公开(公告)号：US20240244732A1

公开(公告)日：2024-07-18

申请号：US18289069

申请日：2022-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takashi SHINGU ,  Tsunenori SUZUKI ,  Satoshi SEO ,  Haruki KATAGIRI ,  Noboru INOUE ,  Kazuhiko FUJITA ,  Toshiki SASAKI ,  Hideko YOSHIZUMI

IPC: H05B47/165 ,  F21V1/14 ,  F21Y115/15

CPC classification number: H05B47/165 ,  F21V1/146 ,  F21Y2115/15

Abstract: Provided is a novel light adjustment program that can make a human feel at ease. Provided is the light adjustment program that includes the steps of obtaining basic data having 1/f fluctuation characteristics; generating first smoothed data and second smoothed data by performing moving average processing with different periods on the basic data having 1/f fluctuation characteristics; generating light adjustment data by subjecting the first smoothed data and the second smoothed data to arithmetic processing; and changing luminance of a light-emitting device in time series in accordance with the light adjustment data.

公开(公告)号：US20240243204A1

公开(公告)日：2024-07-18

申请号：US18522543

申请日：2023-11-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L27/12 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66 ,  G11C7/00 ,  G11C19/28 ,  H02M3/07

CPC classification number: H01L29/78609 ,  G06K19/07758 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  G11C7/00 ,  G11C19/28 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor, With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US12041800B2

公开(公告)日：2024-07-16

申请号：US17777384

申请日：2020-11-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuro Kanemura ,  Yusuke Negoro

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device having a color imaging function and an infrared imaging function is provided. The imaging device has a structure in which a first photoelectric conversion device and a second photoelectric conversion device are stacked, and the second photoelectric conversion device generates electric charge by absorbing infrared light and transmits light having a wavelength of a higher energy than that of infrared light. The first photoelectric conversion device is positioned to overlap with the second photoelectric conversion device, and generates electric charge by absorbing light (visible light) passing through the second photoelectric conversion device. Thus, a subpixel for color imaging and a subpixel for infrared imaging can be positioned to overlap with each other, and an infrared imaging function can be added without a decrease in the definition of color imaging.

公开(公告)号：US12041366B2

公开(公告)日：2024-07-16

申请号：US17911193

申请日：2021-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeya Hirose ,  Seiichi Yoneda ,  Hiroki Inoue ,  Takayuki Ikeda ,  Shunpei Yamazaki

IPC: H04N25/78 ,  H04N25/705 ,  H04N25/77

CPC classification number: H04N25/705 ,  H04N25/77 ,  H04N25/78

Abstract: An imaging device having a function of processing an image is provided. The imaging device has an additional function such as image processing, can hold analog data obtained by an image capturing operation in a pixel, and can extract data obtained by multiplying the analog data by a predetermined weight coefficient. Difference data between adjacent light-receiving devices can be obtained in a pixel, and data on luminance gradient can be obtained. When the data is taken in a neural network or the like, inference of distance data or the like can be performed. Since enormous volume of image data in the state of analog data can be held in pixels, processing can be performed efficiently.

公开(公告)号：US12040653B2

公开(公告)日：2024-07-16

申请号：US17283689

申请日：2019-10-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Munehiro Kozuma ,  Takayuki Ikeda ,  Takanori Matsuzaki ,  Kei Takahashi ,  Mayumi Mikami ,  Shunpei Yamazaki

IPC: H02J7/00 ,  G11C11/401 ,  H01L27/06 ,  H01M10/0525 ,  H01M10/42 ,  H01M10/48 ,  H01M10/613 ,  H01M10/615 ,  H01M10/625 ,  H01M10/633

CPC classification number: H02J7/007194 ,  G11C11/401 ,  H01M10/0525 ,  H01M10/425 ,  H01M10/4257 ,  H01M10/48 ,  H01M10/486 ,  H01M10/613 ,  H01M10/615 ,  H01M10/625 ,  H01M10/633 ,  H02J7/0029 ,  H02J7/0047 ,  H01L27/0629 ,  H01M2010/4271 ,  H01M2220/20

Abstract: The safety is ensured in such a manner that with an abnormality detection system of a secondary battery, abnormality of a secondary battery is detected, for example, a phenomenon that lowers the safety of the secondary battery is detected early, and a user is warned or the use of the secondary battery is stopped. The abnormality detection system of the secondary battery determines whether the temperature of the secondary battery is within a temperature range in which normal operation can be performed on the basis of temperature data obtained with a temperature sensor. In the case where the temperature of the secondary battery is high, a cooling device is driven by a control signal from the abnormality detection system of the secondary battery. The abnormality detection system of the secondary battery includes at least a memory means. The memory means has a function of holding an analog signal and includes a transistor using an oxide semiconductor for a semiconductor layer.

