公开(公告)号：US20120267237A1

公开(公告)日：2012-10-25

申请号：US13497176

申请日：2010-09-17

申请人： Alistair Kean

发明人： Alistair Kean

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  B22F2998/00 ,  C22C9/00 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3444 ,  B22F1/0018 ,  B22F9/14 ,  B22F2202/13

摘要： We have found that a pulsed DC supply is surprisingly beneficial in the use of sputter deposition for creating nanoparticles. The deposition rate is increased, and the particle size can be tuned so that it clusters around a specific value. A method of sputter deposition is therefore disclosed, comprising the steps of providing a magnetron, a sputter target, and an AC power supply or a pulsed DC power supply for the magnetron, sputtering particles from the sputter target into a chamber containing an inert gas, allowing the particles to coalesce into nanoparticles, and controlling the frequency of said AC power supply or said pulsed DC power supply to take one of a plurality of frequency values, each frequency value corresponding to a respective size distribution of said nanoparticles. The power supply frequency is preferably between 75 kHz and 150 kHz as this appears to yield optimal results. A corresponding apparatus for generating nanoparticles is also disclosed.

摘要翻译： 我们已经发现，脉冲DC电源在使用溅射沉积来产生纳米颗粒方面令人惊奇地是有益的。 沉积速率增加，并且可以调节粒度以使其围绕特定值聚集。 因此，公开了溅射沉积的方法，包括以下步骤：提供用于磁控管的磁控管，溅射靶，AC电源或脉冲DC电源，将溅射靶溅射到包含惰性气体的室中， 允许颗粒聚结成纳米颗粒，并且控制所述AC电源或所述脉冲DC电源的频率以采用多个频率值中的一个，每个频率值对应于所述纳米颗粒的相应尺寸分布。 电源频率优选在75kHz和150kHz之间，因为这似乎产生最佳结果。 还公开了一种用于产生纳米颗粒的相应装置。

公开(公告)号：US08262869B2

公开(公告)日：2012-09-11

申请号：US10563864

申请日：2004-07-09

申请人： Vladimir Kouznetsov

发明人： Vladimir Kouznetsov

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： H01J37/3444 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/351 ,  H01J37/32697 ,  H01J37/3405

摘要： Work piece processing is performed by pulsed discharges between an anode (2) and a magnetron sputtering cathode (1) in solid-gas plasmas using a chamber (2) containing the work piece (7). A system (12) maintains a vacuum in the chamber and another system (14) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs (3) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A potential is applied to the work piece so that a pulsed current comprising biasing pulses arises between the second electrodes. In particular biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges. The method is efficient for processing or modifying surface regions of work pieces of various kinds and configurations and can be employed for achieving efficient work piece etching, interface mixing, surface and balk diffusion, gas absorption and desorption, initial and further stages of thin film condensation, and for performing ion plating.

摘要翻译： 使用包含工件（7）的室（2）在固体气体等离子体中的阳极（2）和磁控溅射阴极（1）之间进行脉冲放电来进行工件处理。 系统（12）在腔室中保持真空，另一个系统（14）提供溅射和反应气体。 在包括阳极和阴极的等离子体脉冲发生器电路中产生脉冲，产生气体的放电和部分电离的固体等离子体团（3）从阴极表面的区域向工件和阳极移动或扩展。 对工件施加电位，使得在第二电极之间产生包括偏置脉冲的脉冲电流。 特别地，当所述等离子体斑点扩散到阳极和工件处的区域时，在阳极和工件之间产生偏置放电，使得脉冲电流是这些偏压放电的电流。 该方法对于加工或修改各种工件的表面区域是有效的，可用于实现有效的工件蚀刻，界面混合，表面和焊条扩散，气体吸收和解吸，薄膜冷凝的初始和进一步阶段 ，并进行离子镀。

公开(公告)号：US20120097524A1

公开(公告)日：2012-04-26

申请号：US12908745

申请日：2010-10-20

申请人： John A. Pipitone ,  Gerald E. Boston

发明人： John A. Pipitone ,  Gerald E. Boston

IPC分类号： C23C14/54 ,  C23C14/34

CPC分类号： C23C14/354 ,  C23C14/54 ,  H01J37/32183 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3444

摘要： Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.

