公开(公告)号：US5198370A

公开(公告)日：1993-03-30

申请号：US830852

申请日：1992-02-04

申请人： Yuji Ohkura ,  Tohru Takiguchi

发明人： Yuji Ohkura ,  Tohru Takiguchi

IPC分类号： H01L31/10 ,  H01L31/18

CPC分类号： H01L31/1832 ,  Y10S438/919 ,  Y10S438/971

摘要： In a method of producing an infrared detector, a first conductivity type semiconductor layer, in which lattice vacancies acting as first conductivity type carriers are formed by evaporation of an element during annealing, is formed on a substrate and dopant impurities producing a second conductivity type are diffused in an annealing step from the impurity layer into the first conductivity type semiconductor layer to form pixel regions. During the diffusion, the surface of the first conductivity type compound semiconductor layer corresponding to non-pixel regions is exposed. In the regions of the first conductivity type semiconductor layer which becomes non-pixel regions, the first conductivity type carrier concentration increases due to the lattice vacancies generated by the evaporation of an element and, even when the dopant impurity is diffused into these regions, these regions remain first conductivity type regions.

摘要翻译： 在制造红外线检测器的方法中，在基板上形成第一导电型半导体层，其中，作为第一导电型载流子的晶格空位由退火时的元素蒸发而形成，产生第二导电型的掺杂杂质为 在从杂质层到第一导电型半导体层的退火步骤中扩散以形成像素区域。 在扩散期间，暴露与非像素区对应的第一导电型化合物半导体层的表面。 在成为非像素区域的第一导电型半导体层的区域中，由于元素的蒸发产生的晶格空位，第一导电型载流子浓度增加，并且即使当掺杂剂杂质扩散到这些区域中时，这些 区域保持第一导电类型区域。

公开(公告)号：US08792756B2

公开(公告)日：2014-07-29

申请号：US13572753

申请日：2012-08-13

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： G02B6/12

CPC分类号： H01S5/026 ,  G02B6/122 ,  G02B6/4202 ,  G02B2006/121 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/2275

摘要： An optical semiconductor device includes an optical semiconductor element and an optical waveguide butt-joined to the optical semiconductor element. The optical semiconductor element has a mesa structure including an active layer and a burying layer coating side faces of the active layer. The optical waveguide has a mesa structure including an optical waveguide layer having a layer structure different from the active layer, and a burying layer coating side faces of the optical waveguide layer. Mesa width of the optical waveguide is narrower than mesa width of the optical semiconductor element.

摘要翻译： 光半导体器件包括光半导体元件和与该光半导体元件对接的光波导。 光学半导体元件具有包括有源层和覆盖层的台面结构，该掩埋层涂覆有源层的侧面。 光波导具有包括具有不同于有源层的层结构的光波导层的台面结构，以及涂覆光波导层的侧面的掩埋层。 光波导的台面宽度比光半导体元件的台面宽度窄。

公开(公告)号：US06618411B1

公开(公告)日：2003-09-09

申请号：US09632908

申请日：2000-08-04

申请人： Tohru Takiguchi ,  Kyosuke Kuramoto

发明人： Tohru Takiguchi ,  Kyosuke Kuramoto

IPC分类号： H01S319

CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/2063 ,  H01S5/209

摘要： A ridge waveguide semiconductor laser that is excellent in optical output characteristic and high-frequency characteristic is provided. A p-type InP cladding layer having a ridge shape is formed over a p-type AlInAs cladding layer via a p-type InP layer and a p-type GaInAsP etching stopper layer, thereby suppressing the increase in the series resistance due to discontinuous band structure between an etching stopper layer and the AlGaInAs cladding layer and reducing the threshold current of the laser. Also the InP cladding layer is formed in a ridge shape with the portion near the base thereof being splayed like a skirt, thereby keeping the p-type metal electrode from the light emitting region and suppressing the absorption loss of light due to the p-type metal electrode. Further, by increasing the resistance of the active layers in the region that interposes a main current path, parasitic capacitance formed by the active layer in the region where current does not flow can be decreased thereby improving the high-frequency characteristic of the laser.

