公开(公告)号：US20050233079A1

公开(公告)日：2005-10-20

申请号：US11155575

申请日：2005-06-20

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

IPC分类号： C23C16/18 ,  C23C16/02 ,  C23C16/16 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  C23C16/00 ,  H05H1/24

CPC分类号： C23C16/455 ,  C23C16/16 ,  H01L21/28556

摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

摘要翻译： 公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。 执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

公开(公告)号：US06436203B1

公开(公告)日：2002-08-20

申请号：US09551393

申请日：2000-04-18

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： B05D136

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

摘要翻译： 本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。 在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中 引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。 对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

公开(公告)号：US5904557A

公开(公告)日：1999-05-18

申请号：US794936

申请日：1997-02-04

申请人： Takayuki Komiya ,  Yumiko Kawano

发明人： Takayuki Komiya ,  Yumiko Kawano

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76883 ,  H01L23/53214 ,  H01L21/31053 ,  H01L2924/0002

摘要： A method for forming a multilevel interconnection of a semiconductor device of the present invention includes the steps of forming a first wiring layer by depositing a metallic film containing aluminum on an insulating film of a substrate and patterning the metallic film, forming an interlayer insulating film on the entire surface of the substrate to cover the wiring layer from the upper side, forming a connection hole reaching to the first wiring layer at a predetermined position of the interlayer insulating film, selectively depositing aluminum onto an interior of the connection hole at a volume fraction of 100% or more by CVD to fill the interior of the connection hole, flattening the entire upper surface of the interlayer insulating film including the connection hole filled with aluminum by a polishing process, washing the entire surface flattened by the polishing process, and depositing the metallic film containing aluminum at a predetermined position of the upper surface of the flattened and washed interlayer insulating film and patterning the metallic film, thereby forming a second wiring layer connected to the first wiring layer through aluminum filled in the connection hole.

摘要翻译： 形成本发明的半导体器件的多层互连的方法包括以下步骤：通过在衬底的绝缘膜上沉积包含铝的金属膜形成第一布线层并对金属膜进行图案化，形成层间绝缘膜 基板的整个表面从上侧覆盖布线层，在层间绝缘膜的预定位置处形成到达第一布线层的连接孔，以选择性的方式将铝沉积到连接孔的内部，体积分数 通过CVD填充100％以上以填充连接孔的内部，通过抛光处理使包括填充有铝的连接孔的层间绝缘膜的整个上表面变平，洗涤通过抛光处理而变平的整个表面，以及沉积 在f的上表面的预定位置处含有铝的金属膜 拉延和洗涤的层间绝缘膜并图案化金属膜，从而形成通过填充在连接孔中的铝连接到第一布线层的第二布线层。

公开(公告)号：US08927060B2

公开(公告)日：2015-01-06

申请号：US13377199

申请日：2010-06-02

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： C23C16/00 ,  C23C16/06 ,  H01L45/00 ,  C23C16/30 ,  G11B7/2433 ,  G11B7/26 ,  G11B7/243

CPC分类号： H01L45/144 ,  C23C16/305 ,  G11B7/2433 ,  G11B7/266 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/1616

摘要： There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.

摘要翻译： 提供了通过使用气态Ge源材料，气态Sb源材料和气态Te源材料的CVD方法在基板上形成具有Ge 2 Sb 2 Te 5组成的Ge-Sb-Te膜的方法。 该方法包括将衬底加载到处理室内（工艺1）; 通过供给气态Ge源材料和气态Sb源材料，在基板上进行第一阶段成膜工序（工序2）。 并且通过供给气态Sb源材料和气态Te源材料，在通过第一阶段成膜工艺获得的膜上进行第二阶段成膜工艺（工艺3）。 Ge-Sb-Te膜由通过方法2获得的膜和通过方法3获得的膜形成。

公开(公告)号：US08658951B2

公开(公告)日：2014-02-25

申请号：US13092650

申请日：2011-04-22

申请人： Tomihiro Yonenaga ,  Yumiko Kawano

发明人： Tomihiro Yonenaga ,  Yumiko Kawano

IPC分类号： H05B6/10

CPC分类号： H01L21/67109 ,  H01L21/67303

摘要： In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit.

摘要翻译： 在分别加热放置在多个基座上的基板时，均匀地控制每个基板的面内温度。 一种热处理设备设置有基座，即用于在其上放置晶片的导电构件，具有电分割成其中心部分的感应加热体及其周边部分; 支撑排列成一排的基座的石英舟; 感应线圈，其布置在处理室内部以围绕每个基座的圆周并且被配置为使得感应线圈的温度可以自由地调节; 以及控制单元，其通过改变感应加热体的中心部分的热值与周边部分的热值之比，通过从高电平控制施加到感应线圈的不同频率的两个高频电流来进行温度控制 频率电流电路。

公开(公告)号：US20130183446A1

公开(公告)日：2013-07-18

申请号：US13825579

申请日：2011-09-05

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： C23C16/06 ,  C23C16/44

CPC分类号： C23C16/06 ,  C23C16/305 ,  C23C16/44 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

