CRACK DETECTOR FOR SEMICONDUCTOR DIES
    201.
    发明公开

    公开(公告)号:US20230168300A1

    公开(公告)日:2023-06-01

    申请号:US18053688

    申请日:2022-11-08

    CPC classification number: G01R31/315 H01L22/12

    Abstract: An assembly for detecting a structural defect in a semiconductor die is provided. The assembly includes a defect-detection sensor and a microcontroller. The defect-detection sensor includes a plurality of resistive paths of electrical-conductive material in the semiconductor die, each of which has a first end and a second end and extends proximate a perimeter of the semiconductor die. The defect-detection sensor includes a plurality of signal-generation structures, each coupled to a respective resistive path and configured to supply a test signal to the resistive path. The microcontroller is configured to control the signal-generation structures to generate the test signals, acquire the test signals in each resistive paths, test an electrical feature of the resistive paths by performing an analysis of the test signals acquired and detect the presence of the structural defect in the semiconductor die based on a result of the analysis of the test signals acquired.

    ELECTROSTATIC CHARGE SENSOR WITH HIGH IMPEDANCE CONTACT PADS

    公开(公告)号:US20230168290A1

    公开(公告)日:2023-06-01

    申请号:US17537069

    申请日:2021-11-29

    Inventor: Massimo ORIO

    CPC classification number: G01R29/12 G01R29/0878 G01R29/24

    Abstract: The present disclosure is directed to a device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

    Method of controlling a half-bridge circuit

    公开(公告)号:US11652479B2

    公开(公告)日:2023-05-16

    申请号:US17659226

    申请日:2022-04-14

    CPC classification number: H03K17/6877 H02M1/0025 H02M3/157 H03K17/6874

    Abstract: A method of controlling a half-bridge circuit includes receiving an analog feedback signal proportional to an output of the half-bridge circuit, comparing the received analog feedback signal with a threshold value, selecting a digital feedback signal based on a result of the comparing, comparing the digital feedback signal with a digital reference signal to generate a digital error signal, integrating the digital error signal to generate an integration error signal, downscaling the integral error signal to generate a downscaled integration signal, sampling the downscaled integration signal to generate a sampled integration signal, and generating pulsed signals from the sampled integration signal to provide an input to the half-bridge circuit.

    ADAPTIVE RECTIFICATION FOR PREVENTING CURRENT INVERSION IN MOTOR DRIVING

    公开(公告)号:US20230137346A1

    公开(公告)日:2023-05-04

    申请号:US17514832

    申请日:2021-10-29

    Abstract: A method and apparatus for adaptive rectification for preventing current inversion in motor windings are provided. In the method and apparatus, first and second half bridges of a plurality of half bridges are operated to synchronously rectify and permit passage of current, through the windings of the motor, in a first direction. A change of direction of the current from the first direction to a second direction opposite the first direction is detected. In response to detecting that the current changed direction to the second direction, the first and second half bridges of the plurality of half bridges are operated to quasi-synchronously rectify and block passage of the current through the windings in the second direction.

    MEMS GYROSCOPE HAVING QUADRATURE COMPENSATION ELECTRODES AND METHOD FOR COMPENSATING A QUADRATURE ERROR

    公开(公告)号:US20230135941A1

    公开(公告)日:2023-05-04

    申请号:US18048370

    申请日:2022-10-20

    Abstract: The present disclosure is directed to a MEMS gyroscope formed by a substrate and a movable mass suspended on the substrate and configured to carry out a movement in a driving direction and in a detection direction perpendicular to each other. The movable mass has a first face and a second face opposite to the first face. The gyroscope also has a first and a second quadrature compensation electrode group, fixed to the substrate and capacitively coupled to the movable mass. The first quadrature compensation electrode group faces the first face of the movable mass, and the second quadrature compensation electrode group faces the second face of the movable mass. The first and the second quadrature compensation electrode groups each have a respective variable facing area on the movable mass as a result of the movement of the movable mass in the driving direction and are configured to exert an electrostatic force on the movable mass during the movement of the movable mass in the driving direction.

    SEMICONDUCTOR POWER DEVICE WITH SHORT CIRCUIT PROTECTION AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE

    公开(公告)号:US20230134850A1

    公开(公告)日:2023-05-04

    申请号:US18045784

    申请日:2022-10-11

    Abstract: A semiconductor power device has a maximum nominal voltage and includes: a first conduction terminal and a second conduction terminal; a semiconductor body, containing silicon carbide and having a first conductivity type; body wells having a second conductivity type, housed in the semiconductor body and separated from one another by a body distance; source regions housed in the body wells; and floating pockets having the second conductivity type, formed in the semiconductor body at a distance from the body wells between a first face and a second face of the semiconductor body. The floating pockets are shaped and arranged relative to the body wells so that a maximum intensity of electrical field around the floating pockets is greater than a maximum intensity of electrical field around the body wells at least for values of a conduction voltage between the first conduction terminal and the second conduction terminal greater than a threshold voltage, the threshold voltage being less than the maximum nominal voltage.

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