Abstract:
Disclosed is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.
Abstract:
Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.
Abstract:
Computer-implemented methods, carrier media, and systems for detecting defects on a wafer based on multi-core architecture are provided. One computer-implemented method for detecting defects on a wafer includes acquiring output for the wafer generated by an inspection system. Dies are formed on the wafer, and multiple cores are formed in the dies. The method also includes detecting defects on the wafer by comparing the output for a first of the multiple cores to the output for a second of the multiple cores. The first and second of the multiple cores are formed in the same die, different dies, or the same die and different dies.
Abstract:
Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.
Abstract:
Accordingly, the present invention provides methods and apparatus for performing a darkfield inspection on a specimen having periodic structures thereon while substantially reducing or eliminating the long range ringing response, which is typically produced by a traditional Fourier filter mask used to eliminate the diffraction caused by the periodic structures. In one embodiment, an apparatus for inspecting a specimen by detecting optical beams scattered from the specimen. The apparatus includes a beam generator for providing and directing an incident beam towards a specimen and an array subtraction device for substantially subtracting a periodic component from an output beam scattered from the specimen in response to the incident beam. The periodic component corresponds to at least one periodic structure on the specimen, and the subtraction is performed so as to substantially reduce or eliminate a ringing response from the output beam. The subtraction is also performed so as to substantially prevent subtracting any actual defect components from the output beam. The apparatus further includes a detector for receiving the output beam and generating an output image or signal based on the output beam.
Abstract:
Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.
Abstract:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to lithography. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
Abstract:
Fourier filters and wafer inspection systems are provided. One embodiment relates to a one-dimensional Fourier filter configured to be included in a bright field inspection system such that the bright field inspection system can be used for broadband dark field inspection of a wafer. The Fourier filter includes an asymmetric illumination aperture configured to be positioned in an illumination path of the inspection system. The Fourier filter also includes an asymmetric imaging aperture complementary to the illumination aperture. The imaging aperture is configured to be positioned in a light collection path of the inspection system such that the imaging aperture blocks light reflected and diffracted from structures on the wafer and allows light scattered from defects on the wafer to pass through the imaging aperture.
Abstract:
In one embodiment, an atomic force microscope comprises a frame, a beam coupled to the frame at a first end and a second end, a probe mounted to the beam, means for inducing relative motion between the beam and an underlying surface, and means for detecting a characteristic of the beam.
Abstract:
Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.