摘要翻译： 本公开的实施例可以提供用于物理气相沉积的匹配网络。 匹配网络可以包括通过具有第一调谐电路的第一阻抗匹配网络耦合到沉积室目标的第一RF发生器。 第一RF发生器可以被配置为将第一AC信号引入到沉积室靶。 匹配网络还可以包括通过第二阻抗匹配网络耦合到沉积室基座的第二RF发生器。 第二RF发生器可以被配置为将第二AC信号引入到沉积室基座。 第一调谐电路可以被配置为修改第二AC信号对在沉积室靶和沉积室基座之间形成的等离子体的影响。

公开(公告)号：US20110303534A1

公开(公告)日：2011-12-15

申请号：US13148154

申请日：2010-02-15

申请人： Yoshio Yanagiya

发明人： Yoshio Yanagiya

IPC分类号： H02M7/42 ,  C23C14/34

CPC分类号： C23C14/3464 ,  C23C14/3485 ,  H01J37/34 ,  H01J37/3444 ,  H01J37/3467 ,  H02M1/34 ,  H02M7/53871 ,  H02M2001/344

摘要： There is provided an AC power supply for a sputtering apparatus in which the AC power supply can prevent the induction of an arc discharge by suppressing an overvoltage to be generated when the polarity of each electrode is reversed. A bridge circuit made up of a plurality of switching transistors SW1-SW4 is disposed between positive and negative DC current output lines from a DC electric power supply source. An inductor DCL which makes a DC output to have a constant-current characteristic is disposed in at least one of the positive and the negative DC output lines from the DC electric power supply source to the bridge circuit, and a snubber circuit is disposed in parallel with inputs of the bridge circuit.

摘要翻译： 提供一种用于溅射装置的交流电源，其中交流电源可以通过抑制当每个电极的极性反转时产生的过电压来防止电弧放电的感应。 由多个开关晶体管SW1-SW4构成的桥接电路配置在直流电源的正，负直流电流输出线之间。 使直流输出具有恒定电流特性的电感器DCL配置在从直流电源到桥接电路的正极和负极直流输出线中的至少一个中，缓冲电路并联设置 与桥接电路的输入。

公开(公告)号：US08070925B2

公开(公告)日：2011-12-06

申请号：US12253603

申请日：2008-10-17

申请人： Daniel J. Hoffman ,  Ying Rui ,  Karl M. Brown ,  John Pipitone ,  Lara Hawrylchak

发明人： Daniel J. Hoffman ,  Ying Rui ,  Karl M. Brown ,  John Pipitone ,  Lara Hawrylchak

IPC分类号： C23C14/35

CPC分类号： H01J37/3408 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3444 ,  H01J37/3455

摘要： In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.

摘要翻译： 在具有在天花板上的溅射靶的PVD反应器中，包围旋转磁体组件的导电壳体具有用于旋转磁体轴的中心端口。 壳体的导电中空圆筒围绕主轴的外部。 RF功率耦合到从中空圆柱体径向延伸的径向RF连接杆。 直流电力耦合到从中空圆柱体径向延伸的另一个径向直流连接杆。

公开(公告)号：US20110133651A1

公开(公告)日：2011-06-09

申请号：US13010762

申请日：2011-01-20

申请人： Roman Chistyakov ,  Bassam Hanna Abraham

发明人： Roman Chistyakov ,  Bassam Hanna Abraham

IPC分类号： H05H1/46 ,  H05H1/24

CPC分类号： C23C14/3414 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/564 ,  H01J37/32009 ,  H01J37/32018 ,  H01J37/3408 ,  H01J37/3444 ,  H01J2237/0206

摘要： A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma.

摘要翻译： 等离子体发生器包括用于限制进料气体的室。 阳极位于室内。 阴极组件邻近室内的阳极定位。 包括至少两个固态开关并具有电连接在阳极和阴极组件之间的输出的脉冲电源产生电压微脉冲。 使用包括产生强电离等离子体的振幅和频率的电压振荡的电压波形来产生电压微脉冲的脉冲宽度和占空比。

公开(公告)号：US07927466B2

公开(公告)日：2011-04-19

申请号：US11525368

申请日：2006-09-22

申请人： Mihai Ganciu-Petcu ,  Michel Hecq ,  Jean-Pierre Dauchot ,  Stephanos Konstantinidis ,  Jean Bretagne ,  Ludovic De Poucques ,  Michel Touzeau

发明人： Mihai Ganciu-Petcu ,  Michel Hecq ,  Jean-Pierre Dauchot ,  Stephanos Konstantinidis ,  Jean Bretagne ,  Ludovic De Poucques ,  Michel Touzeau

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00

CPC分类号： C23C14/35 ,  C23C14/358 ,  H01J37/3405 ,  H01J37/3444

摘要： The present invention relates to the deposition in a magnetron reactor (1) equipped with a magnetron cathode (MC) of at least one material on a substrate (11a), according to which process said material is vaporized by magnetron sputtering, using a gas that is ionized in pulsed mode. To this effect and in order to favour the formation of high current pulses of short duration while avoiding the formation of electric arcs and while enabling an effective ionisation of the sputtered vapour, a preionization of the said gas prior to the application of the main voltage pulse on the magnetron cathode (MC) is carried out in order to generate current pulses (CP) whose decay time (Td), after cut-off of the main voltage pulse (VP) is shorter than 5 μs.

