公开(公告)号：US07279689B2

公开(公告)日：2007-10-09

申请号：US11181659

申请日：2005-07-13

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: A61N5/00

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US20060113474A1

公开(公告)日：2006-06-01

申请号：US11331222

申请日：2006-01-13

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

IPC: G21K7/00 ,  G01N23/00

CPC classification number: H01J37/244 ,  G01N23/225 ,  G01R31/307 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/0535 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/24585 ,  H01J2237/24592 ,  H01J2237/281 ,  H01J2237/2817

Abstract: A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.

公开(公告)号：US07049591B2

公开(公告)日：2006-05-23

申请号：US11016849

申请日：2004-12-21

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

IPC: H01J37/20

CPC classification number: H01J37/244 ,  G01N23/225 ,  G01R31/307 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/0535 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/24585 ,  H01J2237/24592 ,  H01J2237/281 ,  H01J2237/2817

Abstract: A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.

公开(公告)号：US07019292B1

公开(公告)日：2006-03-28

申请号：US10869588

申请日：2004-06-15

Applicant: Frank Y. H. Fan ,  David L. Adler ,  Kirk J. Bertsche ,  Luca Grella

Inventor： Frank Y. H. Fan ,  David L. Adler ,  Kirk J. Bertsche ,  Luca Grella

IPC: H01J37/256

CPC classification number: H01J37/05 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/281 ,  H01J2237/2817 ,  H01L22/14

Abstract: One embodiment disclosed relates to a method for robustly detecting a defective high aspect ratio (HAR) feature. A surface area of a semiconductor specimen with HAR features thereon is charged up, and a primary beam is impinged onto the surface area. Scattered electrons that are generated due to the impingement of the primary beam are extracted from the surface area. An energy filter is applied to remove the scattered electrons with lower energies, and the filtered electrons are detected. Image data is generated from the detected electrons, and an intensity threshold is applied to the image data.

Abstract translation: 公开的一个实施例涉及用于鲁棒地检测有缺陷的高纵横比（HAR）特征的方法。 其上具有HAR特征的半导体样品的表面积被充电，并且主光束撞击到表面区域。 从表面区域提取由于主光束的撞击而产生的分散电子。 应用能量滤波器去除具有较低能量的散射电子，并且检测滤波电子。 从检测到的电子生成图像数据，并且将强度阈值应用于图像数据。

公开(公告)号：US20050173657A1

公开(公告)日：2005-08-11

申请号：US11051339

申请日：2005-02-03

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas Hegedus

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/66 ,  H01L23/544

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US06653633B2

公开(公告)日：2003-11-25

申请号：US10356498

申请日：2003-02-03

Applicant: Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

Inventor： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

IPC: H01J3726

CPC classification number: G06T5/002 ,  G06T5/003 ,  G06T5/20 ,  G06T5/50 ,  G06T7/13 ,  G06T7/62 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/21 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Abstract translation: 本发明的目的是获得一种聚焦于样品的所有部分的图像，并提供一种能够获得在整个样品上没有模糊部分的二维图像的带电粒子束装置。 为了实现上述目的，本发明包括用于改变从带电粒子源发射的带电粒子束的聚焦条件的装置，用于检测从所述样品的表面部分照射的带电粒子的带电粒子检测器， 发射的带电粒子束，以及用于根据所述带电粒子束聚焦的信号来构成表面部分的二维图像的装置，所述信号在从带电粒子检测器输出的信号中。

公开(公告)号：US06538249B1

公开(公告)日：2003-03-25

申请号：US09612302

申请日：2000-07-07

Applicant: Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

Inventor： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

IPC: H01J3726

CPC classification number: G06T5/002 ,  G06T5/003 ,  G06T5/20 ,  G06T5/50 ,  G06T7/13 ,  G06T7/62 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/21 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Abstract translation: 本发明的目的是获得一种聚焦于样品的所有部分的图像，并提供一种能够获得在整个样品上没有模糊部分的二维图像的带电粒子束装置。 为了实现上述目的，本发明包括用于改变从带电粒子源发射的带电粒子束的聚焦条件的装置，用于检测从所述样品的表面部分照射的带电粒子的带电粒子检测器， 发射的带电粒子束，以及用于根据所述带电粒子束聚焦的信号来组合表面部分的二维图像的装置，所述信号是从带电粒子检测器输出的信号。

公开(公告)号：US5866904A

公开(公告)日：1999-02-02

申请号：US970201

申请日：1997-11-14

Applicant: Hideo Todokoro ,  Kenji Takamoto ,  Tadashi Otaka ,  Fumio Mizuno ,  Satoru Yamada ,  Sadao Terakado ,  Katsuhiro Kuroda ,  Ken Ninomiya ,  Tokuo Kure

Inventor： Hideo Todokoro ,  Kenji Takamoto ,  Tadashi Otaka ,  Fumio Mizuno ,  Satoru Yamada ,  Sadao Terakado ,  Katsuhiro Kuroda ,  Ken Ninomiya ,  Tokuo Kure

IPC: G01Q30/02 ,  G01B15/00 ,  G01B15/04 ,  G01Q30/04 ,  H01J37/26

CPC classification number: G01B15/00 ,  G01B15/04 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/281

Abstract: An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A cubic model is assumed, the cubic model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified cubic model.

公开(公告)号：US20170169558A1

公开(公告)日：2017-06-15

申请号：US15291590

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Soo KIM ,  Jin Kwan KIM ,  Chung Sam JUN ,  Yu sin YANG ,  Soo Seok LEE

IPC: G06T7/00 ,  H01J37/28 ,  G01Q30/02 ,  G06T7/50 ,  G06K9/46

CPC classification number: G06T7/0004 ,  G01Q30/02 ,  G06K9/4604 ,  G06T7/41 ,  G06T7/50 ,  G06T7/529 ,  G06T2207/10028 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/225 ,  H01J2237/281

Abstract: A 3D profiling system of a semiconductor chip is provided and includes a storage unit that receives scanning electron microscope (SEM) images of a plurality of semiconductor devices having respective data with respect to a plurality of different components and gray levels of each SEM image. An extraction unit that performs principal component analysis (PCA) on the gray level of the SEM image and separates principal components from among the plurality of different components is also part of the system. Additionally, a calculation unit receives provision of actually measured values of the plurality of semiconductor devices, and applies a multiple linear regression to the principal components based on the measured values to complete a 3D profile of the semiconductor chip.

公开(公告)号：US09644955B2

公开(公告)日：2017-05-09

申请号：US14364392

申请日：2012-11-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Tasuku Yano ,  Yasunari Sohda ,  Muneyuki Fukuda ,  Katsunori Onuki ,  Hajime Kawano ,  Naomasa Suzuki

IPC: H01J37/28 ,  G01B15/00 ,  H01J37/21 ,  H01L21/66 ,  H01J37/244

CPC classification number: G01B15/00 ,  G01B2210/56 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/281 ,  H01L22/12

Abstract: A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.