公开(公告)号：US07429402B2

公开(公告)日：2008-09-30

申请号：US11009331

申请日：2004-12-10

Applicant: Srinivas Gandikota ,  Madhu Moorthy ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Mei Chang ,  Kavita Shah ,  Seshadri Ganguli

Inventor： Srinivas Gandikota ,  Madhu Moorthy ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Mei Chang ,  Kavita Shah ,  Seshadri Ganguli

IPC: C23C16/00 ,  H01L21/20 ,  H01L21/469

CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  Y10T428/12771 ,  Y10T428/12812 ,  Y10T428/12861 ,  Y10T428/12875

Abstract: In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.

Abstract translation: 在一个实施例中，提供了一种在衬底上沉积含钨膜的方法，其包括在衬底上沉积阻挡层，例如含有钛或钽的阻挡层，并在阻挡层上沉积钌层。 该方法还包括在钌层上沉积钨成核层并在钨成核层上沉积钨体层。 优选通过ALD工艺，通过ALD工艺，CVD工艺或PVD工艺独立地沉积阻挡层，钌层，钨成核层和钨体层。 在一些实例中，在沉积后续层之前，例如在阻挡层和钌层的沉积，钌层和钨成核层或钨成核层和钨体之间，将衬底暴露于浸泡工艺 层。

公开(公告)号：US20080085611A1

公开(公告)日：2008-04-10

申请号：US11869557

申请日：2007-10-09

Applicant: AMIT KHANDELWAL ,  AVGERINOS V. GELATOS ,  CHRISTOPHE MARCADAL ,  MEI CHANG

Inventor： AMIT KHANDELWAL ,  AVGERINOS V. GELATOS ,  CHRISTOPHE MARCADAL ,  MEI CHANG

IPC: H01L21/31

CPC classification number: H01L21/28556 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76862

Abstract: In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层： 将衬底暴露于等离子体工艺。 在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。 在另一示例中，在第二氮化钛层上沉积第三氮化钛层。 随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。 在一个示例中，每个氮化钛层可以具有约的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位， SUP>。

公开(公告)号：US09783889B2

公开(公告)日：2017-10-10

申请号：US13430278

申请日：2012-03-26

Applicant: Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Olkan Cuvalci ,  Kai Wu ,  Michael P. Karazim

Inventor： Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Olkan Cuvalci ,  Kai Wu ,  Michael P. Karazim

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC classification number: C23C16/46 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/52

Abstract: In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.

公开(公告)号：US08920564B2

公开(公告)日：2014-12-30

申请号：US13169373

申请日：2011-06-27

Applicant: Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Amit Khandelwal ,  Benjamin Cheng Wang ,  Avgerinos V. Gelatos ,  Kai Wu ,  Michael P. Karazim ,  Jing Lin ,  Olkan Cuvalci

Inventor： Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Amit Khandelwal ,  Benjamin Cheng Wang ,  Avgerinos V. Gelatos ,  Kai Wu ,  Michael P. Karazim ,  Jing Lin ,  Olkan Cuvalci

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  C23C16/45587 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/52

Abstract: A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Abstract translation: 衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

公开(公告)号：US20130247826A1

公开(公告)日：2013-09-26

申请号：US13430278

申请日：2012-03-26

Applicant: GWO-CHUAN TZU ,  XIAOXIONG YUAN ,  AMIT KHANDELWAL ,  AVGERINOS V. GELATOS ,  OLKAN CUVALCI ,  KAI WU ,  MICHAEL P. KARAZIM

Inventor： GWO-CHUAN TZU ,  XIAOXIONG YUAN ,  AMIT KHANDELWAL ,  AVGERINOS V. GELATOS ,  OLKAN CUVALCI ,  KAI WU ,  MICHAEL P. KARAZIM

IPC: C23C16/46 ,  F24J3/00

CPC classification number: C23C16/46 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/52

Abstract: In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.

Abstract translation: 在一些实施例中，用于可变衬底温度控制的装置可以包括可沿衬底支撑件的中心轴线移动的加热器; 围绕所述加热器设置的密封环，所述密封环被配置为与设置在所述加热器上方的阴影环接合以形成密封; 多个间隔销，其构造成支撑基板并且设置在形成在所述加热器中的多个通孔内，所述多个间隔销可平行于所述中心轴线移动，其中所述多个间隔销控制所述基板和所述基板之间的第一距离 加热器和衬底和阴影环之间的第二距离; 以及弹性元件，其设置在所述密封环下方以将所述密封环朝向所述加热器的后侧表面偏置。

公开(公告)号：US20120003833A1

公开(公告)日：2012-01-05

申请号：US13172339

申请日：2011-06-29

Applicant: AMIT KHANDELWAL ,  KAI WU ,  EMILY RENUART ,  JINQIU CHEN ,  AVGERINOS V. GELATOS

Inventor： AMIT KHANDELWAL ,  KAI WU ,  EMILY RENUART ,  JINQIU CHEN ,  AVGERINOS V. GELATOS

IPC: H01L21/285

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/45525

Abstract: Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas.