摘要翻译： 本发明涉及在基板（11a）上配备有至少一种材料的磁控管阴极（MC）的磁控管反应器（1）中的沉积，根据该方法，所述材料通过磁控溅射蒸发，使用气体 以脉冲模式电离。 为此，为了有利于形成短持续时间的高电流脉冲，同时避免电弧的形成，并且同时能够有效地电离溅射的蒸汽，在施加主电压脉冲之前对所述气体进行预电离 执行磁控管阴极（MC），以产生在主电压脉冲（VP）截止后的衰减时间（Td）小于5μs的电流脉冲（CP）。

公开(公告)号：US20110048924A1

公开(公告)日：2011-03-03

申请号：US12550573

申请日：2009-08-31

申请人： Martin Freeborn ,  Vince Burkhart

发明人： Martin Freeborn ,  Vince Burkhart

IPC分类号： H05H1/24 ,  C23C14/34

CPC分类号： H01J37/34 ,  C23C14/34 ,  H01J37/3444

摘要： A plasma ignition system includes a first voltage supply that selectively supplies a plasma ignition voltage and a plasma maintenance voltage across an adapter ring and a cathode target of a physical vapor deposition (PVD) system. A second voltage supply selectively supplies a second voltage across the adapter ring and an anode ring of the PVD system. A plasma ignition control module ignites plasma using the plasma ignition voltage and the auxiliary plasma ignition voltage and, after the plasma ignites, supplies the plasma maintenance voltage and ceases supplying the plasma ignition voltage and the auxiliary plasma ignition voltage.

摘要翻译： 等离子体点火系统包括第一电压源，其选择性地提供物理气相沉积（PVD）系统的适配环和阴极靶上的等离子体点火电压和等离子体维持电压。 第二电压源选择性地提供穿过适配环和PVD系统的阳极环的第二电压。 等离子体点火控制模块使用等离子体点火电压和辅助等离子体点火电压点燃等离子体，并且在等离子体点火之后，提供等离子体维持电压并停止提供等离子体点火电压和辅助等离子体点火电压。

公开(公告)号：US07898183B2

公开(公告)日：2011-03-01

申请号：US12651368

申请日：2009-12-31

申请人： Roman Chistyakov ,  Bassam Hanna Abraham

发明人： Roman Chistyakov ,  Bassam Hanna Abraham

IPC分类号： H01J7/24

CPC分类号： H01J37/32045 ,  H01J37/32009 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3444 ,  H01J2237/0206

摘要： A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

摘要翻译： 强离子化等离子体发生器包括用于限制进料气体的室。 阳极位于室内。 阴极组件邻近室内的阳极定位。 脉冲电源的输出电连接在阳极和阴极组件之间。 脉冲电源包括由驱动器产生的微脉冲控制的固态开关。 微脉冲的脉冲宽度和占空比中的至少一个被改变，使得电源在具有包括峰值电压和足够产生的峰值电压和上升时间的低功率级的输出端产生多级电压波形 来自进料气体的等离子体和包括足以产生更强电离等离子体的峰值电压和上升时间的瞬态级。

公开(公告)号：US20110011737A1

公开(公告)日：2011-01-20

申请号：US12505042

申请日：2009-07-17

申请人： Jin-Yu Wu ,  Wen-Lung Liung ,  Ming-Jui Tsai ,  Der-Jun Jan ,  Cheng-Chang Hsieh ,  Shin-Wu Wei ,  Chia-Cheng Lee ,  Chi-Fong Ai

发明人： Jin-Yu Wu ,  Wen-Lung Liung ,  Ming-Jui Tsai ,  Der-Jun Jan ,  Cheng-Chang Hsieh ,  Shin-Wu Wei ,  Chia-Cheng Lee ,  Chi-Fong Ai

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/3444 ,  H01J37/3467

摘要： A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.

摘要翻译： 提供了适用于在工件上涂覆的磁控溅射装置。 磁控溅射装置包括真空室，保持器，磁控管等离子体源和大功率脉冲电源组，其中磁控管等离子体源包括基极，磁控管控制器和靶。 反应气体被输入到真空室中，并且支撑工件的支架设置在真空室内。 磁控管等离子体源与工件相对设置，其中磁控管控制器设置在基座中，并且目标件设置在基座上。 大功率脉冲电源组耦合到真空室，磁控管等离子体源和保持器，并且高压脉冲功率被输入到磁控管等离子体源以产生等离子体以在工件的表面上涂覆膜。