Abstract:
A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more types of etching methods are performed in combination, on stacked films containing first and second films being deposited sequentially on a substrate and each having a different film property. The two or more types of wet etching methods include, at least, a first wet etching method in which side-etching on the first film is facilitated more than side-etching on the second film and a second wet etching method in which side-etching on the second film is facilitated more than side-etching on the first film.
Abstract:
A reflector for a reflection-type LCD device is provided, which reflects efficiently incident light to the viewer's side and that suppresses the change of color tone. The reflector comprises a roughened surface having a protrusion pattern. The protrusion pattern gives inclination angle to the surface according to a specific distribution where a first component with an inclination angle value of 0null is 15% or less in area and a second component with an inclination angle value from 2null to 10null is 50% or greater in area. The protrusion pattern gives a variation range of chromaticity coordinates (x, y) on a chromaticity diagram dependent on an angle of view. The variation range is limited in a circle on the chromaticity diagram. The circle has a radius of approximately 0.05 and a center at a point corresponding to white color.
Abstract:
An active matrix liquid crystal display device operates such that the polarity of a voltage on a common electrode 30 is inverted by row or by frame. A charge collection/resupply circuit includes a switch connected between the common electrode and a common voltage output buffer, a charge collection capacitor, and a switch connected between a connection point of the common electrode and the switch and the charge collection capacitor. The switch control unit is configured to operate such that immediately before a polarity of a common voltage VCOM10 is inverted, the switch 11 is turned off and then the switch 12 is turned on, and further, after inversion of the polarity of the common voltage VCOM, the switch is turned off and then the switch is turned on.
Abstract:
Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film.
Abstract:
A light-reflection type liquid crystal display device includes (a) a liquid crystal display panel, (b) a polarizer mounted on the liquid crystal display panel, (c) a light-guide mounted on the polarizer, (d) a light source arranged adjacent to an end of the light-guide for supplying light to the liquid crystal display panel through the light-guide, (e) an operation panel mounted above the light-guide for operating the light-reflection type liquid crystal display device, (f) a chassis for supporting the liquid crystal display panel therewith, (g) a frame covering the light source therewith, the frame having an opening facing the light-guide, and (h) a shield coupled to the chassis and covering the light-guide therewith except a portion of the light-guide facing the light source, the shield cooperating with the frame to support the operation panel therewith.
Abstract:
A thin-film transistor is formed by a polycrystalline silicon film having a thin-film part and a thick-film part, the thin-film part minimally being used as a channel part. The polycrystalline silicon film is formed by laser annealing with an energy density that completely melts the thin-film part but does not completely melt the thick-film part. Because large coarse crystal grains growing from the boundary between the thin-film part and the thick-film part form the channel part, it is possible to use a conventional laser annealing apparatus to easily achieve high carrier mobility and low leakage current and the like.
Abstract:
A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.
Abstract:
A display device comprising a light source and having an optical waveguide, a louver, an anisotropic scattering sheet, and a transmissive liquid crystal panel disposed along the path of light emitted from the light source. The light-restricting direction of the louver is tilted at an angle α from the Y-axis direction. The value of the angle α is set so that the arrangement direction of moiré created between the louver and the liquid crystal panel approaches the X-axis direction. A plurality of belt-shaped convex portions extending in the Y-axis direction are formed on the surface of the anisotropic scattering sheet, and are configured so that the scattering direction of the light has anisotropy. Specifically, scattering in the X-axis direction is increased, and scattering in the Y-axis direction is reduced. Moiré can thereby be reduced in a display device having increased directivity of the display.
Abstract:
The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed.
Abstract:
The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate.