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公开(公告)号:US20240196712A1
公开(公告)日:2024-06-13
申请号:US18276077
申请日:2022-02-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Shunpei YAMAZAKI , Kenichi OKAZAKI , Daiki NAKAMURA , Rai SATO
IPC: H10K59/80 , H10K59/124 , H10K59/127 , H10K59/40 , H10K59/65
CPC classification number: H10K59/8791 , H10K59/124 , H10K59/127 , H10K59/40 , H10K59/65
Abstract: A display apparatus with high display quality is provided. A highly reliable display apparatus is provided. A display apparatus with low power consumption is provided. A display apparatus with a high resolution is provided. A display apparatus with high contrast is provided. The display apparatus includes a plurality of pixels over a first insulating layer. Each of the plurality of pixels includes a first conductive layer provided along an opening portion of the first insulating layer, a second insulating layer over the first conductive layer, an EL layer over the first conductive layer and the second insulating layer, and a common electrode over the EL layer. The second insulating layer is over and in contact with the first conductive layer and placed below the EL layer. The first conductive layers of adjacent pixels are separated by a third insulating layer containing an inorganic material and a fourth insulating layer containing an organic material. A side surface of the first conductive layer and a side surface of the EL layer each include a region in contact with the third insulating layer. The fourth insulating layer is over and in contact with the third insulating layer and placed below the common electrode.
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公开(公告)号:US20240196688A1
公开(公告)日:2024-06-13
申请号:US18286840
申请日:2022-04-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Daisuke KUBOTA , Ryo HATSUMI , Taisuke KAMADA , Koji KUSUNOKI
IPC: H10K59/35 , H10K39/34 , H10K102/00
CPC classification number: H10K59/353 , H10K39/34 , H10K2102/311
Abstract: A high-resolution display apparatus having a function of detecting light is provided. The display apparatus includes a light-receiving device and a light-emitting device, the light-receiving device includes a first electrode, an active layer over the first electrode, and a second electrode over the active layer, the light-emitting device includes a third electrode, a light-emitting layer over the third electrode, and the second electrode over the light-emitting layer, and a part of the active layer and a part of the light-emitting layer overlap with each other in an outer side of the first electrode and an outer side of the third electrode in a top view.
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公开(公告)号:US20240186511A1
公开(公告)日:2024-06-06
申请号:US18442586
申请日:2024-02-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takuya MIWA , Yumiko YONEDA , Teppei OGUNI
IPC: H01M4/58 , C01B25/45 , H01M4/02 , H01M10/0525
CPC classification number: H01M4/5825 , C01B25/45 , C01P2002/72 , C01P2004/03 , C01P2004/62 , C01P2004/64 , C01P2006/40 , H01M2004/028 , H01M10/0525
Abstract: A composite oxide with high diffusion rate of lithium is provided. Alternatively, a lithium-containing complex phosphate with high diffusion rate of lithium is provided. Alternatively, a positive electrode active material with high diffusion rate of lithium is provided. Alternatively, a lithium ion battery with high output is provided. Alternatively, a lithium ion battery that can be manufactured at low cost is provided. A positive electrode active material is formed through a first step of mixing a lithium compound, a phosphorus compound, and water, a second step of adjusting pH by adding a first aqueous solution to a first mixed solution formed in the first step, a third step of mixing an iron compound with a second mixed solution formed in the second step, a fourth step of performing heat treatment under a pressure more than or equal to 0.1 MPa and less than or equal to 2 MPa at a highest temperature more than 100° C. and less than or equal to 119° C. on a third mixed solution formed in the third step with a pH of more than or equal to 3.5 and less than or equal to 5.0.
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公开(公告)号:US20240185746A1
公开(公告)日:2024-06-06
申请号:US18502413
申请日:2023-11-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kensuke YOSHIZUMI , Ryota TAJIMA
CPC classification number: G09F21/049 , B60J3/0204 , B60R11/0235 , G09G3/001 , G09G3/20 , H04N7/183 , B60R2011/0028 , B60R2011/0035 , B60R2011/0082 , B60Y2400/92 , G09G2354/00 , G09G2380/02 , G09G2380/10 , H10K2102/311
Abstract: A display device or a driving support system which enables a driver to obtain information easily is provided. A display device or a driving support system which is unlikely to impose a burden on a driver is provided. A display device or a driving support system which is suitable for space saving is provided. A display device or a driving support system which is capable of large-area display is provided. A display device or a driving support system which does not impair the aesthetic appearance of the car interior is provided. The display device includes a display panel which has flexibility and can be transformed between a first form and a second form, and a driving means having a function of reversibly changing the display panel between the first form and the second form. The first form is a form in which a display surface of the display panel is suspended, and the second form is a form in which the display panel is stored upward.
