公开(公告)号：US20050019993A1

公开(公告)日：2005-01-27

申请号：US10869764

申请日：2004-06-16

Applicant: Deok-Hyung Lee ,  Si-Young Choi ,  Byeong-Chan Lee ,  Yong-Hoon Son ,  In-Soo Jung

Inventor： Deok-Hyung Lee ,  Si-Young Choi ,  Byeong-Chan Lee ,  Yong-Hoon Son ,  In-Soo Jung

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/00 ,  H01L21/44 ,  H01L21/8242

CPC classification number: H01L29/7851 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42384 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of forming a fin field effect transistor on a semiconductor substrate includes forming a vertical fin protruding from the substrate. A buffer oxide liner is formed on a top surface and on sidewalls of the fin. A trench is then formed on the substrate, where at least a portion of the fin protrudes from a bottom surface of the trench. The trench may be formed by forming a dummy gate on at least a portion of the fin, forming an insulation layer on the fin surrounding the dummy gate, and then removing the dummy gate to expose the at least a portion of the fin, such that the trench is surrounded by the insulation layer. The buffer oxide liner is then removed from the protruding portion of the fin, and a gate is formed in the trench on the protruding portion of the fin.

Abstract translation: 在半导体衬底上形成鳍状场效应晶体管的方法包括形成从衬底突出的垂直翅片。 缓冲氧化物衬垫形成在翅片的顶表面和侧壁上。 然后在衬底上形成沟槽，其中鳍的至少一部分从沟槽的底表面突出。 可以通过在鳍片的至少一部分上形成伪栅极来形成沟槽，在围绕虚拟栅极的鳍片上形成绝缘层，然后去除伪栅极以暴露鳍片的至少一部分，使得 沟槽被绝缘层包围。 然后从鳍片的突出部分去除缓冲氧化物衬垫，并且在鳍片的突出部分上的沟槽中形成栅极。

公开(公告)号：US06835996B2

公开(公告)日：2004-12-28

申请号：US10684451

申请日：2003-10-15

Applicant: Chul-Sung Kim ,  Si-Young Choi ,  Jung-Woo Park ,  Jong-Ryol Ryu ,  Byeong-Chan Lee

Inventor： Chul-Sung Kim ,  Si-Young Choi ,  Jung-Woo Park ,  Jong-Ryol Ryu ,  Byeong-Chan Lee

IPC: H01L2900

CPC classification number: H01L21/76224

Abstract: A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.

Abstract translation: 半导体器件中的沟槽隔离及其制造方法包括：在硅衬底中形成具有用于器件隔离的内侧壁的沟槽; 在形成沟槽的内侧壁的硅衬底的表面上形成氧化物层; 向硅衬底提供愈合元件以去除悬挂键; 并用器件隔离层填充沟槽，从而形成沟槽隔离，而不产生悬挂键导致电荷陷阱。

公开(公告)号：US09397219B2

公开(公告)日：2016-07-19

申请号：US14680458

申请日：2015-04-07

Applicant: Seok-hoon Kim ,  Jin-bum Kim ,  Kwan-heum Lee ,  Byeong-chan Lee ,  Cho-eun Lee ,  Su-jin Jung

Inventor： Seok-hoon Kim ,  Jin-bum Kim ,  Kwan-heum Lee ,  Byeong-chan Lee ,  Cho-eun Lee ,  Su-jin Jung

IPC: H01L21/302 ,  H01L21/461 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7856

Abstract: Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in the device, and a method of manufacturing the device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region. The gate structure includes a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer. At least one of the source/drain regions includes a first strain-inducing layer and a second strain-inducing layer. The first strain-inducing layer is disposed between a lateral surface of the channel region and the second strain-inducing layer and contacts at least a portion of the gate dielectric layer.

Abstract translation: 半导体器件包括能够对包括在器件中的晶体管的沟道区域施加应变的应变诱导层以及该器件的制造方法。 半导体器件包括具有沟道区的衬底; 一对源极/漏极区，设置在所述衬底上并且沿着第一方向布置在所述沟道区的两侧; 以及设置在通道区域上的栅极结构。 栅极结构包括沿与第一方向不同的第二方向延伸的栅极电极图案，沟道区域和栅电极图案之间的栅极介电层以及覆盖栅电极图案的各个侧表面的栅极间隔 栅介质层。 源极/漏极区域中的至少一个包括第一应变诱导层和第二应变诱导层。 第一应变诱导层设置在沟道区的侧表面和第二应变诱导层之间，并与栅介质层的至少一部分接触。

公开(公告)号：US09368495B2

公开(公告)日：2016-06-14

申请号：US14576368

申请日：2014-12-19

Applicant: Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L21/00 ,  H01L27/088 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

