公开(公告)号：US3677280A

公开(公告)日：1972-07-18

申请号：US3677280D

申请日：1971-06-21

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： WECKLER GENE P

IPC: H01L21/00 ,  H01L27/07 ,  H01L27/144 ,  H01L31/00 ,  H01L15/06 ,  H01L19/00

CPC classification number: H01L21/00 ,  H01L27/0761 ,  H01L27/1443 ,  H01L31/00 ,  Y10S148/037 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/145

Abstract: The fabrication of two semiconductor structures such as a high speed, optimum sensitivity photodiode and a maximum gainbandwidth transistor on the same wafer is described. A thin, low resistivity layer is formed on a higher resistivity substrate and the diode junction is then formed in one part of the wafer by diffusing the junction-forming region through the layer and down into the substrate. This provides a diode of low capacitance and optimum light sensitivity. The transistor is then formed in another part of the same wafer by first diffusing the basecollector junction into the thin layer followed by a diffusion therein of the emitter-base junction. This diffusion into the layer is very shallow and results in a high gain-bandwidth transistor. The photodiode structure is affected very little by the processing required to form the transistor, thus allowing each structure to be independently optimized.

Abstract translation: 描述了在同一晶片上制造两个半导体结构，例如高速，最佳灵敏度光电二极管和最大增益带宽晶体管。 在较高电阻率的衬底上形成薄的低电阻率层，然后通过将结形成区域扩散通过该层并向下进入衬底而在晶片的一部分中形成二极管结。 这提供了低电容和最佳光敏度的二极管。 然后通过首先将基极 - 集电极结扩散到薄层中，随后在其中扩散发射极 - 基极结，将晶体管形成在相同晶片的另一部分中。 这种扩散到层中非常浅，并导致高增益带宽晶体管。 通过形成晶体管所需的处理，光电二极管结构受到很小的影响，从而允许每个结构独立优化。

公开(公告)号：US3535532A

公开(公告)日：1970-10-20

申请号：US3535532D

申请日：1969-04-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： MERRYMAN JERRY D

IPC: G02F3/00 ,  H01L27/00 ,  H01L27/144 ,  H01L31/00 ,  H03F3/08 ,  H03K17/795 ,  H03K19/14 ,  H01L15/06

CPC classification number: H03K19/14 ,  G02F3/00 ,  H01L27/00 ,  H01L27/1443 ,  H01L31/00 ,  H01L2224/32145 ,  H01L2224/73265 ,  H03F3/085 ,  H03K17/795

公开(公告)号：US3453507A

公开(公告)日：1969-07-01

申请号：US3453507D

申请日：1967-04-04

Applicant: HONEYWELL INC

Inventor： ARCHER ALVA I

IPC: G11C11/41 ,  H01L27/098 ,  H01L27/146 ,  H01L29/00 ,  H01L31/112 ,  H01L15/06

CPC classification number: H01L31/1126 ,  H01L27/098 ,  H01L27/14679 ,  H01L29/00 ,  Y10S148/018 ,  Y10S148/053 ,  Y10S148/12

公开(公告)号：US3430054A

公开(公告)日：1969-02-25

申请号：US50093465

申请日：1965-10-22

Applicant: SIEMENS AG

Inventor： KLEIN ERWIN

IPC: G01R15/22 ,  H03F3/387 ,  H04B10/50 ,  G02F1/28 ,  H01C7/08 ,  H01L15/06

CPC classification number: H03F3/387 ,  G01R15/22 ,  H04B10/504

公开(公告)号：US6079865A

公开(公告)日：2000-06-27

申请号：US58248

申请日：1998-04-10

Applicant: Daniel J. Plavcan ,  Paul Holbrook ,  Robert A. St. John

Inventor： Daniel J. Plavcan ,  Paul Holbrook ,  Robert A. St. John

IPC: A47J43/044 ,  A47J43/08 ,  H01H9/06 ,  H01L15/00 ,  B01F7/16 ,  H01L9/06 ,  H01L15/06

CPC classification number: B01F7/00583 ,  A47J43/044 ,  A47J43/082 ,  H01H9/06 ,  Y10S366/601

Abstract: A hand mixer 30 is formed with a housing 32 and a handle 34 extending in one direction from the housing. A pair of beaters 58 and 60 can be assembled with the hand mixer 30 and rotated by a motor 88 under the control of a sensory actuator 92. A slidable compliant switch pad 44 provides an external facility for an operator to selectively position the sensory actuator 92 to operate the motor 88, and the beaters 58 and 60, at the different speeds. The sensory actuator 92 provides a tactile response to the operator during selection of the different speeds. The hand mixer 30 is provided with a first embodiment of a beater ejection mechanism 192, or a second embodiment of a beater ejection mechanism 242, for facilitating ejection of the beaters 58 and 60 from the hand mixer. A button 52 located externally on top of the housing 32 provides operational access to the operator to initiate the beater ejection process.