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公开(公告)号:US12002876B2
公开(公告)日:2024-06-04
申请号:US18084912
申请日:2022-12-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Kenichi Okazaki , Junichi Koezuka , Tomonori Nakayama , Motoki Nakashima
IPC: H01L29/66 , H01L27/12 , H01L29/04 , H01L29/24 , H01L29/417 , H01L29/49 , H01L29/786 , H01L29/78
CPC classification number: H01L29/66969 , H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/41733 , H01L29/4908 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78696 , H01L29/7849 , H01L29/786
Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
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公开(公告)号:US12002818B2
公开(公告)日:2024-06-04
申请号:US18215987
申请日:2023-06-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
IPC: H01L27/14 , G02F1/1343 , G02F1/1345 , G02F1/1368 , H01L27/12
CPC classification number: H01L27/124 , G02F1/134309 , G02F1/13454 , G02F1/1368 , H01L27/1225 , H01L27/1255 , G02F2202/10
Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
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公开(公告)号:US12002529B2
公开(公告)日:2024-06-04
申请号:US18205000
申请日:2023-06-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Atsushi Umezaki
IPC: G11C19/18 , G09G3/36 , G09G3/3266
CPC classification number: G11C19/184 , G09G3/3648 , G09G3/3677 , G09G3/3266 , G09G2300/0426 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , G09G2320/02 , G09G2320/043 , G09G2330/021 , G09G2330/023
Abstract: In a semiconductor device and a shift register, low noise is caused in a non-selection period and a transistor is not always on. First to fourth transistors are provided. One of a source and a drain of the first transistor is connected to a first wire, the other of the source and the drain thereof is connected to a gate electrode of the second transistor, and a gate electrode thereof is connected to a fifth wire. One of a source and a drain of the second transistor is connected to a third wire and the other of the source and the drain thereof is connected to a sixth wire.
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公开(公告)号:US12001634B2
公开(公告)日:2024-06-04
申请号:US17919659
申请日:2021-04-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Satoshi Yoshimoto , Kazunori Watanabe , Susumu Kawashima , Ryo Yamauchi , Motoharu Saito , Koji Kusunoki , Shunpei Yamazaki
IPC: G06F3/042 , G06T7/20 , G09G3/3233
CPC classification number: G06F3/042 , G06T7/20 , G09G3/3233 , G06T2207/20081 , G09G2300/08 , G09G2310/08 , G09G2330/023
Abstract: A display apparatus capable of performing authentication in a short time is provided. The display apparatus includes a first display portion where first pixels are arranged in a matrix, a second display portion where second pixels are arranged in a matrix, first and second row driver circuits, and a control circuit. Each of the first and the second pixels includes a light-receiving element. The first and the second pixels each have a function of acquiring imaging data by using the light-receiving element. The first and the second row driver circuits each have a function of selecting the first and the second pixels which read out the imaging data. The control circuit has a function of sequentially driving the first and the second row driver circuits in a first mode, and has a function of driving one of the first and the second row driver circuits on the basis of the imaging data in the second mode. Each of the scan rates of the first and the second row driver circuits in the first mode is higher than the scan rate of the first or the second row driver circuit in the second mode.
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公开(公告)号:US12001241B2
公开(公告)日:2024-06-04
申请号:US18082679
申请日:2022-12-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Jun Koyama
IPC: H01L29/786 , G06F1/16 , G06F1/26 , G11C5/06
CPC classification number: G06F1/1635 , G06F1/1626 , G06F1/1637 , G06F1/263 , G11C5/063 , H01L29/786
Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.
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公开(公告)号:US20240179938A1
公开(公告)日:2024-05-30
申请号:US18404122
申请日:2024-01-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kenichi OKAZAKI , Shingo EGUCHI , Hiroki ADACHI
IPC: H10K50/822 , H10K50/13 , H10K102/00
CPC classification number: H10K50/822 , H10K50/13 , H10K2102/341
Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.
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