摘要： Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

摘要翻译： 公开了一种形成Ge-Sb-Te膜的方法，其中将衬底设置在处理室内，气态Ge材料，气态Sb材料和Te材料被引入处理室中，使得Ge 由Ge2Sb2Te5形成的-Sb-Te膜通过CVD形成在基板上。 形成Ge-Sb-Te膜的方法包括：步骤（步骤2），其中气态Ge材料和气态Sb材料或替代地少量气态Te材料不足以形成Ge2Sb2Te5，除了气体 将Ge材料和气态Sb材料引入处理室，使得在基板上形成不含Te或含有Te的量的前体膜，其量小于Ge 2 Sb 2 Te 5中的Te; 和步骤（步骤3），其中将气态Te材料引入处理室，并使前体膜吸附Te，从而调节膜中的Te浓度。

公开(公告)号：US08293327B2

公开(公告)日：2012-10-23

申请号：US12145831

申请日：2008-06-25

申请人： Hidekimi Kadokura ,  Shintaro Higashi ,  Yoshinori Kuboshima ,  Yumiko Kawano

发明人： Hidekimi Kadokura ,  Shintaro Higashi ,  Yoshinori Kuboshima ,  Yumiko Kawano

IPC分类号： C23C16/00 ,  C07F1/00

CPC分类号： C07F17/00

摘要： The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiO3 film, a (Ba, Sr)TiO3 film by chemical vapor deposition or atomic layer deposition.

摘要翻译： 本发明提供一种在室温至50℃处于液态的环戊二烯基锶化合物的含锶薄膜的形成方法，可以通过蒸馏纯化，作为单体存在，具有高的 蒸汽压力，适合批量生产。 使用双（丙基四甲基环戊二烯基）锶作为Sr源，通过化学气相沉积或原子层沉积形成SrTiO 3膜，（Ba，Sr）TiO 3膜等含锶的薄膜。

公开(公告)号：US20110210117A1

公开(公告)日：2011-09-01

申请号：US13040697

申请日：2011-03-04

申请人： Tomihiro Yonenaga ,  Yumiko Kawano

发明人： Tomihiro Yonenaga ,  Yumiko Kawano

IPC分类号： H05B6/10

CPC分类号： C23C16/46 ,  H01L21/67109 ,  H05B6/105 ,  H05B6/365 ,  H05B6/44

摘要： Provided is a heat treatment apparatus which, when simultaneously heating substrates placed on susceptors, is capable of controlling the uniformity of temperature within each substrate. The heat treatment apparatus includes: a reaction tube which performs predetermined treatment to wafers; a plurality of susceptors each of which has a mounting surface for mounting the wafer and is made of a conductive material; a rotatable quartz boat wherein the susceptors spaced apart in a direction perpendicular to the mounting surfaces are arranged and supported in the reaction tube; a magnetic field generating unit which is arranged on a sidewall of the processing chamber and includes a pair of electromagnets which generate an AC magnetic field in a direction parallel to the mounting surfaces of the susceptors and inductively heat the susceptors; and a control unit which controls the AC magnetic field generated by the magnetic field generating unit.

摘要翻译： 提供一种热处理装置，当同时加热放置在基座上的基板时，能够控制每个基板内的温度均匀性。 热处理装置包括：对晶片进行预定处理的反应管; 多个感受体具有用于安装晶片并由导电材料制成的安装表面; 一个可旋转的石英舟，其中在垂直于安装表面的方向间隔开的基座被布置和支撑在反应管中; 磁场产生单元，其布置在所述处理室的侧壁上，并且包括一对电磁体，所述一对电磁体在平行于所述基座的安装表面的方向上产生交流磁场并感应加热所述基座; 以及控制单元，其控制由磁场产生单元产生的交流磁场。

公开(公告)号：US20100015335A1

公开(公告)日：2010-01-21

申请号：US12529356

申请日：2008-02-27

申请人： Akinobu Kakimoto ,  Yumiko Kawano

发明人： Akinobu Kakimoto ,  Yumiko Kawano

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/404 ,  C23C16/405 ,  H01L21/3141 ,  H01L21/31691

摘要： A substrate is arranged in a processing chamber, the substrate is heated, and an Sr material, a Ti material and an oxidizing agent are introduced into the processing chamber in the form of gas, the gases are reacted on the heated substrate, and an SrTiO3 film is formed on the substrate. As the Sr material, an Sr amine compound or an Sr imine compound is used.

摘要翻译： 将衬底布置在处理室中，加热衬底，将Sr材料，Ti材料和氧化剂以气体形式引入处理室中，气体在加热的衬底上反应，并且将SrTiO 3 在基板上形成膜。 作为Sr材料，使用Sr胺化合物或Sr亚胺化合物。

公开(公告)号：US20090283038A1

公开(公告)日：2009-11-19

申请号：US12509872

申请日：2009-07-27

申请人： Isao Gunji ,  Yumiko Kawano

发明人： Isao Gunji ,  Yumiko Kawano

IPC分类号： C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/46

摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

摘要翻译： 一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。 通过重复上述处理，薄膜以层叠方式形成在基板上。