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    Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature
    21.
    发明授权
    Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature 失效
    其中具有缓冲层的集成电路器件含有通过在低温下热处理而稳定的金属氧化物

    公开(公告)号：US6144060A

    公开(公告)日：2000-11-07

    申请号：US127353

    申请日：1998-07-31

    申请人： In-seon Park ,  Yeong-kwan Kim ,  Sang-in Lee ,  Byung-hee Kim ,  Sang-min Lee ,  Chang-soo Park

    发明人： In-seon Park ,  Yeong-kwan Kim ,  Sang-in Lee ,  Byung-hee Kim ,  Sang-min Lee ,  Chang-soo Park

    IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/285 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/72

    CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L27/10852 ,  H01L28/55

    摘要： Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.

    摘要翻译： 集成电路器件包括第一电介质层，第一电介质层上的电绝缘层和通过原子层沉积（ALD）形成并通过在小于约600℃的温度下进行热处理而稳定的氧化铝缓冲层， 在第一介电层和电绝缘层之间。 第一电介质层可以包括高电介质材料，例如铁电或顺电材料。 电绝缘层还可以包括选自二氧化硅，硼磷硅酸盐玻璃（BPSG）和磷硅玻璃（PSG）的材料。 为了提供优选的集成电路电容器，可以提供衬底，并且可以在衬底上提供层间电介质层。 这里，还可以在层间介电层和第一介电层之间设置金属层。 金属层可以包括选自Pt，Ru，Ir和Pd的材料。

    Semiconductor device and manufacturing method thereof
    22.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US5869902A

    公开(公告)日：1999-02-09

    申请号：US612792

    申请日：1996-03-11

    申请人： Sang-in Lee ,  Chang-soo Park

    发明人： Sang-in Lee ,  Chang-soo Park

    IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

    摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

    Laser linewidth measuring apparatus utilizing stimulated brillouin scattering
    23.
    发明授权
    Laser linewidth measuring apparatus utilizing stimulated brillouin scattering 失效
    利用受激布里渊散射的激光线宽测量装置

    公开(公告)号：US5764359A

    公开(公告)日：1998-06-09

    申请号：US821830

    申请日：1997-03-21

    申请人： Gap-Youl Lyu ,  Sang-Soo Lee ,  Dong-Ho Lee ,  Chang-Soo Park

    发明人： Gap-Youl Lyu ,  Sang-Soo Lee ,  Dong-Ho Lee ,  Chang-Soo Park

    IPC分类号： G01J9/04 ,  G01J9/00 ,  G02F1/35 ,  H01S3/00 ,  H01S3/10 ,  G01B9/02

    CPC分类号： G01J9/00

    摘要： An apparatus for measuring the linewidth of a laser is disclosed in which the linewidth of a laser is measured in a wide range from a narrow linewidth to a wide linewidth by utilizing frequency-shifted rays based on a stimulated Brillouin scattering within an optical fiber in an easy and efficient manner. The apparatus according to the present invention includes: an optical signal generating and splitting means for generating optical signals under test, and for splitting them into two sets of signals; a frequency shifting means for amplifying the optical frequency of the optical source of the optical signal generating and splitting means, and then, irradiating the amplified signals into an optical fiber so as to shift the frequency based on a stimulated Brillouin phenomenon; a leading means for minimizing a loss of the frequency shifted rays outputted in a direction opposite to that of original laser beams of the frequency shifting means so as to leading them in a certain direction; and a spectrum analyzing means for receiving the original rays from the optical signal generating and splitting means and for receiving the frequency-shifted rays from the leading means so as to stimulate beatings and to analyze the beaten spectra. The apparatus is applied to measuring the linewidth and channel interval of a laser used in wavelength division multiplexing optical communications.

    摘要翻译： 公开了一种用于测量激光器的线宽的装置，其中通过利用基于光纤内的受激布里渊散射的频移射线，在从窄线宽到宽线宽的宽范围内测量激光的线宽。 方便高效的方式。 根据本发明的装置包括：光信号产生和分离装置，用于产生被测光信号，并将它们分成两组信号; 用于放大光信号产生和分离装置的光源的光频率的频移装置，然后将放大的信号照射到光纤中，以便基于受激布里渊现象来移动频率; 用于最小化在与频移装置的原始激光束相反的方向上输出的频移的光线的损失以便沿某一方向引导的引导装置; 以及频谱分析装置，用于从光信号产生和分离装置接收原始光线，并用于接收来自前置装置的频移光线，以便刺激拍打并分析拍频。 该装置用于测量波分复用光通信中使用的激光器的线宽和通道间隔。

    Method for manufacturing a semiconductor device with heat treated diffusion layers
    24.
    发明授权
    Method for manufacturing a semiconductor device with heat treated diffusion layers 失效
    制造具有热处理扩散层的半导体器件的方法

    公开(公告)号：US5502004A

    公开(公告)日：1996-03-26

    申请号：US117580

    申请日：1993-09-07

    申请人： Chang-soo Park

    发明人： Chang-soo Park

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/44

    CPC分类号： H01L21/76864 ,  H01L21/285 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76838 ,  H01L21/76843

    摘要： In a method for forming a metal wiring layer of a semiconductor device an insulating layer is formed on a semiconductor substrate having impurity-doped regions. A contact hole is formed in the insulating layer to expose an impurity-doped semiconductor region. Thereafter, a diffusion barrier layer is formed on the inner surface of the contact holes and on the surface of the semiconductor substrate exposed by the contact holes. The diffusion barrier layer is heat-treated for two minutes to one hour in a vacuum at a temperature of 450.degree. C. to 650.degree. C. Then, a metal wiring layer of a semiconductor device is formed on the diffusion barrier layer.

