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公开(公告)号:US20220271734A1
公开(公告)日:2022-08-25
申请号:US17651300
申请日:2022-02-16
发明人: Benjamin Paul Abbott , Gong Bin Tang , Rei Goto , Keiichi Maki
摘要: An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.
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公开(公告)号:US10938372B2
公开(公告)日:2021-03-02
申请号:US16390739
申请日:2019-04-22
IPC分类号: H03H9/02 , H03H3/10 , H03H9/145 , H03H9/64 , H03H9/72 , B23K26/53 , B23K26/00 , H03H9/25 , H01L41/338 , H01L41/312
摘要: An acoustic wave resonator includes: a piezoelectric substrate; a pair of comb-shaped electrodes that is located on the piezoelectric substrate and excites an acoustic wave, each of the pair of comb-shaped electrodes including a plurality of electrode fingers; and a polycrystalline substrate that is located at an opposite side of the piezoelectric substrate from a surface on which the pair of comb-shaped electrodes is located, an average particle size of the polycrystalline substrate being equal to or less than 66 times an average pitch of the plurality of electrode fingers.
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公开(公告)号:US20210057635A1
公开(公告)日:2021-02-25
申请号:US17044132
申请日:2019-03-13
申请人: Soitec
IPC分类号: H01L41/08 , H01L41/319 , H01L41/43 , H03H3/10 , H03H9/02
摘要: A hybrid structure for a surface acoustic wave device comprises a working layer of piezoelectric material assembled with a support substrate having a lower coefficient of thermal expansion than that of the working layer, and an intermediate layer located between the working layer and the support substrate. The intermediate layer is a sintered composite layer formed from powders of at least a first material and a second material different from the first.
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公开(公告)号:US10826459B2
公开(公告)日:2020-11-03
申请号:US15735477
申请日:2016-06-09
申请人: Soitec
发明人: Arnaud Castex , Daniel Delprat , Bernard Aspar , Ionut Radu
IPC分类号: H03H9/02 , H03H3/10 , H01L41/312 , H01L41/08 , H01L41/313 , H01L41/47 , H03H3/04 , H01L41/332 , H01L41/337 , H03H9/64
摘要: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
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公开(公告)号:US10812035B2
公开(公告)日:2020-10-20
申请号:US16129346
申请日:2018-09-12
发明人: Rhonda Hyndman , Steve Burgess
IPC分类号: H03H3/10 , H03H9/25 , C23C14/08 , C23C14/34 , C23C14/35 , H03H9/02 , H03H9/145 , H03H9/64 , H01L41/053 , H01L41/23 , C23C14/10 , C23C14/54 , H03H3/08 , C23C14/00 , H03H3/04
摘要: A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.
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公开(公告)号:US20190392090A1
公开(公告)日:2019-12-26
申请号:US16400717
申请日:2019-05-01
申请人: Resonant, Inc.
发明人: Kurt F. Raihn , Patrick J. Turner , Neal O. Fenzi
摘要: A method for designing a narrowband acoustic wave microwave filter including: generating a modeled filter circuit design having circuit elements including an acoustic resonant element defined by an electrical circuit model that includes a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss; and generating a final circuit design. Generating the final circuit design includes optimizing the modeled filter circuit design to generate an optimized filter circuit design; comparing a frequency response of the optimized filter circuit design to requirements; selecting the optimized filter circuit design for construction into the actual acoustic microwave filter based on the comparison; and transforming the optimized filter circuit design to a design description file for input to a construction process.
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公开(公告)号:US10425116B2
公开(公告)日:2019-09-24
申请号:US15922955
申请日:2018-03-16
发明人: Akira Konno , Masakazu Mimura
摘要: An elastic wave device includes a LiNbO3 substrate, an IDT electrode provided on the LiNbO3 substrate, and a dielectric film that is provided on the LiNbO3 substrate so as to cover the IDT electrode and includes a projection on an upper surface of the stated dielectric film. A main mode of an elastic wave excited by the IDT electrode uses a Rayleigh wave, and a thickness of the IDT electrode is set such that a frequency at which a response by an SH wave appears is lower than a resonant frequency of the Rayleigh wave.
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公开(公告)号:US20190253035A1
公开(公告)日:2019-08-15
申请号:US16314832
申请日:2018-02-14
发明人: Kazuhiko YAMANOUCHI
IPC分类号: H03H9/02 , H03H3/04 , H03H3/10 , H03H9/05 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/19 , H03H9/25 , H03H9/56 , H03H9/64
CPC分类号: H03H9/02842 , H03H3/02 , H03H3/04 , H03H3/10 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02102 , H03H9/0211 , H03H9/02543 , H03H9/02551 , H03H9/02559 , H03H9/0259 , H03H9/02637 , H03H9/02834 , H03H9/0561 , H03H9/13 , H03H9/145 , H03H9/17 , H03H9/174 , H03H9/176 , H03H9/19 , H03H9/25 , H03H9/562 , H03H9/564 , H03H9/6489 , H03H2003/0407
摘要: An acoustic wave element which can be reduced in size and produced relatively easily, practically used without using harmful substances, and can suppress a surface acoustic wave propagation loss, which has an excellent temperature coefficient of frequency and a velocity dispersion characteristic, and with which an increase in the reflection coefficient of interdigital transducers can be suppressed, and a method for manufacturing the acoustic wave element are provided. The acoustic wave element includes a pair of electrodes provided on both surfaces of a piezoelectric substrate, and a dielectric film provided on a first surface of the piezoelectric substrate so as to cover the electrode. The acoustic wave element alternatively includes interdigital transducers provided on a first surface of the piezoelectric substrate, and a dielectric film provided on the interdigital transducers, a gap between the interdigital transducers, and/or a second surface of the piezoelectric substrate.
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公开(公告)号:US20190207585A1
公开(公告)日:2019-07-04
申请号:US16296812
申请日:2019-03-08
申请人: NGK INSULATORS, LTD.
发明人: Yuki NOMOTO , Kei TANAKA , Katsuhiro INOUE , Yuji KATSUDA
IPC分类号: H03H9/25 , H03H9/05 , H03H3/10 , H03H9/02 , B32B38/00 , B28B3/00 , B28B7/34 , B32B18/00 , B32B37/10 , B32B37/18 , B28B11/08 , C04B37/00
CPC分类号: H03H9/25 , B28B3/00 , B28B7/34 , B28B11/0845 , B32B18/00 , B32B37/10 , B32B37/18 , B32B38/0012 , B32B2250/02 , B32B2305/80 , B32B2307/10 , B32B2307/20 , B32B2307/538 , B32B2307/546 , B32B2307/72 , B32B2310/0875 , B32B2315/02 , B32B2457/00 , C04B37/001 , C04B37/003 , C04B2237/341 , C04B2237/345 , C04B2237/52 , C04B2237/708 , H03H3/10 , H03H9/02574 , H03H9/02622 , H03H9/058
摘要: A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.
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公开(公告)号:US20190068159A1
公开(公告)日:2019-02-28
申请号:US16110980
申请日:2018-08-23
申请人: Resonant Inc.
发明人: Sean McHugh , Patrick Turner , Ventsislav Yantchev , Filip Iliev
摘要: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12 P≤DCU≤0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU≤DOX≤4.5DCU.
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