Light emitting semiconductor method and device
    11.
    发明授权
    Light emitting semiconductor method and device 有权
    发光半导体方法及器件

    公开(公告)号:US06946685B1

    公开(公告)日:2005-09-20

    申请号:US09652194

    申请日:2000-08-31

    IPC分类号: H01L29/22 H01L33/32 H01L33/40

    CPC分类号: H01L33/405 H01L33/32

    摘要: Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.

    摘要翻译: 发光器件中的银电极金属化在水分和电场的存在下经历电化学迁移。 银金属化物到器件的pn结的电化学迁移导致跨接头的交替分流路径,这降低了器件的效率。 根据本发明的形式,提供了一种迁移屏障,用于防止金属从至少一个电极移动到与电极接触的半导体层的表面上。

    III-nitride light-emitting devices with improved high-current efficiency
    13.
    发明授权
    III-nitride light-emitting devices with improved high-current efficiency 有权
    具有改善的高电流效率的III族氮化物发光器件

    公开(公告)号:US06943381B2

    公开(公告)日:2005-09-13

    申请号:US10769590

    申请日:2004-01-30

    IPC分类号: H01L33/00 H01L33/32

    CPC分类号: H01L33/32

    摘要: A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.

    摘要翻译: 发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层,其厚度超过III-氮化物层中的应变松弛的临界厚度。 例如,III-氮化物层可以是载流子限制层。 在本发明的另一方面中,一种发光半导体器件包括III族氮化物发光层,In-Al 2 O 3,Ga 1-xy, SUB> N(0 <= x <= 1,0,0 <= y <= 1,x + y <= 1),以及插入发光层和In < 1&lt; 1&gt; Ga 1-xy N层。 间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。 可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度,从而提高器件发光的效率。

    Light emitting devices with compact active regions

    公开(公告)号:US06900474B2

    公开(公告)日:2005-05-31

    申请号:US10632720

    申请日:2003-07-31

    摘要: A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.

    Backlight, liquid crystal apparatus comprising such a backlight, and method of operating such an apparatus
    16.
    发明申请
    Backlight, liquid crystal apparatus comprising such a backlight, and method of operating such an apparatus 审中-公开
    背光源,包括这种背光的液晶装置以及操作这种装置的方法

    公开(公告)号:US20040252255A1

    公开(公告)日:2004-12-16

    申请号:US10801807

    申请日:2004-03-15

    发明人: Wiepke Folkerts

    IPC分类号: G02F001/1335

    CPC分类号: G02F1/133615

    摘要: A structure that may be used as a backlight for a liquid crystal display includes a light source and an optical waveguide. The optical waveguide is illuminated by the light source from an edge of the optical waveguide. The optical waveguide has a plurality of adjacent areas for illuminating corresponding parts of a liquid crystal panel. Each of the areas is provided with an independently controllable light source for illuminating the area.

    摘要翻译: 可以用作液晶显示器的背光源的结构包括光源和光波导。 光波导由光波导从光波导的边缘照射。 光波导具有用于照射液晶面板的相应部分的多个相邻区域。 每个区域设置有用于照亮该区域的独立可控的光源。

    Illumination system and display device
    17.
    发明申请
    Illumination system and display device 失效
    照明系统和显示设备

    公开(公告)号:US20040227869A1

    公开(公告)日:2004-11-18

    申请号:US10810169

    申请日:2004-03-25

    IPC分类号: G02F001/1335

    摘要: A backlight illumination system for illuminating a large area with light of a uniform color has a set of a pre-determined number of light emitters arranged along a straight line. The set is divided in a plurality of subsets, each subset including at least two light emitters. Each subset comprises light emitters with substantially the same light-emission color point, the respective subsets having color points different from each other. As a first step, the light emitters of the subset with a smallest number of light emitters are assigned to respective substantially equidistant positions. The light emitters of the set are assigned to the respective positions by iteratively starting with the subset with the smallest number of light emitters, assigning the light emitters of the subset to substantially equidistant positions which are not yet occupied. The backlight illumination system according to the invention has a uniform light and color distribution.

    摘要翻译: 用于以均匀颜色的光照射大面积的背光照明系统具有沿着直线布置的一组预定数量的发光体。 该组被分成多个子集,每个子​​集包括至少两个发光器。 每个子集包括具有基本上相同的发光色点的发光体,各个子集具有彼此不同的色点。 作为第一步骤,具有最少数量的发光体的子集的发光体被分配到相应的基本上等距的位置。 通过以具有最少数量的发光体的子集反复地开始,将集合的发光体分配给各个位置,将子集的发光体分配给尚未被占用的基本上等距离的位置。 根据本发明的背光照明系统具有均匀的光和颜色分布。

    Circuit arrangement
    19.
    发明申请
    Circuit arrangement 有权
    电路布置

    公开(公告)号:US20040130518A1

    公开(公告)日:2004-07-08

    申请号:US10684066

    申请日:2003-10-09

    IPC分类号: G09G003/32

    摘要: In a circuit arrangement for driving a LED array comprising red, green and blue LEDs, a control loop is added for limiting the duty cycles of the control signals for driving the red, green and blue LEDs. In case one of the duty cycles reaches the limit value, the reference signals for the red, green and blue light are decreased with the same relative amount. The color point of the light is thereby maintained, even when the efficiency of part of the LEDs decreases.

    摘要翻译: 在用于驱动包括红色,绿色和蓝色LED的LED阵列的电路装置中,添加了控制环路,用于限制用于驱动红色,绿色和蓝色LED的控制信号的占空比。 在一个占空比达到极限值的情况下,红色,绿色和蓝色光的参考信号以相同的相对量减少。 因此,即使当部分LED的效率降低时,光的色点也被保持。

    Light emitting diodes with graded composition active regions
    20.
    发明申请
    Light emitting diodes with graded composition active regions 失效
    具有分级组成活性区的发光二极管

    公开(公告)号:US20030020085A1

    公开(公告)日:2003-01-30

    申请号:US09912589

    申请日:2001-07-24

    IPC分类号: H01L033/00

    CPC分类号: H01L33/32 H01L33/06

    摘要: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

    摘要翻译: 根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。 有源区包括作为量子阱层或阻挡层的第二半导体层。 第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。 发光器件还包括形成在有源区上的第二导电类型的第三半导体层。