公开(公告)号：US08796791B2

公开(公告)日：2014-08-05

申请号：US13888920

申请日：2013-05-07

Applicant: Axel Franke ,  Patrick Wellner ,  Lars Tebje

Inventor： Axel Franke ,  Patrick Wellner ,  Lars Tebje

IPC: G01P15/08

CPC classification number: B81B3/0075 ,  B81C1/00626 ,  B81C1/00674 ,  B81C2201/0112 ,  B81C2201/014 ,  B81C2203/0109

Abstract: Measures are proposed by which the design freedom is significantly increased in the case of the implementation of the micromechanical structure of the MEMS element of a component, which includes a carrier for the MEMS element and a cap for the micromechanical structure of the MEMS element, the MEMS element being mounted on the carrier via a standoff structure. The MEMS element is implemented in a layered structure, and the micromechanical structure of the MEMS element extends over at least two functional layers of this layered structure, which are separated from one another by at least one intermediate layer.

Abstract translation: 提出的措施是，在实现元件的MEMS元件的微机械结构的情况下，设计自由度显着增加，其包括用于MEMS元件的载体和用于MEMS元件的微机械结构的盖， MEMS元件通过支架结构安装在载体上。 MEMS元件以分层结构实现，并且MEMS元件的微机械结构在该分层结构的至少两个功能层上延伸，所述功能层通过至少一个中间层彼此分离。

公开(公告)号：US08785330B2

公开(公告)日：2014-07-22

申请号：US13682847

申请日：2012-11-21

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Philippe Robert ,  Sophie Giroud

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00134 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0136 ,  B81C1/00603 ,  B81C1/00801 ,  B81C2201/014

Abstract: A method for producing a structure including an active part with a first and a second suspended zone. The method includes machining the front face of a first substrate to define the lateral contours of at least one first suspended zone according to a first thickness less than that of the first substrate forming a stop layer of etching of the first suspended zone under the suspended zone, forming on the front face of the first substrate a sacrificial layer, machining from the rear face of the first substrate up to releasing the sacrificial layer to form at least one second suspended zone to reach the stop layer of the first suspended zone, and releasing the first and second suspended zones.

Abstract translation: 一种用于制造包括具有第一和第二悬浮区的活性部分的结构的方法。 该方法包括加工第一基板的前表面以根据第一厚度小于第一基板的第一厚度的第一厚度来限定至少一个第一悬挂区域的侧向轮廓，该第一基板形成在悬挂区域下方的第一悬浮区域的停止层的蚀刻 在所述第一基板的前表面上形成牺牲层，从所述第一基板的后表面加工到释放所述牺牲层以形成至少一个第二悬浮区以到达所述第一悬浮区的停止层，以及释放 第一和第二个暂停区。

公开(公告)号：US08642370B2

公开(公告)日：2014-02-04

申请号：US13411871

申请日：2012-03-05

Applicant: Ricky Alan Jackson ,  Karen Hildegard Ralston Kirmse ,  Kandis Meinel

Inventor： Ricky Alan Jackson ,  Walter Baker Meinel ,  Karen Hildegard Ralston Kirmse ,  Kandis Meinel

IPC: H01L21/00

CPC classification number: B81C1/00047 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00801 ,  B81C2201/014

Abstract: A process of forming a MEMS device with a device cavity underlapping an overlying dielectric layer stack having an etchable sublayer over an etch-resistant lower portion, including: etching through at least the etchable sublayer of the overlying dielectric layer stack in an access hole to expose a lateral face of the etchable sublayer, covering exposed surfaces of the etchable sublayer by protective material, and subsequently performing a cavity etch. A cavity etch mask may cover the exposed surfaces of the etchable sublayer. Alternatively, protective sidewalls may be formed by an etchback process to cover the exposed surfaces of the etchable sublayer. Alternatively, the exposed lateral face of the etchable sublayer may be recessed by an isotropic etch, than isolated by a reflow operation which causes edges of an access hole etch mask to drop and cover the exposed lateral face of the etchable sublayer.

