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公开(公告)号：US20240278914A1
公开(公告)日：2024-08-22
申请号：US18651197
申请日：2024-04-30
Inventor： Danny L. Plemons , Mark J. Dube
IPC: B64D1/02
CPC classification number: B64D1/02
Abstract: A chaff dispensing system that is provided on an aircraft and includes a container, a dispensing assembly, a controller, and a volume of chaff material. The container has a first end, a second end, and a chamber that extends between the first and second ends, and the second end defines an ejection port. The dispensing assembly is operably engaged to the container. The controller is electrically connected to the dispensing assembly. The volume of chaff material is disposed inside the chamber of the container. The volume of chaff material is dispensed by the dispensing assembly operably through the controller in metered volumes of chaff material. In addition, a first volume of chaff material may be metered at a first time and a second volume chaff material may be metered at a second time in which the second volume of chaff material is different than the first volume of chaff material.
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公开(公告)号：US20240257322A1
公开(公告)日：2024-08-01
申请号：US18102872
申请日：2023-01-30
Inventor： John J. Henebury , Lori L. Vinciguerra , Jaime A. Caicedo Baquerizo , Gregory W. Sletterink , Robin L. Brown
IPC: G06T5/00
CPC classification number: G06T5/92
Abstract: Systems and methods of image enhancement comprising: obtaining image data; analyzing the image data and gathering relevant statistics thereon, at least within a first region of interest and a second region of interest; using the gathered statistics corresponding to the first region of interest, configuring a first contrast enhancement module to perform contrast enhancement of at least a first portion of the image data; using the gathered statistics corresponding to the second region of interest, configuring a second contrast enhancement module to perform contrast enhancement of at least a second portion of the image data; and combining the contrast-enhanced image data to form a complete image
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公开(公告)号：US20240250430A1
公开(公告)日：2024-07-25
申请号：US18101450
申请日：2023-01-25
Inventor： Jean L. Kubwimana , Alexander D. Johnson , Jacob Tamasy , James F. Fung , Matthew J. Ney
CPC classification number: H01Q9/0414 , H01Q1/48 , H01Q9/045 , H01Q21/065
Abstract: An antenna assembly includes a first dielectric material, a ground plane above the first dielectric material, and two or more patch antennas above the ground plane. In an example, the ground plane has a first aperture slot, and a second aperture slot that is non-intersecting with the first aperture slot. The antenna assembly further includes a second dielectric material separating the two or more patch antennas from the ground plane. In an example, the first dielectric material comprises a printed circuit board (PCB). In some examples, the ground plane and the two or more patch antennas are manufactured using additive manufacturing techniques (such as three-dimensional printing techniques), and in some such examples, the second dielectric material includes dielectric foam. For example, the dielectric foam supports the two or more patch antennas above the ground plane.
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公开(公告)号：US20240243074A1
公开(公告)日：2024-07-18
申请号：US18153470
申请日：2023-01-12
Inventor： Jeffrey Fitzgerald
CPC classification number: H01L23/552 , H01L21/561 , H01L21/568 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/19 , H01L24/95 , H01L25/105 , H01L25/18 , H01L25/50 , H01L2224/05551 , H01L2224/05552 , H01L2224/05555 , H01L2224/05571 , H01L2224/0603 , H01L2224/06051 , H01L2224/0616 , H01L2224/08237 , H01L2224/08238 , H01L2224/19 , H01L2224/95001 , H01L2225/1035
Abstract: A semiconductor package that may comprise a mixed signal die having a first surface operably engaged with an interconnect and a second surface opposite to the first surface, and at least one set of input/output (IO) connections on the mixed signal die. The at least one set of IO connections is configured to be electromagnetically shielded in a non-linear geometry from at least another set of IO connections that is different from the at least one set of IO connections.