公开(公告)号：US12040333B2

公开(公告)日：2024-07-16

申请号：US18022329

申请日：2021-08-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Yoshimoto ,  Koji Kusunoki ,  Kazunori Watanabe ,  Susumu Kawashima ,  Marina Hiyama ,  Motoharu Saito

IPC: G09G3/20 ,  H01L27/12

CPC classification number: H01L27/1248 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2330/021

Abstract: A highly functional semiconductor device is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first gate electrode, a first electrode, and a second electrode. The second transistor includes a second semiconductor layer, a second gate electrode, a third electrode, and a fourth electrode. The first gate electrode and the second gate electrode are connected to each other, and the second electrode and the third electrode are connected to each other. A first insulating layer, a second insulating layer, and a second semiconductor layer are stacked over the first semiconductor layer. The first insulating layer is less likely to diffuse hydrogen than the second insulating layer. The second insulating layer contains oxide, the first semiconductor layer contains polycrystalline silicon, and the second semiconductor layer contains a metal oxide. The first transistor is a p-channel transistor and the second transistor is an n-channel transistor.

公开(公告)号：US20240237425A9

公开(公告)日：2024-07-11

申请号：US18548186

申请日：2022-02-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Shinya SASAGAWA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/35

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/353

Abstract: A high-definition and high-resolution display apparatus is provided. A conductive film, a first layer, and a first sacrificial layer are formed. The first layer and the first sacrificial layer are processed to expose part of the conductive film. A second layer and a second sacrificial layer are formed over the first sacrificial layer and the conductive film. The second layer and the second sacrificial layer are processed to expose part of the conductive film. The conductive film is processed to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer. Two insulating films covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, a side surface of the second layer, a side surface and a top surface of the first sacrificial layer, and a side surface and atop surface of the second sacrificial layer are formed. The two insulating films are processed to form a sidewall covering at least the side surface of the first pixel electrode and the side surface of the first layer. The first sacrificial layer and the second sacrificial layer are removed. A common electrode is formed over the first layer and the second layer.

公开(公告)号：US20240237374A9

公开(公告)日：2024-07-11

申请号：US18278199

申请日：2022-02-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromichi GODO ,  Yoshiyuki KUROKAWA ,  Kouhei TOYOTAKA ,  Kazuki TSUDA ,  Satoru OHSHITA ,  Hidefumi RIKIMARU

IPC: H10K39/34 ,  G06F3/01 ,  G09G3/3208 ,  H10K59/65

CPC classification number: H10K39/34 ,  G06F3/013 ,  G09G3/3208 ,  H10K59/65 ,  G09G2330/021 ,  G09G2354/00 ,  G09G2360/14

Abstract: An electronic device having an eye tracking function is provided. The electronic device includes a display device and an optical system. The display device includes a first light-emitting element, a second light-emitting element, a sensor portion, and a driver circuit portion. The sensor portion includes a light-receiving element. The first light-emitting element has a function of emitting infrared light or visible light. The second light-emitting element has a function of emitting light of a color different from that of light emitted from the first light-emitting element. When the first light-emitting element emits infrared light, the light-receiving element has a function of detecting the infrared light that is emitted from the first light-emitting element and reflected by an eyeball of a user. When the first light-emitting element emits visible light, the light-receiving element has a function of detecting the visible light that is emitted from the first light-emitting element and reflected by the eyeball of the user. The first light-emitting element and the second light-emitting element are placed in one layer. The layer where the first light-emitting element and the second light-emitting element are positioned overlaps with the sensor portion.

公开(公告)号：US20240234432A1

公开(公告)日：2024-07-11

申请号：US18616403

申请日：2024-03-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20240231756A9

公开(公告)日：2024-07-11

申请号：US18278451

申请日：2022-02-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Kazuki TSUDA ,  Satoru OHSHITA ,  Hidefumi RIKIMARU

IPC: G06F7/523 ,  G06F7/50 ,  G09G3/3208 ,  G11C11/405 ,  H10B12/00 ,  H10K59/121

CPC classification number: G06F7/523 ,  G06F7/50 ,  G09G3/3208 ,  G11C11/405 ,  H10B12/00 ,  H10K59/1213 ,  H10K59/1216

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a cell array performing a product-sum operation of a first layer and a product-sum operation of a second layer in an artificial neural network, a first circuit from which first data is input to the cell array, and a second circuit to which second data is output from the cell array. The cell array includes a plurality of cells. The cell array includes a first region and a second region. In a first period, the first region is supplied with the t-th (t is a natural number greater than or equal to 2) first data from the first circuit and outputs the t-th second data according to the product-sum operation of the first layer to the second circuit. In the first period, the second region is supplied with the (t+1)-th first data from the first circuit and outputs the (t+1)-th second data according to the product-sum operation of the second layer to the first circuit.