CAPACITOR AND INDUCTOR EMBEDDED STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND SUBSTRATE

    公开(公告)号:US20230197739A1

    公开(公告)日:2023-06-22

    申请号:US17998159

    申请日:2020-07-24

    CPC classification number: H01L27/13 H01L28/10 H01L28/40

    Abstract: A capacitor and inductor embedded structure and a manufacturing method therefor, and a substrate are disclosed. The method includes: providing a metal plate; sequentially depositing and etching a first protective layer, a thin film dielectric layer, a second protective layer, and an upper electrode layer on an upper surface of the metal plate to form a thin film capacitor and a capacitor upper electrode; pressing an upper dielectric layer to the upper surface of the metal plate, covering the thin film capacitor and the capacitor upper electrode, and etching the metal plate to form a capacitor lower electrode; pressing a lower dielectric layer to a lower surface of the metal plate, and performing drilling on the upper dielectric layer and the lower dielectric layer to form inductor through holes and capacitor electrode through holes; electroplating metal to form an inductor and circuit layers.

    METHOD FOR MANUFACTURING HIGH-HEAT-DISSIPATION MIXED SUBSTRATE, AND SEMICONDUCTOR STRUCTURE

    公开(公告)号:US20240079287A1

    公开(公告)日:2024-03-07

    申请号:US18453185

    申请日:2023-08-21

    CPC classification number: H01L23/367 H01L21/4857 H01L21/4871

    Abstract: A method for manufacturing a high-heat-dissipation mixed substrate includes: preparing a mother substrate, the mother substrate including an insulating layer and a temporary carrier plate which are laminated; arranging a plurality of first grooves and a plurality of first cavities on the mother substrate; filling the first groove with a thermally-conductive material to form a first thermally-conductive block, and adhering an embedded device in the first cavity and filling the first cavity with the thermally-conductive material to form a second thermally-conductive block; removing the temporary carrier plate to obtain a semi-finished substrate; manufacturing circuit layers on two opposite side surfaces of the semi-finished substrate to obtain a target mother substrate; and cutting the target mother substrate along region dividing lines to obtain a mixed substrate with a side surface being a thermally-conductive surface.

    METHOD FOR MANUFACTURING A PACKAGING SUBSTRATE, AND PACKAGING SUBSTRATE

    公开(公告)号:US20230232545A1

    公开(公告)日:2023-07-20

    申请号:US18145349

    申请日:2022-12-22

    CPC classification number: H05K3/4644 H05K1/185 H05K3/0047 H05K3/4697

    Abstract: A method for manufacturing a packaging substrate, and a packaging substrate are disclosed. The method includes: providing a bottom board with a first circuit layer, the first circuit layer being provided with at least one demand point, and one side of the demand point being provided with a first to-be-avoided region; machining a first intermediate insulating layer on the bottom board, the first intermediate insulating layer including a first intermediate insulating dielectric covering the first to-be-avoided region; machining a first intermediate wiring layer on the first intermediate insulating layer, the first intermediate wiring layer including a first intermediate circuit partially arranged on the first intermediate insulating dielectric and connected to the demand point; machining a first insulating layer on the first intermediate wiring layer which is stacked on the bottom board and covers the first intermediate wiring layer; and machining a circuit build-up layer on the first insulating layer.

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