Abstract translation: 本文提供了在基片上形成含钨层的方法。 在一些实施例中，在设置在处理室中的衬底上形成含钨层的方法可以包括混合氢气和氢化物以形成第一工艺气体; 将第一工艺气体引入处理室; 将处理室中的衬底暴露于第一工艺气体第一时间段以形成经调理的衬底表面; 随后清洗第一工艺气体的处理室; 将衬底暴露于包含钨前体的第二工艺气体持续第二时间段以在经调理的衬底表面上方形成含钨成核层; 随后清洗第二工艺气体的处理室。

公开(公告)号：US20110244682A1

公开(公告)日：2011-10-06

申请号：US13160378

申请日：2011-06-14

Applicant: AMIT KHANDELWAL ,  Madhu MOORTHY ,  Avgerinos V. GELATOS ,  Kai WU

Inventor： AMIT KHANDELWAL ,  Madhu MOORTHY ,  Avgerinos V. GELATOS ,  Kai WU

IPC: H01L21/285

CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.

Abstract translation: 本发明的实施方案提供了一种沉积含钨材料的方法。 在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层 钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。 在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中 在约50sccm至约500sccm的范围内。

公开(公告)号：US20100167527A1

公开(公告)日：2010-07-01

申请号：US12637864

申请日：2009-12-15

Applicant: Kai Wu ,  Amit Khandelwal ,  Averinos V. Gelatos

Inventor： Kai Wu ,  Amit Khandelwal ,  Averinos V. Gelatos

IPC: H01L21/768 ,  H01L21/3205

CPC classification number: H01L21/76876 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/76861 ,  H01L21/76877

Abstract: A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited.

Abstract translation: 提供了一种控制钨膜的电阻率和形态的方法，包括：在第一沉积阶段，通过（i）引入连续流动的还原气体和脉冲流 将含钨化合物加入到处理室中，以沉积在基材表面上的钨，（ii）使还原气体流动，而不使含钨化合物流入室中以吹扫室，并重复步骤（i）至（ii） ），直到第一膜填充衬底表面中的通孔，增加处理室中的压力，并且在第一沉积阶段之后的第二沉积阶段期间，通过提供还原气体和钨的流动沉积体钨层的第二膜 包含化合物到处理室，直到沉积第二期望厚度。

公开(公告)号：US07732327B2

公开(公告)日：2010-06-08

申请号：US12239046

申请日：2008-09-26

Applicant: Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

Inventor： Sang-Hyeob Lee ,  Avgerinos V. Gelatos ,  Kai Wu ,  Amit Khandelwal ,  Ross Marshall ,  Emily Renuart ,  Wing-Cheong Gilbert Lai ,  Jing Lin

IPC: H01L21/4763

CPC classification number: C23C16/42 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用浸泡方法和气相沉积方法提供具有显着改善的表面均匀性的钨膜，同时提高生产水平的生产量。 在一个实施例中，提供了一种方法，其包括通过将衬底暴露于硅前体的连续流中而在衬底上沉积钨硅化物层，同时将衬底暴露于钨前体的间歇脉冲。 该方法还提供了将硅衬底暴露于硅/钨前体流速比大于1，例如约2，约3或更大的硅和钨前体。 随后，该方法提供在硅化钨层上沉积氮化钨层，在钨氮化物层上沉积钨成核层，并在钨成核层上沉积钨体层。

公开(公告)号：US20090280640A1

公开(公告)日：2009-11-12

申请号：US12426815

申请日：2009-04-20

Applicant: AMIT KHANDELWAL ,  Avgerinos V. Gelatos ,  Christophe Marcadal ,  Mei Chang

Inventor： AMIT KHANDELWAL ,  Avgerinos V. Gelatos ,  Christophe Marcadal ,  Mei Chang

IPC: H01L21/768

CPC classification number: H01L21/28556 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76862

Abstract: In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层： 将衬底暴露于等离子体工艺。 在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。 在另一示例中，在第二氮化钛层上沉积第三氮化钛层。 随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。 在一个示例中，每个氮化钛层可以具有约15埃的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。