摘要翻译： 提供了具有优异的光输出特性和高频特性的脊波导半导体激光器。 通过p型InP层和p型GaInAsP蚀刻阻挡层在p型AlInAs覆盖层上形成具有脊形的p型InP覆盖层，由此抑制由于不连续带导致的串联电阻的增加 蚀刻停止层与AlGaInAs覆层之间的结构，并且降低激光器的阈值电流。 此外，InP包层形成为脊状，其基部附近的部分像裙部一样地露出，从而保持p型金属电极不受发光区域的影响，并且抑制由于p型而导致的光的吸收损失 金属电极。 此外，通过增加插入主电流路径的区域中的有源层的电阻，可以减小由有源层在电流不流动的区域形成的寄生电容，从而提高激光器的高频特性。

公开(公告)号：US5452383A

公开(公告)日：1995-09-19

申请号：US188233

申请日：1994-01-28

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： G02F1/017 ,  G02F1/313 ,  H01S5/026 ,  H01S5/227 ,  H01S5/343 ,  H01S5/50 ,  H04Q3/52 ,  G02B6/10 ,  H01L21/70 ,  H01L27/12

CPC分类号： B82Y20/00 ,  G02F1/3138 ,  H01S5/50 ,  G02F1/01708 ,  H01S5/026 ,  H01S5/2272 ,  H01S5/34306 ,  H01S5/3434

摘要： An optical switch includes a semiconductor substrate having a surface, a ridge waveguide disposed on the surface of the semiconductor substrate and including an optical waveguide layer having an MQW structure, first and second cladding layers sandwiching the optical waveguide layer, and a switch disposed in a part of the ridge waveguide. A part of the MQW optical waveguide layer included in the switch is thicker than the other part of the optical waveguide layer, whereby the energy band gap of the optical waveguide layer of the switch is smaller than the energy band gap of the other part of the optical waveguide layer and larger than the energy of the signal light. Therefore, the absorption loss of the signal light traveling through the optical waveguide layer is reduced. Furthermore, since the variation in the refractive index of the switch when current is applied to the switch is increased, the ON/OFF ratio of the switch is increased.

摘要翻译： 一种光开关包括具有表面的半导体衬底，设置在半导体衬底的表面上的脊波导，并且包括具有MQW结构的光波导层，夹着光波导层的第一和第二覆层以及设置在该光波导层中的开关 脊波导的一部分。 包含在开关中的MQW光波导层的一部分比光波导层的另一部分厚，由此开关的光波导层的能带隙比其他部分的能带隙小 光波导层和大于信号光的能量。 因此，通过光波导层传播的信号光的吸收损耗降低。 此外，由于当电流施加到开关时开关的折射率的变化增加，所以开关的开/关比增加。

公开(公告)号：US5187378A

公开(公告)日：1993-02-16

申请号：US739507

申请日：1991-08-02

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： H01L31/10 ,  H01L31/103 ,  H01L31/18

CPC分类号： H01L31/1032 ,  H01L31/1035 ,  H01L31/1832

摘要： A photodetector includes a compound semiconductor substrate including first and second elements and having a first energy band gap, a first conductivity type compound semiconductor light absorbing layer including at least one of the first and second elements and having a second energy band gap narrower than the first energy band gap, a transition layer having an energy band gap at least as wide as the second energy band gap and no wider than the first energy band gap disposed between and contacting the substrate and the light absorbing layer, at least a first recess extending through the substrate and the transition layer to the light absorbing layer, a second conductivity type region disposed in the light absorbing layer at the first recess, a first electrode disposed in the first recess in contact with the second conductivity type region, and a second electrode disposed in contact with the first conductivity type light absorbing layer.

摘要翻译： 光电检测器包括包括第一和第二元件并具有第一能带隙的化合物半导体衬底，第一导电类型化合物半导体光吸收层，其包括第一和第二元件中的至少一个，并且具有比第一能带窄的第一能带隙 能带隙，具有至少与第二能带隙一样宽的能带隙的过渡层，并且不比设置在衬底和光吸收层之间并接触衬底和光吸收层之间的第一能带隙宽，至少延伸穿过第一凹槽 所述基板和到所述光吸收层的过渡层，设置在所述第一凹部处的所述光吸收层中的第二导电类型区域，设置在与所述第二导电类型区域接触的所述第一凹部中的第一电极和设置在所述第二凹部中的第二电极 与第一导电型光吸收层接触。

公开(公告)号：US20140056556A1

公开(公告)日：2014-02-27

申请号：US13832559

申请日：2013-03-15

申请人： Yoshifumi Sasahata ,  Tohru Takiguchi ,  Keisuke Matsumoto ,  Masakazu Takabayashi

发明人： Yoshifumi Sasahata ,  Tohru Takiguchi ,  Keisuke Matsumoto ,  Masakazu Takabayashi

IPC分类号： F21V8/00

CPC分类号： G02B6/0001 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/2813 ,  G02B2006/1215 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/227 ,  H01S5/34306 ,  H01S5/4031

摘要： An optical semiconductor device includes: semiconductor lasers separated into two groups; an optical coupler combining light output from the semiconductor lasers; an optical amplifier amplifying light output from the optical coupler; and waveguides respectively connecting the semiconductor lasers to the optical coupler. Each of the waveguides includes a respective bent waveguide. The bent waveguides have the same radius of curvature.