Abstract translation: 半导体器件分别在衬底上包括衬底，第一有源鳍片和第二有源鳍片，分别在第一有源鳍片和第二有源鳍片上的多个第一外延层，多个第二外延层， 多个第一外延层，将多个第二外延层彼此连接的桥接层以及桥接层上的第三外延层。

公开(公告)号：US20150333061A1

公开(公告)日：2015-11-19

申请号：US14576368

申请日：2014-12-19

Applicant: Seok-Hoon KIM ,  Jin-Bum KIM ,  Kwan-Heum LEE ,  Byeong-Chan LEE ,  Cho-Eun LEE ,  Jin-Hee HAN ,  Bon-Young KOO

Inventor： Seok-Hoon KIM ,  Jin-Bum KIM ,  Kwan-Heum LEE ,  Byeong-Chan LEE ,  Cho-Eun LEE ,  Jin-Hee HAN ,  Bon-Young KOO

IPC: H01L27/088 ,  H01L29/78 ,  H01L27/02

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

Abstract translation: 半导体器件分别在衬底上包括衬底，第一有源鳍片和第二有源鳍片，分别在第一有源鳍片和第二有源鳍片上的多个第一外延层，多个第二外延层， 多个第一外延层，将多个第二外延层彼此连接的桥接层以及桥接层上的第三外延层。

公开(公告)号：US08273620B2

公开(公告)日：2012-09-25

申请号：US12793809

申请日：2010-06-04

Applicant: Jin-bum Kim ,  Young-pil Kim ,  Si-young Choi ,  Byeong-chan Lee ,  Jong-wook Lee

Inventor： Jin-bum Kim ,  Young-pil Kim ,  Si-young Choi ,  Byeong-chan Lee ,  Jong-wook Lee

IPC: H01L21/8234

CPC classification number: H01L21/823418 ,  H01L21/823456 ,  H01L27/105 ,  H01L27/1052

Abstract: Embodiments of the invention provide a semiconductor integrated circuit device and a method for fabricating the device. The semiconductor device includes a semiconductor substrate having a cell region and a peripheral region, a cell active region formed in the cell region, and a peripheral active region formed in the peripheral region, wherein the cell active region and the peripheral active region are defined by isolation regions. The semiconductor device further includes a first gate stack formed on the cell active region, a second gate stack formed on the peripheral active region, a cell epitaxial layer formed on an exposed portion of the cell active region, and a peripheral epitaxial layer formed on an exposed portion of the peripheral active region, wherein the height of the peripheral epitaxial layer is greater than the height of the cell epitaxial layer.

Abstract translation: 本发明的实施例提供一种半导体集成电路器件及其制造方法。 半导体器件包括具有单元区域和周边区域的半导体衬底，形成在单元区域中的单元有源区域和形成在周边区域中的外围有源区域，其中，电池有源区域和外围有源区域由 隔离区。 半导体器件还包括形成在单元有源区上的第一栅极堆叠，形成在外围有源区上的第二栅极堆叠，形成在电池有源区域的暴露部分上的电池外延层和形成在电池有源区上的外围外延层 所述周边有源区的暴露部分，其中所述外围外延层的高度大于所述电池外延层的高度。

公开(公告)号：US20110177671A1

公开(公告)日：2011-07-21

申请号：US12958858

申请日：2010-12-02

Applicant: Sung-Woo HYUN ,  Byeong-Chan LEE ,  Sun-Ghil LEE ,  Yong-Hoon SON

Inventor： Sung-Woo HYUN ,  Byeong-Chan LEE ,  Sun-Ghil LEE ,  Yong-Hoon SON

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L27/1052 ,  H01L27/10876

Abstract: Methods of forming a semiconductor cell array region, a method of forming a semiconductor device including the semiconductor cell array region, and a method of forming a semiconductor module including the semiconductor device are provided, the methods of forming the semiconductor cell array region include preparing a semiconductor plate. A semiconductor layer may be formed over the semiconductor plate. The semiconductor layer may be etched to form semiconductor pillars over the semiconductor plate.

