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    Semiconductor light-emitting device with double-sided passivation
    242.
    发明授权
    Semiconductor light-emitting device with double-sided passivation 有权
    具有双面钝化的半导体发光器件

    公开(公告)号：US07943942B2

    公开(公告)日：2011-05-17

    申请号：US12093508

    申请日：2008-03-25

    Applicant: Fengyi Jiang ,  Junlin Liu ,  Li Wang

    Inventor： Fengyi Jiang ,  Junlin Liu ,  Li Wang

    IPC: H01L21/00

    CPC classification number: H01L33/44 ,  H01L21/6835 ,  H01L33/0079 ,  H01L33/405 ,  H01L2221/6835 ,  H01L2221/68359

    Abstract: A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.

    Abstract translation: 发光器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂层上方的第二掺杂半导体层和位于第一和第二掺杂层之间的多量子阱（MQW）有源层 掺杂层。 该器件还包括耦合到第一掺杂层的第一电极和位于第一电极和第一掺杂层之间的除欧姆接触区域之外的区域中的第一钝化层。 第一钝化层使第一电极与第一掺杂层的边缘基本绝缘，从而减少表面复合。 该器件还包括耦合到第二掺杂层的第二电极和基本上覆盖第一和第二掺杂层，MQW有源层和第二掺杂层的水平表面的侧壁的第二钝化层。

    MEMORY CELL ARRANGEMENTS; MEMORY CELL READER; METHOD FOR DETERMINING A MEMORY CELL STORAGE STATE
    245.
    发明申请
    MEMORY CELL ARRANGEMENTS; MEMORY CELL READER; METHOD FOR DETERMINING A MEMORY CELL STORAGE STATE 审中-公开
    记忆细胞安排; 记忆体读取器 用于确定存储单元存储状态的方法

    公开(公告)号：US20110058408A1

    公开(公告)日：2011-03-10

    申请号：US12876633

    申请日：2010-09-07

    Applicant: HAO MENG ,  Guchang Han ,  Li Wang ,  Bo Liu

    Inventor： HAO MENG ,  Guchang Han ,  Li Wang ,  Bo Liu

    IPC: G11C11/16

    CPC classification number: G11C7/02 ,  G11C11/1675 ,  G11C11/1693

    Abstract: A memory cell arrangement is provided including a magnetoresistive memory cell; and a frequency determiner configured to determine a spin precession frequency provided by the magnetoresistive memory cell; and a storage state determiner configured to determine the magnetoresistive memory cell storage state of the magnetoresistive memory cell based on the determined spin precession frequency.

    Abstract translation: 提供了包括磁阻存储单元的存储单元布置; 以及频率确定器，被配置为确定由所述磁阻存储单元提供的自旋进动频率; 以及存储状态确定器，被配置为基于所确定的自旋进动频率来确定磁阻存储单元的磁阻存储单元存储状态。

    METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES
    246.
    发明申请
    METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES 有权
    用于制造稳定的发光二极管的方法

    公开(公告)号：US20110049540A1

    公开(公告)日：2011-03-03

    申请号：US12160044

    申请日：2008-03-26

    Applicant: Li Wang ,  Fengyi Jiang

    Inventor： Li Wang ,  Fengyi Jiang

    IPC: H01L33/32 ,  H01L21/18

    CPC classification number: H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.

    Abstract translation: 本发明的一个实施例提供一种制造发光二极管（LED）的方法。 该方法包括在导电基板上制造基于InGaAlN的多层LED结构。 该方法还包括通过多层LED结构的有源区蚀刻预定图案的凹槽。 凹槽将发光区域与非发光区域分开。 此外，该方法包括在发光和非发光区域上沉积电极材料，从而形成电极。 此外，该方法包括沉积覆盖发光和非发光区域的钝化层。 此外，该方法包括去除电极上的钝化层，以使被电极材料和钝化层覆盖的非发光区域比发光区域和电极高，从而保护发光区域， 发射区域与测试设备接触。

