公开(公告)号：US20090159871A1

公开(公告)日：2009-06-25

申请号：US11963517

申请日：2007-12-21

Applicant: Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20090159870A1

公开(公告)日：2009-06-25

申请号：US11961478

申请日：2007-12-20

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US20070295951A1

公开(公告)日：2007-12-27

申请号：US11474878

申请日：2006-06-26

Applicant: Jen-Inn Chyi ,  Chia-Ming Lee ,  Jui-Cheng Chang ,  Tsung-Liang Chen ,  Shih-Ling Chen

Inventor： Jen-Inn Chyi ,  Chia-Ming Lee ,  Jui-Cheng Chang ,  Tsung-Liang Chen ,  Shih-Ling Chen

IPC: H01L31/00

CPC classification number: H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L2933/0083

Abstract: A light-emitting diode includes an optical layer formed in an array of substantially equidistant light extracting spots integrated to its multi-layer structure. The array of light extracting spots includes a distribution of juxtaposed hexagon patterns. The layer thickness of the light extracting spots is less than 800 Å, and preferably around 500 Å.

Abstract translation: 发光二极管包括形成为与其多层结构集成的基本上等距的光提取点的阵列的光学层。 光提取点的阵列包括并列六边形图案的分布。 光提取点的层厚小于800，优选为约500。

公开(公告)号：US20070015300A1

公开(公告)日：2007-01-18

申请号：US11181756

申请日：2005-07-15

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/62 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/81192 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12041 ,  H05K1/189 ,  H05K3/328 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/10106 ,  H01L2924/00

Abstract: The present invention discloses a method for fabricating a light-emitting device, wherein a thermosonic bonding process is utilized to join the contacts on a substrate with bond pads on the light-emitting element. Thereby, the deterioration of the substrate can be reduced, and the yield can also be promoted. Further, in the present invention, it is unnecessary to redesign the element specially, and thus, the cost can be lowered.

Abstract translation: 本发明公开了一种用于制造发光器件的方法，其中使用热键合工艺将基片上的触点与发光元件上的接合焊盘接合。 由此，能够降低基板的劣化，能够提高成品率。 此外，在本发明中，不需要特别重新设计元件，因此可以降低成本。

公开(公告)号：US20070012930A1

公开(公告)日：2007-01-18

申请号：US11524869

申请日：2006-09-21

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure

Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接

公开(公告)号：US20060260977A1

公开(公告)日：2006-11-23

申请号：US11160595

申请日：2005-06-30

Applicant: Chia-Ming Lee ,  Chun-Han Liu

Inventor： Chia-Ming Lee ,  Chun-Han Liu

IPC: B65D85/00

CPC classification number: H05K1/0259 ,  G02F1/13452 ,  G02F2202/22 ,  H05K1/0215 ,  H05K3/28 ,  H05K3/361 ,  H05K2201/09781 ,  H05K2201/0989

Abstract: A display module is provided. The display module comprises a display panel, a printed circuit board, and a flexible packaging unit. The display panel has a plurality of first signal pads and at least one first dummy pad. The printed circuit board has a plurality of second signal pads and at least one second dummy pad. In addition, the flexible packaging unit comprises a flexible carrier and a chip, wherein the flexible carrier has a plurality of signal lines and at least one electrostatic discharge protective line. The electrostatic discharge protective line is connected between the first dummy pad and the second dummy pad. Furthermore, the electrostatic discharge protective line has an electricity conducting pad, which is exposed on the surface of the flexible carrier. The chip is disposed on the flexible carrier and connected to the display panel and the printed circuit board through the signal lines.

Abstract translation: 提供了显示模块。 显示模块包括显示面板，印刷电路板和柔性包装单元。 显示面板具有多个第一信号焊盘和至少一个第一虚拟焊盘。 印刷电路板具有多个第二信号焊盘和至少一个第二虚拟焊盘。 此外，柔性包装单元包括柔性载体和芯片，其中柔性载体具有多个信号线和至少一个静电放电保护线。 静电放电保护线连接在第一虚拟焊盘和第二虚拟焊盘之间。 此外，静电放电保护线具有在柔性载体的表面上露出的导电焊盘。 芯片设置在柔性载体上，并通过信号线连接到显示面板和印刷电路板。

