公开(公告)号：US20160068969A1

公开(公告)日：2016-03-10

申请号：US14479030

申请日：2014-09-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Alan Tso ,  Anchuan Wang ,  Nitin K. Ingle ,  Hiroshi Hamana

IPC: C23F4/00 ,  H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/32357 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02063 ,  H01L21/02071

Abstract: Methods of preventing microcontamination from developing on substrates when the substrates are removed from a substrate processing system are described. During processing in the substrate processing mainframe, fluorine adatoms are present (perhaps left by a prior process in the mainframe) on the surface of the substrate. The fluorine adatoms develop into microcontamination upon exposure to typical atmospheric conditions. A hydrogen-containing precursor is flowed into a remote plasma region to form plasma effluents. The plasma effluents are flowed into a substrate processing region to remove or react with the fluorine adatoms in a treatment operation. Following the treatment operation, the concentration of fluorine on or near the surface is reduced and the development of microcontamination after breaking vacuum is curtailed.

Abstract translation: 描述了当从基板处理系统移除基板时防止微粒化在基板上显影的方法。 在基板处理主机中的处理期间，在基板的表面上存在氟吸附原子（可能留在主机中的先前处理过程）。 氟吸附原子在暴露于典型的大气条件下会发展成微生物。 含氢前体流入远程等离子体区域以形成等离子体流出物。 在处理操作中，等离子体流出物流入基底处理区域以除去或与氟吸附原子反应。 在处理操作之后，表面上或附近的氟浓度降低，并且减少了真空后的微生物的发展。

公开(公告)号：US20160043099A1

公开(公告)日：2016-02-11

申请号：US14452378

申请日：2014-08-05

Applicant: Applied Materials, Inc.

Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Shankar Venkataraman ,  Nitin K. Ingle

IPC: H01L27/115 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L27/11582 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/764

Abstract: Methods of forming air gaps in a 3-d flash memory cell using only gas-phase etching techniques are described. The methods include selectively gas-phase etching tungsten deposited into the stack structure to separate the tungsten levels. Other metals than tungsten may be used. The methods also include selectively etching silicon oxide from between the tungsten levels to make room for vertically spaced air gaps. A nonconformal silicon oxide layer is then deposited to trap the air gaps. Both tungsten removal and silicon oxide removal use remotely excited fluorine-containing apparatuses attached to the same mainframe to facilitate performing both operations without an intervening atmospheric exposure. The nonconformal silicon oxide may be deposited inside or outside the mainframe.

Abstract translation: 描述了仅使用气相蚀刻技术在3-d闪存单元中形成气隙的方法。 这些方法包括选择性地将钨沉积到堆叠结构中的钨相蚀刻钨以分离钨含量。 可以使用除钨以外的其他金属。 所述方法还包括从钨水平之间选择性地蚀刻氧化硅以为垂直间隔的气隙腾出空间。 然后沉积非共形氧化硅层以捕获气隙。 除钨和氧化硅除去都使用连接在同一主机上的远程激发的含氟装置，以便于在没有中间大气暴露的情况下进行这两种操作。 非共形氧化硅可以沉积在主机内部或外部。

公开(公告)号：US09236266B2

公开(公告)日：2016-01-12

申请号：US14287850

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻曝露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

公开(公告)号：US09236265B2

公开(公告)日：2016-01-12

申请号：US14270060

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Jingjing Xu

IPC: H01L21/3065 ,  H01L29/161 ,  H01L29/165

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32724 ,  H01L29/161 ,  H01L29/165

Abstract: Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing Si(1-X)GeX (including germanium i.e. X=1) faster than Si(1-Y)GeY, for all X>Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于硅选择性地蚀刻硅锗的方法。 这些方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅锗反应。 等离子体流出物与暴露的表面反应并选择性地去除硅锗，同时非常缓慢地除去其它暴露的材料。 一般来说，对于所有的X> Y，这些方法可用于比Si（1-Y）GeY更快地除去Si（1-X）GeX（包括锗，即X = 1）。 在一些实施例中，硅锗蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

公开(公告)号：US20150371864A1

公开(公告)日：2015-12-24

申请号：US14309364

申请日：2014-06-19

Applicant: Applied Materials, Inc.

Inventor： Ching-Mei Hsu ,  Nitin K. Ingle ,  Hiroshi Hamana ,  Anchuan Wang

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.

Abstract translation: 描述了在图案化异质结构上蚀刻碳膜的方法，并且包括使用远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体和含氧前体，产生的等离子体流出物流入基板处理区域。 等离子体流出物比硅，氮化硅，碳化硅，氮化碳和氧化硅更快地蚀刻碳膜。

公开(公告)号：US20150345029A1

公开(公告)日：2015-12-03

申请号：US14289190

申请日：2014-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Xikun Wang ,  Nitin K. Ingle

IPC: C23F1/12 ,  C23F1/02

CPC classification number: C23F1/12 ,  C23F4/00

Abstract: Methods are described herein for etching metal films, such as cobalt and nickel, which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials.

Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜，例如钴和镍的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。

公开(公告)号：US20150345028A1

公开(公告)日：2015-12-03

申请号：US14288696

申请日：2014-05-28

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: C23F1/12 ,  H01L21/3213 ,  H01J37/32

CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

公开(公告)号：US09190293B2

公开(公告)日：2015-11-17

申请号：US14215417

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/4763 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J2237/334

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括具有高纵横比沟槽的图案化衬底的离子轰击。 离子轰击包括含氟离子，并且可以在穿过沟槽外部的水平衬套部分但在沟槽的开口附近之前停止离子轰击。 然后，该方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并从沟槽的外部和沟槽的侧壁上除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。

公开(公告)号：US20150235863A1

公开(公告)日：2015-08-20

申请号：US14703333

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US20150129545A1

公开(公告)日：2015-05-14

申请号：US14512973

申请日：2014-10-13

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: C23F1/12 ,  H01J37/32 ,  C23F1/02

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。 在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。