    SUBSTRATES AND METHODS OF FABRICATING DOPED EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS
    247.
    发明申请
    SUBSTRATES AND METHODS OF FABRICATING DOPED EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS 审中-公开
    基质和方法制备具有顺序渗透性的掺杂的外延硅碳化物结构

    公开(公告)号：US20110042686A1

    公开(公告)日：2011-02-24

    申请号：US12543478

    申请日：2009-08-18

    Applicant: Jisheng Han ,  Sima Dimitrijev ,  Li Wang ,  Philip Tanner ,  Leonie Hold ,  Alan Iacopi ,  Fred Kong ,  Herbert Barry Harrison

    Inventor： Jisheng Han ,  Sima Dimitrijev ,  Li Wang ,  Philip Tanner ,  Leonie Hold ,  Alan Iacopi ,  Fred Kong ,  Herbert Barry Harrison

    IPC: H01L29/24 ,  H01L21/04

    CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/02579

    Abstract: Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including doped epitaxial layers (e.g., P-doped silicon carbide epitaxial layers), by supplying sources of silicon and carbon with sequential emphasis. In some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source and a dopant, and purging other gaseous materials. In some embodiments, the presence of the silicon source can be independent of the presence of the carbon source and/or the dopant.

    Abstract translation: 本发明的实施例一般涉及半导体和半导体制造技术，更具体地涉及用于形成碳化硅结构的器件，集成电路，衬底和方法，包括掺杂的外延层（例如，P掺杂的碳化硅外延层），由 依次强调硅和碳的供应来源。 在一些实施例中，形成碳化硅外延层的方法可以包括在硅源的存在下沉积层，以及在沉积层之后吹扫气态材料。 此外，该方法可以包括在碳源和掺杂剂的存在下将层转化为碳化硅的子层，并且清除其它气态材料。 在一些实施例中，硅源的存在可以独立于碳源和/或掺杂剂的存在。

    Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
    248.
    发明授权
    Method of fabrication InGaAIN film and light-emitting device on a silicon substrate 有权
    在硅衬底上制造InGaFET膜和发光器件的方法

    公开(公告)号：US07888779B2

    公开(公告)日：2011-02-15

    申请号：US11910735

    申请日：2006-04-14

    Applicant: Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

    Inventor： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

    IPC: H01L29/06 ,  H01L21/203

    CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/78 ,  H01L33/0095

    Abstract: There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.

    Abstract translation: 提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为 大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。 该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。 同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。

    COMPOSITION CONTAINING ROTIGOTINE AND USE THEREOF AND TRANSDERMAL PATCH CONTAINING THE COMPOSITION
    249.
    发明申请
    COMPOSITION CONTAINING ROTIGOTINE AND USE THEREOF AND TRANSDERMAL PATCH CONTAINING THE COMPOSITION 有权
    含有ROTIGOTINE的组合物及其用途及含有组合物的透皮贴剂

    公开(公告)号：US20110027345A1

    公开(公告)日：2011-02-03

    申请号：US12667915

    申请日：2008-07-03

    Applicant: Shuming Wang ,  Huiyong Xue ,  Li Wang ,  Enhong Zhang ,  Hongjun Lian ,  Xiaoyan Shi ,  Guohua Chi ,  Yucheng Lu ,  Xiquan Liu ,  Li Song ,  Xuying Zhong ,  Hongguang Du

    Inventor： Shuming Wang ,  Huiyong Xue ,  Li Wang ,  Enhong Zhang ,  Hongjun Lian ,  Xiaoyan Shi ,  Guohua Chi ,  Yucheng Lu ,  Xiquan Liu ,  Li Song ,  Xuying Zhong ,  Hongguang Du

    IPC: A61K31/381 ,  A61K9/00 ,  A61K9/70 ,  A61P25/16

    CPC classification number: A61K9/7023 ,  A61K9/7053 ,  A61K9/7061 ,  A61K9/7069 ,  A61K31/381

