公开(公告)号：US10014473B2

公开(公告)日：2018-07-03

申请号：US15288420

申请日：2016-10-07

申请人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Heung Cho Ko ,  Jongwon Yoon ,  Yunkyung Jeong ,  Seonggwang Yoo ,  Heeje Kim ,  Youngkyu Hwang

IPC分类号： H01L51/00 ,  B32B5/02 ,  B41M5/382

CPC分类号： H01L51/0013 ,  B32B5/024 ,  B32B2262/02 ,  B41M5/382 ,  H01L51/0015 ,  H01L51/0016 ,  H01L51/0017 ,  H01L51/0023 ,  H01L51/0097 ,  Y02E10/549

摘要： The present disclosure relates a method for transfer printing of an electronic device comprising: forming a sacrificial layer on a handling substrate; forming a protective layer on the sacrificial layer; forming a polymer substrate on the protective layer; forming a pattern on the polymer substrate, and forming a ciliary adhesive rod on the sides of the polymer substrate; forming a supportive layer on the polymer substrate on which the adhesive rod is formed; and removing the sacrificial layer and the protective layer, and transfer printing the electronic device onto an object to-be-printed, while dissolving the to supportive layer.

公开(公告)号：US20180159056A1

公开(公告)日：2018-06-07

申请号：US15817534

申请日：2017-11-20

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： YU-DAN ZHAO ,  YU-JIA HUO ,  XIAO-YANG XIAO ,  YING-CHENG WANG ,  TIAN-FU ZHANG ,  YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L51/05 ,  H01L29/786 ,  H01L21/285 ,  H01L27/12 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L51/0558 ,  H01L21/2855 ,  H01L27/0688 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0023 ,  H01L51/0026 ,  H01L51/0048 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/055 ,  H03K19/094

摘要： The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.

公开(公告)号：US09991472B2

公开(公告)日：2018-06-05

申请号：US15497654

申请日：2017-04-26

申请人： SEIKO EPSON CORPORATION

发明人： Takeshi Koshihara

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32

CPC分类号： H01L51/5265 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3276 ,  H01L27/3297 ,  H01L51/0023 ,  H01L51/5203 ,  H01L51/5218 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/308

摘要： There is provided an electro-optical apparatus including an element substrate that includes a display region in which a plurality of light-emitting elements are arranged, and a peripheral region in which a terminal is disposed. The light-emitting element has a structure in which a reflective electrode, an optical adjustment layer, a first electrode, a light-emitting layer, and a second electrode are laminated, and the first electrode is electrically connected to a contact electrode. The terminal has a structure in which a first terminal layer that is formed by a first conductive film which is the same as the reflective electrode, a second terminal layer that is formed by a second conductive film which is the same as the contact electrode, and a third terminal layer that is formed by a third conductive film which is the same as the first electrode are laminated.

公开(公告)号：US20180151830A1

公开(公告)日：2018-05-31

申请号：US15816371

申请日：2017-11-17

申请人： CANON KABUSHIKI KAISHA

发明人： Mariko Furuta ,  Nobutaka Ukigaya

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L51/5218 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/0023 ,  H01L51/5209 ,  H01L51/5225 ,  H01L51/5234 ,  H01L2227/323 ,  H01L2251/5315

摘要： A display device includes an electrode structure including a first electrode arranged on a substrate and a member arranged on the first electrode, an insulator configured to cover a peripheral portion of the electrode structure, an organic film configured to cover the first electrode and the insulator, and a second electrode configured to cover the organic film. The member includes a first portion arranged in the peripheral portion of the electrode structure so as to cover a peripheral portion of an upper face of the first electrode, and a reflectance of the peripheral portion of the electrode structure is lower than a reflectance of a central portion that is a portion inside the peripheral portion of the electrode structure.

公开(公告)号：US20180151668A1

公开(公告)日：2018-05-31

申请号：US15362191

申请日：2016-11-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Michael Engel ,  Mathias B. Steiner ,  Jaione Tirapu Azpiroz

IPC分类号： H01L29/06 ,  H01L29/41 ,  H01L29/16 ,  H01L51/10 ,  H01L51/00 ,  H01L21/02

CPC分类号： H01L21/02376 ,  B82Y40/00 ,  H01L51/0023 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/102 ,  Y10S977/742

摘要： A method of positioning nanomaterials that includes forming a set of electrodes on a substrate, and covering the electrodes and substrate with a single layer of guiding dielectric material. The method may continue with patterning the guiding dielectric to provide dielectric guide features, wherein an exposed portion of the substrate between the dielectric guide features provides a deposition surface. A liquid medium containing at least one nanostructure is applied to the guiding dielectric features and the deposition surface. An electric field produced by the electrodes that is attenuated by the dielectric guide features creates an attractive force that guides the nanostructures to the deposition surface.

