体结构，位于半导体结构上的绝缘膜，位于 并且与用于将电流注入有源层的半导体结构电连续，并且位于衬底的后表面上的背电极。 半导体激光器具有长度为L的激光谐振器，表面电极的面积为120×Lm2以下。

公开(公告)号：US20060098703A1

公开(公告)日：2006-05-11

申请号：US11262932

申请日：2005-11-01

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/12

摘要： A semiconductor light emitting device including an active layer interposed between an n-type cladding layer and a p-type cladding layer employs an AlxGa1-xN (AlGaN) layer having an Al composition ratio x satisfying 0.01≦x

摘要翻译： 包括介于n型包覆层和p型覆层之间的有源层的半导体发光器件采用Al x Ga 1-x N（AlGaN） 具有满足0.01 <= x <0.06的Al组成比x的层作为n型包覆层。 当Al组成比x降低到0.06以下时，AlGaN层的折射率增加。 因此，垂直方向上的近场图案（NFP）可以展开，并且FFP在垂直方向上的最大半峰值的全宽度可以最小化。 此外，由于与Al基板的晶格失配随着Al组成比的降低而降低，所以可以使AlGaN层形成得较厚而不会产生裂纹或位错，并且可以将光扩散到GaN基板中。

公开(公告)号：US20060097242A1

公开(公告)日：2006-05-11

申请号：US11269626

申请日：2005-11-09

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01L29/06

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34333

摘要： The present invention provides a semiconductor light-emitting device which exhibits small threshold current, high differential efficiency and good characteristics, by reducing electrons that overflow an electron barrier for trapping the electrons in an active layer. Of barrier layers that configure an active layer 20, a final barrier layer 1, which is a barrier layer closest to a p side, is made smaller in band gap than a barrier layer 2. Thus, as compared with a case where the barrier layer 1 is made of a material having the same band gap as that of the barrier layer 2, a band discontinuous amount (electron barrier) with an electron blocking layer 3 can be made larger. As a result, it is possible to reduce electrons that overflow the electron barrier.

摘要翻译： 本发明提供一种半导体发光器件，其通过减少溢出电子势垒的电子来捕获有源层中的电子，从而具有小的阈值电流，高的微分效率和良好的特性。 配置有源层20的阻挡层，最靠近p侧的阻挡层的阻挡层1比阻挡层2的带隙更小。 因此，与阻挡层1由阻挡层2的带隙相同的材料构成的情况相比，可以使具有电子阻挡层3的带不连续量（电子势垒）更大。 结果，可以减少溢出电子势垒的电子。

公开(公告)号：US06618411B1

公开(公告)日：2003-09-09

申请号：US09632908

申请日：2000-08-04

申请人： Tohru Takiguchi ,  Kyosuke Kuramoto

发明人： Tohru Takiguchi ,  Kyosuke Kuramoto

IPC分类号： H01S319

CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/2063 ,  H01S5/209

摘要： A ridge waveguide semiconductor laser that is excellent in optical output characteristic and high-frequency characteristic is provided. A p-type InP cladding layer having a ridge shape is formed over a p-type AlInAs cladding layer via a p-type InP layer and a p-type GaInAsP etching stopper layer, thereby suppressing the increase in the series resistance due to discontinuous band structure between an etching stopper layer and the AlGaInAs cladding layer and reducing the threshold current of the laser. Also the InP cladding layer is formed in a ridge shape with the portion near the base thereof being splayed like a skirt, thereby keeping the p-type metal electrode from the light emitting region and suppressing the absorption loss of light due to the p-type metal electrode. Further, by increasing the resistance of the active layers in the region that interposes a main current path, parasitic capacitance formed by the active layer in the region where current does not flow can be decreased thereby improving the high-frequency characteristic of the laser.