    Abstract: The present invention relates to a composition containing Rotigotine and the use thereof in the manufacture of a Rotigotine-containing transdermal patch, wherein said composition is based on a matrix mixture system formed from a combination of an acrylic pressure-sensitive adhesive with a silicone pressure-sensitive adhesive, and polyvinylpyrrolidone which are present in a particular weight ratio, wherein (1) the acrylic pressure-sensitive adhesive is present in an amount of about 1-25% by weight in the matrix mixture system, (2) the silicone pressure-sensitive adhesive is present in an amount of about 65-98% by weight in the matrix mixture system, and (3) the polyvinylpyrrolidone is present in an amount of about 1-10% by weight in the matrix mixture system, and comprises 1-40% of Rotigotine on the basis of the total weight of the composition. The present invention further relates to an improved transdermal patch containing Rotigotine comprising said composition. Said patch has improved properties in the solubility, release and initial penetration level of Rotigotine.

    Abstract translation: 本发明涉及含有罗替高汀的组合物及其在制造含罗替尼汀的透皮贴剂中的用途，其中所述组合物是基于由丙烯酸压敏粘合剂与硅氧烷压敏粘合剂组合形成的基质混合物体系， 敏感性粘合剂和聚乙烯吡咯烷酮，其特征在于：（1）所述丙烯酸类压敏粘合剂在所述基质混合物体系中以约1-25％（重量）的量存在，（2） 在基质混合体系中，敏感粘合剂的存在量为约65-98重量％，（3）在基质混合体系中，聚乙烯吡咯烷酮的存在量为约1-10重量％，并且包含1- 基于组合物总重量的罗替高汀为40％。 本发明还涉及包含所述组合物的含有罗替高汀的改良透皮贴剂。 所述贴剂具有改善的罗替戈汀的溶解度，释放和初始渗透水平的性质。

    REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF
    250.
    发明申请
    REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF 有权
    调节性T细胞介质蛋白及其用途

    公开(公告)号：US20110027278A1

    公开(公告)日：2011-02-03

    申请号：US12732371

    申请日：2010-03-26

    Applicant: Randolph J. Noelle ,  Li Wang

    Inventor： Randolph J. Noelle ,  Li Wang

    IPC: A61K39/395 ,  A61K38/16 ,  C07K16/00 ,  C12N5/02 ,  C40B30/04

    CPC classification number: C07K16/2827 ,  A61K38/00 ,  A61K2039/505 ,  C07K14/70596 ,  C07K2319/00 ,  C07K2319/30 ,  G01N33/505 ,  Y02A50/412 ,  Y02A50/423

    Abstract: The present invention relates to novel regulatory T cell proteins. One protein, designated PD-L3, resembles members of the PD-L1 family, and co-stimulates αCD3 proliferation of T cells in vitro. A second, TNF-like, protein has also been identified as being upregulated upon αCD3/αGITR stimulation. This protein has been designated Treg-sTNF. Proteins, antibodies, activated T cells and methods for using the same are disclosed.In particular methods of using these proteins and compounds, preferably antibodies, which bind or modulate (agonize or antagonize) the activity of these proteins, as immune modulators and for the treatment of cancer, autoimmune disease, allergy, infection and inflammatory conditions, e.g. multiple sclerosis is disclosed

    Abstract translation: 本发明涉及新型调节性T细胞蛋白。 称为PD-L3的一种蛋白质类似于PD-L1家族的成员，并且在体外共同刺激T细胞的αCD3增殖。 第二种TNF样蛋白也被鉴定为在αCD3/αGITR刺激下上调。 该蛋白质已被命名为Treg-sTNF。 公开了蛋白质，抗体，活化的T细胞和使用它们的方法。 特别是使用这些蛋白质和化合物（优选抗体）的方法，其结合或调节（激动或拮抗）这些蛋白质的活性，作为免疫调节剂和用于治疗癌症，自身免疫疾病，变态反应，感染和炎性病症，例如， 公开了多发性硬化

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