公开(公告)号：US20180108843A1

公开(公告)日：2018-04-19

申请号：US15654149

申请日：2017-07-19

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Bon Yong KOO ,  Young Wan SEO

IPC分类号： H01L51/00 ,  H01L51/05 ,  G02F1/1335

CPC分类号： H01L51/0023 ,  G02F1/133512 ,  H01L27/1108 ,  H01L27/124 ,  H01L29/78633 ,  H01L51/0097 ,  H01L51/0512

摘要： The display device includes a first base portion; a semiconductor layer disposed on the first base portion and including a source region, a drain region and a channel region; a first insulating layer disposed on the semiconductor layer; a gate line disposed on the first insulating layer extending in a first direction and overlapping the channel region; a second insulating layer disposed on the gate line; a first connection plug formed in the first and second insulating layer filling a first connection hole exposing the source region; a second connection plug formed in the first and second insulating layer filling a second connection hole exposing the drain region; a first and second conductive pattern disposed on the second insulating layer; a pixel electrode disposed on the second insulating layer and electrically connected to the first conductive pattern; and a data line disposed on the second insulating layer to extend in a second direction.

公开(公告)号：US09935290B2

公开(公告)日：2018-04-03

申请号：US15591361

申请日：2017-05-10

申请人： BOE Technology Group Co., Ltd.

发明人： Hongfei Cheng ,  Yuxin Zhang

IPC分类号： H01L51/56 ,  H01L51/52 ,  H01L27/32 ,  H01L51/00

CPC分类号： H01L51/5259 ,  H01L27/322 ,  H01L27/3251 ,  H01L27/3262 ,  H01L51/0023 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323

摘要： Embodiments of the disclosure disclose an electroluminescence display device and a fabrication method thereof. The device comprises a color filter substrate. The color filter substrate comprises: a first substrate, and a first electrode, an organic electroluminescence layer and a second electrode sequentially provided on the first substrate. The color filter substrate further comprises: a first protective layer, provided on the second electrode and covering the second electrode and the organic electroluminescence layer below the second electrode; and a first connection electrode, provided on the first protective layer and connected to the second electrode.

公开(公告)号：US09917268B1

公开(公告)日：2018-03-13

申请号：US15480355

申请日：2017-04-05

申请人： E Ink Holdings Inc.

发明人： Hsiao-Wen Zan ,  Shao-Fu Peng ,  Cheng-Hang Hsu

IPC分类号： H01L27/148 ,  H01L29/80 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/336 ,  H01L51/05 ,  H01L51/10 ,  H01L51/00

CPC分类号： H01L51/0508 ,  H01L51/0012 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/107

摘要： A method of forming a transistor includes: forming a stack structure including a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer on a substrate; patterning the first insulating layer, the second conductive layer, and the second insulating layer to form at least one opening passing through the first insulating layer, the second conductive layer, and the second insulating layer; forming a semiconductor layer over the second insulating layer and filling the opening; removing the portion of the semiconductor layer over the second insulating layer, in which the portion of the semiconductor layer filled in the opening constitutes at least one semiconductor channel; and forming a third conductive layer over the semiconductor channel.

公开(公告)号：US20180069190A1

公开(公告)日：2018-03-08

申请号：US15657369

申请日：2017-07-24

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： JAYBUM KIM ,  EOKSU KIM ,  KYOUNGSEOK SON ,  JUNHYUNG LIM ,  JIHUN LIM

IPC分类号： H01L51/52 ,  H01L51/00 ,  H01L27/11

CPC分类号： H01L51/5203 ,  G09G3/32 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0245 ,  G09G2310/0262 ,  H01L27/1108 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/0023 ,  H01L51/0096 ,  H01L51/5296 ,  H01L2227/323

摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20180047763A1

公开(公告)日：2018-02-15

申请号：US15029253

申请日：2016-02-25

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Wen SHI ,  Wenhui LI

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/49

CPC分类号： H01L29/7869 ,  C23C14/185 ,  C23C14/34 ,  H01L21/027 ,  H01L21/0272 ,  H01L21/28506 ,  H01L21/34 ,  H01L21/443 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78696 ,  H01L51/0016 ,  H01L51/0018 ,  H01L51/0023 ,  H01L2224/03472 ,  H01L2224/27472

摘要： A method of fabricating a thin film transistor structure is described. The method forms a photoresist pattern layer on an active pattern layer and a part of a gate insulating layer to expose a source predetermining position and a drain predetermining position of the gate insulating layer. The photoresist pattern layer has a plurality of inverted trapezoidal blocks which can be used as a mask, thereby depositing a metal layer on the photoresist pattern layer, the source predetermining position and the drain predetermining position. After removing the photoresist pattern layer and the metal layer thereon, the remaining metal layer is patterned to form a source and a drain. In the method of fabricating a thin film transistor structure, a fabricating process can be simplified, and it is unnecessary to form an etching stop layer to protect a back channel.