公开(公告)号：US20060121642A1

公开(公告)日：2006-06-08

申请号：US11339342

申请日：2006-01-25

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

Abstract translation: 发光器件包括被配置为发射第一光辐射的多层结构，以及覆盖多层结构的表面区域同时留下限定在其上的暴露的电极区域的覆盖层，其中，盖层由材料制成 能够在被第一光辐射刺激时发射至少一个第二光辐射。 覆盖层由包含钝化材料和发光材料化合物的材料混合物制成，涂覆在多层结构上。

公开(公告)号：US20110088255A1

公开(公告)日：2011-04-21

申请号：US12702903

申请日：2010-02-09

Applicant: Chia-Ming Lee ,  Shou-Yuan Yang

Inventor： Chia-Ming Lee ,  Shou-Yuan Yang

IPC: B23P19/00

CPC classification number: B23P19/00 ,  B23P2700/10 ,  H01L21/67092 ,  H01L21/67138 ,  Y10T29/53265 ,  Y10T29/5327 ,  Y10T29/53383 ,  Y10T29/53396

Abstract: A pressing apparatus is adapted for pressing a plurality of heat sinks on a circuit board, and includes a frame body and a plurality of pressing tools. The frame body includes a platform configured for placement of the circuit board thereon, and a mounting frame disposed above and spaced apart from the platform. The pressing tools are disposed at respective positions on the mounting frame. Each of the pressing tools includes an axle component, a universal joint unit disposed at a bottom end of the axle component, and a pressing head connected to the universal joint unit. The axle component extends downwardly between the platform and the mounting frame, and is configured to be resiliently and vertically movable. The pressing head is adapted for contacting one of the heat sinks, and is rotatable about the axle component by virtue of the universal joint unit.

Abstract translation: 一种按压装置适用于在电路板上按压多个散热片，并且包括框体和多个按压工具。 框架主体包括被配置用于将电路板放置在其上的平台和设置在平台上方并与平台间隔开的安装框架。 按压工具设置在安装框架上的相应位置。 每个按压工具包括轴部件，设置在轴部件的底端处的万向接头单元和连接到万向接头单元的按压头。 轴组件在平台和安装框架之间向下延伸，并且构造成可弹性地和垂直地移动。 压头适于接触散热器中的一个，并且可以通过万向节单元绕轴部件旋转。

公开(公告)号：US20110006307A1

公开(公告)日：2011-01-13

申请号：US12828447

申请日：2010-07-01

Applicant: Guan-Ting CHEN ,  Chia-Ming LEE

Inventor： Guan-Ting CHEN ,  Chia-Ming LEE

IPC: H01L29/872 ,  H01L29/205 ,  H01L21/329 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/66212

Abstract: A group III-nitride semiconductor Schottky diode comprises a conducting substrate having a first surface, a stack of multiple layers including a buffer layer and a semiconductor layer sequentially formed on the first surface, wherein the semiconductor layer comprises a group III nitride compound, a first electrode on the semiconductor layer, and a second electrode formed in contact with the first surface at a position adjacent to the stack of multiple layers. In other embodiments, the application also describes a method of fabricating the group III-nitride semiconductor Schottky diode.

Abstract translation: III族氮化物半导体肖特基二极管包括具有第一表面的导电衬底，包括缓冲层的多层叠层和顺序地形成在第一表面上的半导体层，其中半导体层包括III族氮化物化合物，第一 电极，以及在与多层叠层相邻的位置形成为与第一表面接触的第二电极。 在其它实施例中，本申请还描述了制造III族氮化物半导体肖特基二极管的方法。

公开(公告)号：US07645624B2

公开(公告)日：2010-01-12

申请号：US11980472

申请日：2007-10-31

Applicant: Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

Inventor： Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

IPC: H01L21/00 ,  H01L21/76

CPC classification number: H01L33/22 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract translation: 一种用于自粘合外延的方法包括在半导体照明元件的衬底表面上形成钝化层; 蚀刻以形成具有位于其上的钝化层的凹部和突出部分; 开始在凹槽的底表面上形成外延; 用Epi层填充凹槽; 然后覆盖突起部分并开始自身向上附着外延以完成Epi层结构。 这种自粘合外延生长技术可以防止由外延参数误差引起的空腔产生并降低缺陷密度，提高Epi层的质量并提高内部量子效率。