摘要翻译： 提供了具有优异的光输出特性和高频特性的脊波导半导体激光器。 通过p型InP层和p型GaInAsP蚀刻阻挡层在p型AlInAs覆盖层上形成具有脊形的p型InP覆盖层，由此抑制由于不连续带导致的串联电阻的增加 蚀刻停止层与AlGaInAs覆层之间的结构，并且降低激光器的阈值电流。 此外，InP包层形成为脊状，其基部附近的部分像裙部一样地露出，从而保持p型金属电极不受发光区域的影响，并且抑制由于p型而导致的光的吸收损失 金属电极。 此外，通过增加插入主电流路径的区域中的有源层的电阻，可以减小由有源层在电流不流动的区域形成的寄生电容，从而提高激光器的高频特性。

公开(公告)号：US09450370B2

公开(公告)日：2016-09-20

申请号：US14412566

申请日：2012-12-10

申请人： Hidenori Fukahori ,  Takayuki Yanagisawa ,  Kyosuke Kuramoto ,  Fumio Shoda

发明人： Hidenori Fukahori ,  Takayuki Yanagisawa ,  Kyosuke Kuramoto ,  Fumio Shoda

IPC分类号： H01S3/109 ,  H01S3/063 ,  H01S3/08 ,  H01S5/14 ,  H01S3/0941 ,  H01S3/10

CPC分类号： H01S3/109 ,  H01S3/063 ,  H01S3/0632 ,  H01S3/08054 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/10061 ,  H01S5/14

摘要： A laser medium 21 is shaped like a plate and has a waveguide structure in a direction of the thickness of a surface thereof perpendicular to the optical axis thereof. A nonlinear material 31 is placed on the optical axis of the laser medium 21 close to the laser medium 21 and has a waveguide structure in the same direction as that of the waveguide structure of the laser medium 21. A ¼ wavelength plate 41 is placed close to one of surfaces, which are perpendicular to the optical axis, of the nonlinear material 31, the one being opposite to a surface close to the laser medium 21.

摘要翻译： 激光介质21成形为板状，并且在与其光轴垂直的表面的厚度方向上具有波导结构。 将非线性材料31放置在靠近激光介质21的激光介质21的光轴上，并且具有与激光介质21的波导结构相同方向的波导结构。1/4波片41靠近 到非线性材料31的垂直于光轴的一个表面，该表面与靠近激光介质21的表面相对。

公开(公告)号：US09214784B2

公开(公告)日：2015-12-15

申请号：US14374696

申请日：2012-03-19

申请人： Kyosuke Kuramoto ,  Takayuki Yanagisawa ,  Yoshihito Hirano

发明人： Kyosuke Kuramoto ,  Takayuki Yanagisawa ,  Yoshihito Hirano

IPC分类号： H01S3/091 ,  H01S5/04 ,  G02F1/377 ,  H01S3/109 ,  H01S3/06 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/04 ,  G02F1/35

CPC分类号： H01S5/041 ,  G02F1/377 ,  G02F2001/3509 ,  H01S3/0401 ,  H01S3/0405 ,  H01S3/0612 ,  H01S3/0615 ,  H01S3/0621 ,  H01S3/0625 ,  H01S3/0627 ,  H01S3/09415 ,  H01S3/109 ,  H01S3/1611 ,  H01S3/1673 ,  H01S2301/02

摘要： An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.

摘要翻译： 固体激光元件3的端面3b以这样的方式倾斜，即假设激光从端面入射到空气上，与端面的内侧垂直的入射角与 激光的行进方向基本上与入射面处的布鲁斯特角度匹配，波长转换元件4的端面4a倾斜，假设激光从端面入射到空气上， 与激光的行进方向形成的端面的内侧的法线的入射角基本上与入射面处的布鲁斯特角度匹配，端面3b和端面4b以如下方式配置： 相互对立。

公开(公告)号：US08263999B2

公开(公告)日：2012-09-11

申请号：US11936846

申请日：2007-11-08

申请人： Akihito Ohno ,  Kyosuke Kuramoto

发明人： Akihito Ohno ,  Kyosuke Kuramoto

IPC分类号： H01L33/001

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.

摘要翻译： 氮化物半导体发光器件包括p型接触层，p型接触层下面的p型中间层和p型中间层下面的p型覆层。 p型接触层和p型中间层之间以及p型中间层和p型覆层之间的带隙能量差分别为200meV以下。