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公开(公告)号：US20240230900A1
公开(公告)日：2024-07-11
申请号：US18090974
申请日：2022-12-29
Inventor： Michael J. DeWeert
CPC classification number: G01S17/18 , G01B11/162 , G01S17/89
Abstract: An interferometry system and method thereof detects movements of the surface of a body of water in response to acoustic waves generated from a sub-surface source interacting with the surface. Movements of the surface of the body of water are viewed over multiple interferometric images that can be pieced together to generate an interferometric movie or video. The interferometric movie or video depicts the movement of the acoustic wave propagating through the viewing area. Once the movement of the acoustic wave propagating through the viewing area is known, then back propagation techniques are employed to determine or triangulate the location of the sub-surface source that generated the acoustic wave.
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Patent Agency Ranking
公开(公告)号：US20240221113A1
公开(公告)日：2024-07-04
申请号：US18149416
申请日：2023-01-03
Inventor： Bingcai Zhang
IPC: G06T3/40
CPC classification number: G06T3/4053 , G06T3/4046
Abstract: System and methods for generating super resolution images from geospatial images having any number of bands. A super resolution model, which uses deep convolution neural networks (DCNNs), is trained using individual image bands, a large crop size or tile size of 512×512 pixels, and a de-noise algorithm. Applying one or more algorithms to maintain the original color of the image bands improves the quality metrics of the super resolution images as measured by PSNR (peak signal-to-noise ratio) and SSIM (structural similarity index measure) of super resolution images. Further applying one or more algorithms to remove border effects introduced during the disclosed process reduces and/or eliminates seam lines between tiles and enhances the overall accuracy of the super resolution images.
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公开(公告)号：US20240200903A1
公开(公告)日：2024-06-20
申请号：US18080052
申请日：2022-12-13
Inventor： Paul D. Zemany
Abstract: Techniques are provided for guiding a projectile. A methodology implementing the techniques according to an embodiment includes generating a roll command based on a roll angle obtained from a steering map that causes a change in range and cross range of the projectile that results in a ground motion closest to a desired ground motion. The method also includes calculating a remaining maximum maneuver distance for the projectile, over a time period extending from the current time of flight to the end of flight. The calculation is based on integration a series of maximum maneuvers, obtained from the steering map, at time intervals within the time period. The method further includes generating a lift command for the projectile based on: distance between the target location and an impact point prediction (IPP) calculated at the current time of flight; an error estimate of the IPP; and the remaining maximum maneuver distance.
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公开(公告)号：US20240188261A1
公开(公告)日：2024-06-06
申请号：US18073179
申请日：2022-12-01
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: H05K9/0005 , C09D5/006 , C23C16/306 , C23C16/52 , C30B17/00 , C30B29/42 , C30B29/602 , C30B35/002
Abstract: GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C./cm and 3° C./cm, and the directional solidification can be at a rate of between 0.25 mm/h and 2.5 mm/h.
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公开(公告)号：US20240184015A1
公开(公告)日：2024-06-06
申请号：US18073177
申请日：2022-12-01
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: G02B1/02 , C30B25/18 , C30B29/42 , C30B29/44 , C30B31/06 , H05K9/0081 , H05K9/0094
Abstract: IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the “EL2” defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.
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公开(公告)号：US20240183065A1
公开(公告)日：2024-06-06
申请号：US18073228
申请日：2022-12-01
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: C30B25/186 , C30B29/42 , C30B29/44 , C30B31/06 , C30B33/06
Abstract: A method of growing large GaAs or GaP IR window slabs by HVPE, and in embodiments by LP-HVPE, includes obtaining a plurality of thin, single crystal, epitaxial-quality GaAs or GaP wafers, cleaving the wafers into tiles having ultra-flat, atomically smooth, substantially perpendicular edges, and then butting the tiles together to form an HVPE substrate larger than 4 inches for GaP, and larger than 8 inches or even 12 inches for GaAs. Subsequent HVPE growth causes the individual tiles to fuse by optical bonding into a large “tiled” single crystal wafer, while any defects nucleated at the tile boundaries are healed, causing the tiles to merge with themselves and with the slab with no physical boundaries, and no degradation in optical quality. A dopant such as Si can be added to the epitaxial gases during the final HVPE growth stage to produce EMI shielded GaAs windows.
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