Abstract translation: 一种形成具有器件空腔的MEMS器件的过程，该器件空腔将覆盖在具有可蚀刻子层的覆盖介质层堆叠覆盖在耐蚀刻下部上，包括：至少蚀刻入口孔中的上覆电介质层堆叠的可蚀刻子层以暴露 可蚀刻子层的侧面，通过保护材料覆盖可蚀刻子层的暴露表面，并随后执行腔蚀刻。 腔蚀刻掩模可以覆盖可蚀刻子层的暴露表面。 或者，可以通过回蚀工艺形成保护侧壁，以覆盖可蚀刻子层的暴露表面。 或者，可蚀刻子层的暴露的侧面可以通过各向同性蚀刻来凹陷，而不是通过回流操作来隔离，这导致访问孔蚀刻掩模的边缘落下并覆盖可蚀刻子层的暴露的侧面。

公开(公告)号：US20130299926A1

公开(公告)日：2013-11-14

申请号：US13946479

申请日：2013-07-19

Applicant: CAVENDISH KINETICS INC.

Inventor： Mickael RENAULT ,  Joseph Damian Gordon LACEY ,  Vikram JOSHI ,  Thomas L. MAGUIRE

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

公开(公告)号：US08563344B2

公开(公告)日：2013-10-22

申请号：US13298571

申请日：2011-11-17

Applicant: Jochen Reinmuth ,  Heiko Stahl

Inventor： Jochen Reinmuth ,  Heiko Stahl

IPC: H01L21/00 ,  H01L29/84 ,  G01P15/125

CPC classification number: B81C1/00571 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C2201/014

Abstract: A method for producing microelectromechanical structures in a substrate includes: arranging at least one metal-plated layer on a main surface of the substrate in a structure pattern; leaving substrate webs open beneath a structure pattern region by introducing first trenches into the substrate perpendicular to a surface normal of the main surface in a region surrounding the structure pattern; coating the walls of the first trenches perpendicular to the surface normal of the main surface with a passivation layer; and introducing cavity structures into the substrate at the base of the first trenches in a region beneath the structure pattern region.

Abstract translation: 在基板中制造微机电结构的方法包括：以结构图案在基板的主表面上布置至少一个金属镀层; 通过在围绕结构图案的区域中垂直于主表面的表面法垂直地将第一沟槽引入到衬底中，使衬底腹板打开在结构图案区域下方; 用钝化层涂覆垂直于主表面的法线的第一沟槽的壁; 以及在结构图案区域下方的区域中在第一沟槽的基部处将空腔结构引入衬底。

公开(公告)号：US20130267049A1

公开(公告)日：2013-10-10

申请号：US13682847

申请日：2012-11-21

Applicant: Commissariat a I'energie atomique et aux energies alternatives

Inventor： Philippe ROBERT ,  Sophie GIROUD

IPC: B81C1/00

CPC classification number: B81C1/00134 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0136 ,  B81C1/00603 ,  B81C1/00801 ,  B81C2201/014

Abstract: Method for producing a structure comprising an active part comprising a first and a second suspended zone of different thicknesses from a first comprising substrate, said method comprising the following steps: a) machining the front face of the first substrate to define the lateral contours of at least one first suspended zone according to a first thickness less than that of the first substrate, b) forming a stop layer of etching of the first suspended zone under said suspended zone, to do this a prior step of removal of the semi-conductor material arranged under the first suspended zone takes place, c) forming on the front face of the first substrate a sacrificial layer, d) machining from the rear face of the first substrate up to releasing said sacrificial layer to form at least one second suspended zone to reach the stop layer of the first suspended zone, e) releasing the first and second suspended zones.

Abstract translation: 一种用于生产结构的方法，所述结构包括活性部分，所述活性部分包括不同厚度的第一和第二悬浮区域，所述第一和第二悬浮区域与第一包含基底的第一悬浮区域相同，所述方法包括以下步骤：a）加工所述第一基底的前表面以限定 根据第一厚度小于第一衬底的第一厚度的至少一个第一悬浮区，b）在所述悬浮区下方形成蚀刻第一悬浮区的停止层，以此去除半导体材料的先前步骤 布置在第一悬挂区域下方，c）在第一基板的正面上形成牺牲层，d）从第一基板的后表面加工到释放所述牺牲层以形成至少一个第二悬挂区域 到达第一悬浮区的停止层，e）释放第一和第二悬浮区。

公开(公告)号：US08513043B2

公开(公告)日：2013-08-20

申请号：US13349696

申请日：2012-01-13

Applicant: Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

Inventor： Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

IPC: H01L21/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

公开(公告)号：US20130147021A1

公开(公告)日：2013-06-13

申请号：US13806787

申请日：2011-06-21

Applicant: Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

Inventor： Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

IPC: H01L21/02 ,  H01L29/02

CPC classification number: H01L21/0228 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/0167 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L29/02

Abstract: A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semiconductor substrate structure (310, 312). A related multi-layer substrate structure is presented.