    摘要翻译： 在形成半导体器件的金属布线层的方法中，在具有杂质掺杂区域的半导体衬底上形成绝缘层。 在绝缘层中形成接触孔以暴露杂质掺杂半导体区域。 此后，在接触孔的内表面和由接触孔露出的半导体衬底的表面上形成扩散阻挡层。 扩散阻挡层在真空中在450℃至650℃的温度下热处理2分钟至1小时。然后，在扩散阻挡层上形成半导体器件的金属布线层。

    Optical modulator
    27.
    发明授权
    Optical modulator 有权
    光调制器

    公开(公告)号：US08492863B2

    公开(公告)日：2013-07-23

    申请号：US12938064

    申请日：2010-11-02

    申请人： Yong-chul Cho ,  Yong-tak Lee ,  Yong-hwa Park ,  Byung-hoon Na ,  Kwang-mo Park ,  Chang-soo Park

    发明人： Yong-chul Cho ,  Yong-tak Lee ,  Yong-hwa Park ,  Byung-hoon Na ,  Kwang-mo Park ,  Chang-soo Park

    IPC分类号： H01L27/14 ,  G02F1/07

    CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02F1/218 ,  G02F2001/0155 ,  G02F2201/307 ,  G02F2203/12

    摘要： Optical modulator having wide bandwidth based on Fabry-Perot resonant reflection is disclosed. The optical modulator includes: a bottom Distributed Bragg Reflector (DBR) layer; a top DBR layer including at least one layer, and a modified layer; and an active layer disposed between bottom and top DBR layers, wherein the at least one layer includes at least one pair of a first refractive index layer having a first refractive index and a second refractive index layer having a second refractive index, the modified layer includes at least one pair of a third refractive index layer having a third refractive index and a fourth refractive index layer having a fourth refractive index, the third and the fourth refractive indexes being different, and at least one of the third and the fourth refractive index layers has a second optical thickness that is not λ/4 or that is not an odd multiple thereof.

    摘要翻译： 公开了基于法布里 - 珀罗共振反射的具有宽带宽的光调制器。 光调制器包括：底部分布布拉格反射器（DBR）层; 包括至少一个层的顶部DBR层和修饰层; 以及设置在底部和顶部DBR层之间的有源层，其中所述至少一层包括至少一对具有第一折射率的第一折射率层和具有第二折射率的第二折射率层，所述改性层包括 至少一对具有第三折射率的第三折射率层和具有第四折射率的第四折射率层，第三和第四折射率不同，并且第三和第四折射率层中的至少一个 具有不是λ/ 4的第二光学厚度或不是其奇数倍。

    OPTICAL IMAGE MODULATOR, OPTICAL APPARATUS INCLUDING THE SAME, AND METHODS OF MANUFACTURING AND OPERATING THE OPTICAL IMAGE MODULATOR
    30.
    发明申请
    OPTICAL IMAGE MODULATOR, OPTICAL APPARATUS INCLUDING THE SAME, AND METHODS OF MANUFACTURING AND OPERATING THE OPTICAL IMAGE MODULATOR 有权
    光学图像调制器，包括其的光学装置，以及制造和操作光学图像调制器的方法

    公开(公告)号：US20100177372A1

    公开(公告)日：2010-07-15

    申请号：US12615381

    申请日：2009-11-10

    申请人： Yong-hwa PARK ,  Jae-hyung JANG ,  Yong-chul CHO ,  Chang-soo PARK ,  Byeong-ha LEE

    发明人： Yong-hwa PARK ,  Jae-hyung JANG ,  Yong-chul CHO ,  Chang-soo PARK ,  Byeong-ha LEE

    IPC分类号： G02F1/03

    CPC分类号： G02B1/10 ,  G02B13/008 ,  G02B26/0816 ,  G02B27/0006

    摘要： Disclosed are an optical image modulator, an optical apparatus including the same, and methods of manufacturing and operating the optical image modulator. The optical image modulator includes a light amount increasing unit increasing the amount of forward light emission of an electric-optical unit. The light amount increasing unit includes a first reflector reflecting light, which travels from the inside of the electric-optical unit toward the optical-electric unit, to the electric-optical unit. The light amount increasing unit may further include a second light reflector reflecting light, which passes through the optical-electric unit without optical-electric conversion, to the optical-electric unit.

    摘要翻译： 公开了一种光学图像调制器，包括该光学器件的光学装置以及制造和操作光学图像调制器的方法。 光学图像调制器包括增加电光单元的正向发光量的光量增加单元。 光量增加单元包括反射从电光单元的内部朝向光电单元行进的光的第一反射器到电光单元。 光量增加单元还可以包括将光通过光电单元而不进行光电转换的反射光的第二光反射器。