Abstract translation: 提供形成半导体单元阵列区域的方法，形成包括半导体单元阵列区域的半导体器件的方法以及形成包括该半导体器件的半导体模块的方法，形成半导体单元阵列区域的方法包括： 半导体板。 半导体层可以形成在半导体板上。 可以蚀刻半导体层以在半导体板上形成半导体柱。

公开(公告)号：US07816735B2

公开(公告)日：2010-10-19

申请号：US11974293

申请日：2007-10-12

Applicant: Pil-Kyu Kang ,  Yong-Hoon Son ,  Si-Young Choi ,  Jong-Wook Lee ,  Byeong-Chan Lee ,  InSoo Jung

Inventor： Pil-Kyu Kang ,  Yong-Hoon Son ,  Si-Young Choi ,  Jong-Wook Lee ,  Byeong-Chan Lee ,  InSoo Jung

IPC: H01L33/16

CPC classification number: H01L21/823425 ,  H01L21/823475

Abstract: Integrated circuit devices are provided including a first single-crystalline layer and an insulating layer pattern on the first single-crystalline layer. The insulating layer pattern has an opening therein that partially exposes the first single-crystalline layer. A seed layer is in the opening. A second single-crystalline layer is on the insulating layer pattern and the seed layer. The second single-crystalline layer has a crystalline structure substantially the same as that of the seed layer. A transcription-preventing pattern is on the second single-crystalline layer and a third single-crystalline layer on the transcription-preventing pattern and the second single-crystalline layer. The transcription-preventing pattern is configured to limit transcription of defective portions in the second single-crystalline layer into the third single-crystalline layer.

Abstract translation: 在第一单晶层上提供包括第一单晶层和绝缘层图案的集成电路器件。 绝缘层图案在其中具有部分地暴露第一单晶层的开口。 种子层在开口处。 第二单晶层位于绝缘层图案和籽晶层上。 第二单晶层具有与种子层基本相同的晶体结构。 转录阻止图案位于转录阻止图案和第二单晶层上的第二单晶层和第三单晶层上。 转录阻止图案被配置为将第二单晶层中的缺陷部分的转录限制为第三单晶层。

公开(公告)号：US07755133B2

公开(公告)日：2010-07-13

申请号：US11855529

申请日：2007-09-14

Applicant: Jin-bum Kim ,  Young-pil Kim ,  Si-young Choi ,  Byeong-chan Lee ,  Jong-wook Lee

Inventor： Jin-bum Kim ,  Young-pil Kim ,  Si-young Choi ,  Byeong-chan Lee ,  Jong-wook Lee

IPC: H01L29/788

CPC classification number: H01L21/823418 ,  H01L21/823456 ,  H01L27/105 ,  H01L27/1052

Abstract: Embodiments of the invention provide a semiconductor integrated circuit device and a method for fabricating the device. The semiconductor device includes a semiconductor substrate having a cell region and a peripheral region, a cell active region formed in the cell region, and a peripheral active region formed in the peripheral region, wherein the cell active region and the peripheral active region are defined by isolation regions. The semiconductor device further includes a first gate stack formed on the cell active region, a second gate stack formed on the peripheral active region, a cell epitaxial layer formed on an exposed portion of the cell active region, and a peripheral epitaxial layer formed on an exposed portion of the peripheral active region, wherein the height of the peripheral epitaxial layer is greater than the height of the cell epitaxial layer.

Abstract translation: 本发明的实施例提供一种半导体集成电路器件及其制造方法。 半导体器件包括具有单元区域和周边区域的半导体衬底，形成在单元区域中的单元有源区域和形成在周边区域中的外围有源区域，其中，电池有源区域和外围有源区域由 隔离区。 半导体器件还包括形成在单元有源区上的第一栅极堆叠，形成在外围有源区上的第二栅极堆叠，形成在电池有源区域的暴露部分上的电池外延层和形成在电池有源区上的外围外延层 所述周边有源区的暴露部分，其中所述外围外延层的高度大于所述电池外延层的高度。

公开(公告)号：US07683405B2

公开(公告)日：2010-03-23

申请号：US10886167

申请日：2004-07-07

Applicant: Yong-Hoon Son ,  Si-Young Choi ,  Byeong-Chan Lee ,  Deok-Hyung Lee ,  In-Soo Jung

Inventor： Yong-Hoon Son ,  Si-Young Choi ,  Byeong-Chan Lee ,  Deok-Hyung Lee ,  In-Soo Jung

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/6659 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/7833

Abstract: Metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions and methods of fabricating the same are provided. The MOS transistors may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided on bottom surfaces of the recessed regions. High concentration impurity regions are provided in the epitaxial layers. The recessed regions may be formed using a chemical dry etching techniques.

Abstract translation: 提供了具有升高的源极/漏极区域的金属氧化物半导体（MOS）晶体管及其制造方法。 MOS晶体管可以包括形成为跨越衬底的预定区域的栅极图案。 凹陷区域设置在与栅极图案相邻的衬底中。 外凹层设置在凹陷区域的底表面上。 在外延层中设置高浓度杂质区。 凹陷区域可以使用化学干蚀刻技术形成。