Abstract translation: 一种用于制造诸如CSOI晶片结构（空腔SOI，绝缘体上硅）的多层衬底结构的方法，包括获得诸如两个硅晶片的第一和第二晶片，其中至少一个晶片可以是 可选地设置有诸如氧化物层（302,404）的材料层，在第一晶片（306,406）的接合侧上形成空腔，优选通过ALD（原子层沉积）沉积材料层，例如 作为薄氧化铝层，在任一晶片上布置成至少在面对另一晶片的位置并且覆盖第一晶片的空腔的至少一部分，例如底部，壁和/或边缘，并且能够停止蚀刻，例如 作为干蚀刻，进入下层材料（308,408），并且将设置有至少上述ALD层的晶片作为中间层结合在一起以形成多层半导体衬底结构（310,312）。 提出了相关的多层基板结构。

公开(公告)号：US20130062713A1

公开(公告)日：2013-03-14

申请号：US13699614

申请日：2011-05-25

Applicant: Masahiro Sakuragi ,  Toma Fujita ,  Mizuho Okada

Inventor： Masahiro Sakuragi ,  Toma Fujita ,  Mizuho Okada

IPC: H01L29/84 ,  H01L21/306

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/014 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073 ,  H01L21/76264 ,  H01L21/76283

Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization.[Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.

Abstract translation: 提供能够实现成本降低和小型化的压力传感器。 解决方法压力传感器1包括设置有基准压力室8的硅基板2，由硅基板2的一部分构成的振动板10，其形成在硅基板2的表层部分上，以分隔基准 压力室8和形成在隔膜10的与基准压力室8相对的下表面上的蚀刻停止层9.在隔膜10上形成有与基准压力室8连通的通孔11，填料13 布置在通孔11中。

公开(公告)号：US08282845B2

公开(公告)日：2012-10-09

申请号：US12496748

申请日：2009-07-02

Applicant: Dirk Marteen Knotter ,  Arnoldus Den Dekker ,  Ronald Koster ,  Robertus T. F. Van Schaijk

Inventor： Dirk Marteen Knotter ,  Arnoldus Den Dekker ,  Ronald Koster ,  Robertus T. F. Van Schaijk

IPC: C03C15/00

CPC classification number: B81C1/00595 ,  B81C2201/014

Abstract: The present invention relates to a method for etching a feature in an etch layer that has a thickness of more than 2 micrometers from an initial contact face for the etchant to an opposite bottom face of the etch layer, at a lateral feature position in the etch layer and with a critical lateral extension at the bottom face. The method includes fabricating, at the lateral feature position on the substrate layer, a mask feature from a mask-layer material, the mask feature having the critical lateral extension. The etch layer is deposited to a thickness of more than 2 micrometers, on the mask feature and on the substrate layer, from an etch-layer material, which is selectively etchable relative to the mask-layer material. Then, the feature is etched in the etch layer at the first lateral position with a lateral extension larger than the critical lateral extension, using an etchant that selectively removes the etch layer-material relative to the mask-layer material.

Abstract translation: 本发明涉及一种用于蚀刻蚀刻层中的特征的方法，该蚀刻层的特征厚度大于2微米，从蚀刻剂的初始接触面到蚀刻层的相对底面，蚀刻层的横向特征位置 并且在底面具有临界横向延伸。 该方法包括在基底层上的横向特征位置处制造掩模层材料的掩模特征，掩模特征具有临界横向延伸。 蚀刻层在相对于掩模层材料可选择性蚀刻的蚀刻层材料上沉积到掩模特征和基底层上大于2微米的厚度。 然后，使用相对于掩模层材料选择性去除蚀刻层材料的蚀刻剂，在第一横向位置处蚀刻该特征，其横向延伸大于临界横向延伸。