Abstract translation: 手动混合器30形成有壳体32和从壳体沿一个方向延伸的手柄34。 一对搅打器58和60可以与手动混合器30一起组装，并在感官致动器92的控制下由马达88旋转。可滑动的柔性开关垫44为操作者提供选择性地定位感官致动器92的外部设备 以不同的速度操作马达88和搅打器58和60。 感觉致动器92在选择不同速度期间向操作者提供触觉响应。 手动搅拌器30设置有打浆机排出机构192的第一实施例或打浆器排出机构242的第二实施例，以便于从搅拌机排出搅拌机58和60。 位于壳体32顶部外部的按钮52提供对操作者的操作访问以启动打浆机喷射过程。

公开(公告)号：US3863070A

公开(公告)日：1975-01-28

申请号：US25027872

申请日：1972-05-04

Applicant: WHEELER ROBERT H ,  RALSTON RICHARD W

Inventor： WHEELER ROBERT H ,  RALSTON RICHARD W

IPC: H01L31/113 ,  H01L15/06

CPC classification number: H01L31/1136 ,  Y10S148/08 ,  Y10S148/115

Abstract: Quantum mechanical method and apparatus for detecting and modulating electromagnetic radiation in a wavelength range of from about 5 to about 50 Mu . A potential difference (gate voltage) is impressed across a channel formed in a siliconsilicon dioxide MOS assembly. The magnitude of the gate voltage is used to adjust the energy levels of the electrons in the channel and when resonant photons are introduced into the channel there occurs photoresistance along the channel, the magnitude of which is a function of the number of resonant photons entering the channel. The photoresistive effects are the result of the interaction between the quantized electrons in the channel and photons in the radiation introduced into the channel. The device may be voltage-tunable over the wavelength range and may be used as a detector set to sense radiation of a given wavelength or as a multispectral rapid scanning device. When a gate voltage is used to maximize the photoresistive effect for radiation of a given wavelength, the radiation may be amplitude modulated by superimposing a small auxiliary ac gate voltage on the dc gate voltage to periodically reduce the photoresistive effect, thus alternately absorbing and transmitting radiation.

Abstract translation: 用于检测和调制在约5至约50μm的波长范围内的电磁辐射的量子力学方法和装置。 在硅二氧化硅MOS组件中形成的沟道上施加电位差（栅极电压）。 栅极电压的大小用于调节通道中的电子的能级，并且当谐振光子被引入通道时，沿着沟道发生光阻，其大小是进入该通道的共振光子的数量的函数 渠道。 光致抗蚀效应是通道中量子化电子与引入通道的辐射光子之间相互作用的结果。 该装置可以在波长范围内是电压可调谐的，并且可以用作检测器组以感测给定波长的辐射或者作为多光谱快速扫描装置。 当使用栅极电压来最大化给定波长的辐射的光刻效果时，可以通过在直流栅极电压上叠加小的辅助ac栅极电压来对辐射进行幅度调制，以周期性地降低光致抗蚀剂效应，从而交替地吸收和传播辐射 。

公开(公告)号：US3714491A

公开(公告)日：1973-01-30

申请号：US3714491D

申请日：1970-04-13

Applicant: RCA LTD

Inventor： MC INTYRE R ,  SPRINGINGS H

IPC: G01J1/02 ,  G01S3/783 ,  H01L31/02 ,  H01L31/103 ,  H01L31/16 ,  H01J39/06 ,  H01L15/06

CPC classification number: G01S3/783 ,  H01L31/02024 ,  H01L31/103

Abstract: A quadrant photodiode including a flat substrate of high resistivity semiconductor material, such as silicon, of one conductivity type having a thin region of the one conductivity type within and extending across one surface thereof and four quadrant shaped regions of the opposite conductivity type in its other surface. The quadrant shaped regions are arranged in a circle with the straight edges of adjacent quadrants being in closely spaced relation. The surface of the substrate having the one conductivity type region therein is provided with V-shaped grooves which are directly opposed to and extend along the spaces between the edges of the quadrant-shaped regions. The surfaces of the grooves serve to refract the light which is incident on the surface toward the quadrant-shaped regions so as to prevent optical cross-talk between the quadrant-shaped regions.