摘要翻译： 光学半导体器件包括：分成两组的半导体激光器; 组合来自半导体激光器的光输出的光耦合器; 放大从光耦合器输出的光的光放大器; 以及分别将半导体激光器连接到光耦合器的波导管。 每个波导包括相应的弯曲波导。 弯曲的波导具有相同的曲率半径。

公开(公告)号：US08233515B2

公开(公告)日：2012-07-31

申请号：US12713215

申请日：2010-02-26

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/026 ,  G02B6/12004 ,  G02B2006/12078 ,  H01L21/02538 ,  H01L21/0262 ,  H01S5/2218 ,  H01S5/2275

摘要： An optical waveguide integrated semiconductor optical device includes a laser and an optical waveguide. The laser includes an active layer and a first cladding layer which are stacked on a second cladding layer. The optical waveguide includes an optical guiding layer and an undoped InP layer which are also stacked on the second cladding layer. A high resistance layer is located between the top surface of the optical guiding layer and a surface of the undoped InP layer and between a side of the first cladding layer and a side of the undoped InP layer.

摘要翻译： 光波导集成半导体光学器件包括激光器和光波导。 激光器包括层叠在第二覆层上的有源层和第一覆层。 光波导包括也被层叠在第二覆层上的光引导层和未掺杂的InP层。 高电阻层位于光导层的顶表面和未掺杂的InP层的表面之间，并且位于第一包层的一侧和未掺杂的InP层的一侧之间。

公开(公告)号：US20090290611A1

公开(公告)日：2009-11-26

申请号：US12198152

申请日：2008-08-26

申请人： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

发明人： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

IPC分类号： H01S5/00 ,  H01L21/02

CPC分类号： H01S5/227 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2275

摘要： A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.

摘要翻译： 半导体激光器包括：包括彼此堆叠的p型覆层，有源层和n型覆层的脊结构; 以及埋藏在山脊结构侧面的埋藏层。 掩埋层包括形成pn结的p型半导体层和n型半导体层; p型半导体层和n型半导体层中的一方在pn结附近具有5×10 17 cm -3以下的载流子浓度。

公开(公告)号：US06455338B1

公开(公告)日：2002-09-24

申请号：US09400531

申请日：1999-09-21

申请人： Kazuhisa Takagi ,  Hitoshi Tada ,  Tohru Takiguchi

发明人： Kazuhisa Takagi ,  Hitoshi Tada ,  Tohru Takiguchi

IPC分类号： H01L2120

CPC分类号： H01S5/0265 ,  H01S5/2077 ,  H01S5/2081

摘要： An integrated semiconductor laser-modulator device less affected by a fluctuating electric field due to modulating signals applied to the modulator has improved frequency characteristics. The integrated semiconductor laser-modulator includes an active layer, a beam waveguide layer having a bulk structure with a bandgap energy larger than that of the active layer but smaller than that of a laser beam absorption layer having a bulk structure, wherein waveguides of the laser and modulator are connected and aligned, and a cladding layer including a diffraction grating is disposed on top of or beneath the waveguides.

摘要翻译： 由于施加到调制器的调制信号而受波动电场影响较小的集成半导体激光调制器具有改善的频率特性。 集成半导体激光调制器包括有源层，具有体积结构的波导波导层，其带隙能量大于有源层的带隙能量，但小于具有体结构的激光束吸收层的带隙能量，其中激光波导 并且调制器被连接和对准，并且包括衍射光栅的包层设置在波导的顶部或下方。

公开(公告)号：US5671242A

公开(公告)日：1997-09-23

申请号：US515909

申请日：1995-08-16

申请人： Tohru Takiguchi ,  Katsuhiko Goto

发明人： Tohru Takiguchi ,  Katsuhiko Goto

IPC分类号： H01L21/20 ,  G02F1/017 ,  H01S5/00 ,  H01S5/026 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01S5/0265 ,  H01S5/34 ,  G02F2001/01766 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

摘要： A semiconductor device includes a substrate having a lattice constant and a stress compensation strained quantum well layer including compressively strained layers having a lattice constant larger than the lattice constant of the substrate and tensively strained layers having a lattice constant smaller than the lattice constant of the substrate which are alternatingly laminated on the substrate, wherein the average strain of the stress compensation strained quantum well layer is a positive quantity. Therefore, the critical thickness of the strained quantum well layer is increased so that the degree of freedom in designing the strained quantum well layer is increased, resulting in a semiconductor device with improved characteristics.

摘要翻译： 半导体器件包括具有晶格常数的衬底和应力补偿应变量子阱层，其包括具有大于衬底的晶格常数的晶格常数的压缩应变层和具有小于衬底的晶格常数的晶格常数的紧张应变层 其交替层压在基板上，其中应力补偿应变量子阱层的平均应变为正量。 因此，应变量子阱层的临界厚度增加，使得应变量子阱层的设计自由度增加，导致具有改进特性的半导体器件。