摘要:
The paste composition for an electrode includes metal particles having copper as a main component, glass particles including diphosphorus pentoxide and divanadium pentoxide and having a content of divanadium pentoxide of 1% by mass or more, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode.
摘要:
The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要:
An interface detecting circuit and interface detecting method are provided, whereby operations can be carried out depending on peripheral devices connected to USB terminals, and whereby the system can be simplified and software load can be reduced. A pull-down resistor is connected to an ID terminal of a Mini-A receptacle of a peripheral device, the voltage generated by the pull-down resistor, which is pulled down by the ID terminal of the Mini-A receptacle of the peripheral device, and a pull-up resistor, which is pulled up by the ID terminal of a Mini-B receptacle of a device, is detected in an analog fashion, using a detecting section comprised of comparators, and, via a logic section, a logic output is subjected to noise cancellation in a filter section and is memorized in a register section. The operations of other devices are determined according to the states memorized in the register section.
摘要:
There is provided an adhesive film for a semiconductor, comprising a thermoplastic resin (A), an epoxy resin (B) and a curing agent (C), wherein a minimum melt viscosity of said adhesive film for a semiconductor is 0.1 Pa·s to 500 Pa·s both inclusive in a temperature range of 50° C. to 180° C. both inclusive at a temperature-rise rate of 10° C./min from room temperature and a content of volatile component is 5.0% or less.
摘要:
From among high upland area determination data stored in a hard disk drive, only a portion corresponding to a required segmental region is read into an external memory along with traveling of a vehicle. Determining of a high upland area is then executed based on the portion of the high upland determination in the external storage device. When a high-upland division is present in a vicinity of a present position, a portion of the high upland area determination data is read into the external memory. The read portion of the high upland area determination data corresponds to a high upland area, which covers all the high-upland divisions adjacently existing starting from the high-upland division in the vicinity of the present position. When a high-upland division is not present in the vicinity of the present position, a portion of the high upland area determination data corresponding to a segmental region having a predetermined minimum range centering on the present position is read into the external memory.
摘要:
The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
摘要:
An escalator, having a pair of balustrades disposed on both sides of traveling steps, includes a balustrade end, a skirt end portion, and an indicator. The balustrade end is configured to turn back a handrail belt wound around each of the balustrades. The skirt end portion has a belt entrance port configured to receive the handrail belt, and an outer edge of the skirt end portion furthest away from the traveling steps extends further in an axial direction of the traveling steps than an inner edge of the skirt end portion closest to the traveling steps to guide items towards the traveling steps. The indicator is configured to indicate operating conditions of the escalator. A front face of the skirt end portion includes an inclined surface at a predetermined angle with a vertical plane. A display face of the indicator conforms to the inclination of the inclined surface.
摘要:
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
摘要翻译:本发明提供一种研磨剂,其包含含有介质的浆料,其中分散有i)至少一种,其中i) 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii)具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。
摘要:
In an image control system, with a reactive force on an input device that controls a pointer in a display, a bilateral communication of a pointing device can prevent a sense of discomfort while the system is used by an operator. When a screen image is switched from an image A to an image B, the pointing device activates the reactive force data for the image B after a predetermined amount of time based on the type or the amount of the image data of the screen image B. This enables the application of the reactive force for the image B in synchronization with generation of the screen image B, and thus gives an appropriate reactive force to the input portion of the pointing device when the screen images are being replaced from the image A to the image B.
摘要:
The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.