Abstract translation: 一个象限光电二极管，包括一个导电类型的高电阻率半导体材料（如硅）的平坦基片，其中一个导电类型的薄区域在其一个表面内延伸，并在其另一个表面延伸，另一个导电类型的四个象限区域在另一个 表面。 象限形状区域被布置成圆形，相邻象限的直边缘处于紧密间隔的关系。 其中具有一个导电类型区域的基板的表面设置有与四边形区域的边缘之间的空间直接相对且延伸的V形槽。 槽的表面用于将入射在表面上的光朝向四分之一区域折射，以防止象限区域之间的光学串扰。

公开(公告)号：US3693060A

公开(公告)日：1972-09-19

申请号：US3693060D

申请日：1971-04-13

Applicant: PHILIPS CORP

Inventor： JOYCE MICHAEL F

IPC: C07F9/40 ,  H03K3/42 ,  H03K17/785 ,  H03K17/79 ,  H01L15/06

CPC classification number: H03K17/79 ,  C07F9/4006 ,  H03K3/42 ,  H03K17/785 ,  Y10T307/773

Abstract: A solid-state relay utilizing a light-emitting diode to transmit optical energy steadily to a photo-sensitive solid-state device to control the conductivity of solid -state elements. A relatively low power source of AC or DC can be used to operate photo-sensitive uni-junction transistor or a pair of lightactivated silicon-controlled rectifiers.

Abstract translation: 一种使用发光二极管的固态继电器将光能稳定地传输到感光固态器件以控制固态元件的导电性。 AC或DC的相对较低的电源可用于操作光敏单结晶体管或一对光激活硅控整流器。

公开(公告)号：US3656032A

公开(公告)日：1972-04-11

申请号：US3656032D

申请日：1969-09-22

Applicant: ENERGY CONVERSION DEVICES INC

Inventor： HENISCH HEINZ K

IPC: H01L45/00 ,  H01L15/00 ,  H01L15/02 ,  H01L15/06

CPC classification number: H01L45/04 ,  H01L45/1213

Abstract: A controllable semiconductor switch comprises an anode, a cathode and a switchable amorphous semiconductor element interposed between the anode and cathode. The switchable amorphous semiconductor element has a high electrical resistance for substantially blocking current between the anode and cathode, and it, upon the application of a voltage above a threshold voltage value to the anode and cathode of the semiconductor switch, is capable of having at least portions thereof between the anode and cathode substantially instantaneously changed to a low electrical resistance for substantially conducting current between the anode and cathode. The anode or cathode or both may comprise a semiconductor which regulates the threshold voltage value of the semiconductor switch. Where the cathode or anode comprises a semiconductor and the other a metal, the semiconductor switch may be asymmetric in its operation, it having a higher threshold voltage value for one polarity of the voltage applied to the anode or cathode than for the opposite polarity. By controlling the semiconductor anode and/or cathode the threshold voltage value of the semiconductor switch may be varied or regulated to desired values.

Abstract translation: 可控半导体开关包括阳极，阴极和置于阳极和阴极之间的可切换非晶半导体元件。 可切换非晶半导体元件具有高电阻，用于基本上阻挡阳极和阴极之间的电流，并且在向半导体开关的阳极和阴极施加高于阈值电压值的电压时，能够至少具有 基本上立即将阳极和阴极之间的部分改变为低电阻，以在阳极和阴极之间实质上传导电流。 阳极或阴极或两者可以包括调节半导体开关的阈值电压值的半导体。 在阴极或阳极包括半导体而另一个是金属的情况下，半导体开关在其操作中可能是不对称的，它对于施加到阳极或阴极的电压的一个极性具有比相反极性更高的阈值电压值。 通过控制半导体阳极和/或阴极，可以改变或调节半导体开关的阈值电压值至所需值。

公开(公告)号：US3622845A

公开(公告)日：1971-11-23

申请号：US3622845D

申请日：1969-05-01

Applicant: GEN ELECTRIC

Inventor： MCINTYRE JAMES E ,  PICCONE DANTE E ,  SOMOS ISTVAN

IPC: H01L29/74 ,  H01L29/00 ,  H02M1/00 ,  H02M1/32 ,  H03K17/081 ,  H01L11/10 ,  H01L15/06

CPC classification number: H02M1/32 ,  H01L29/00 ,  H03K17/08108

Abstract: This thyristor utilizes the emitter gate heretofore described and claimed in our copending U.S. Pat. application Ser. No. 602,837, filed Dec. 19, 1966, and assigned to the assignee of the present invention (now Pat. No. 3,489,962). According to that disclosure, part of an electrode-less auxiliary region in one end layer (the emitter) of A PNPN semiconductor body is exposed to suitable triggering means for turning on the device According to the present improvement, an island of electroconductive material remote from the cathode and separate from the triggering means is disposed on another part of the auxiliary region between said exposed part and a laterally adjacent main region of the emitter, and the other part is connected to the main region in a manner to ensure a high turn-on di/dt capability when the referenced device is triggered by a ''''soft'''' gate drive.