公开(公告)号：US20080042263A1

公开(公告)日：2008-02-21

申请号：US11838804

申请日：2007-08-14

Applicant: Tong-hong Wang ,  Ching-chun Wang

Inventor： Tong-hong Wang ,  Ching-chun Wang

IPC: H01L23/36 ,  H01L23/02

CPC classification number: H01L23/49833 ,  H01L23/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A reinforced semiconductor package (500, 700) with a stiffener (400, 600) is provided. The stiffener is composed of an inner ring (410) disposed on the upper surface (512) of a substrate (510) and surrounding a semiconductor chip (520), and an outer ring (420) also disposed on the upper surface of the substrate but surrounding the inner ring. The inner ring and the outer ring are connected with each other by means of at least one tie bar (430), and cooperatively cover a majority portion of the upper surface of the substrate. Accordingly, the strength and rigidity of the substrate of the present semiconductor package can be reinforced to efficiently prevent warpage thereof.

Abstract translation: 提供了具有加强件（400,600）的增强半导体封装（500,700）。 加强件由设置在基板（510）的上表面（512）上并围绕半导体芯片（520）的内环（410）构成，外环（420）也设置在基板的上表面 但环绕内圈。 内环和外环通过至少一个连接杆（430）彼此连接，并且协同地覆盖基板的上表面的大部分。 因此，可以加强本半导体封装的基板的强度和刚性，以有效地防止其翘曲。

公开(公告)号：US08796805B2

公开(公告)日：2014-08-05

申请号：US13604380

申请日：2012-09-05

Applicant: Shyh-Fann Ting ,  Jiech-Fun Lu ,  Ming-I Wang ,  Yeur-Luen Tu ,  Ching-Chun Wang

Inventor： Shyh-Fann Ting ,  Jiech-Fun Lu ,  Ming-I Wang ,  Yeur-Luen Tu ,  Ching-Chun Wang

IPC: H01L31/00 ,  H01L21/00 ,  H01L27/146 ,  H01L21/768

CPC classification number: H01L27/1464 ,  H01L21/76838 ,  H01L27/14623 ,  H01L27/14687

Abstract: A method includes forming an opening extending from a back surface of a semiconductor substrate to a metal pad on a front side of the semiconductor substrate, and forming a first conductive layer including a first portion overlapping active image sensors in the semiconductor substrate, a second portion overlapping black reference image sensors in the semiconductor substrate, and a third portion in the opening to contact the metal pad. A second conductive layer is formed over and contacting the first conductive layer. A first patterning step is performed to remove the first and the second portions of the second conductive layer, wherein the first conductive layer is used as an etch stop layer. A second patterning step is performed to remove a portion of the first portion of the first conductive layer. The second and the third portions of the first conductive layer remain after the second patterning step.

Abstract translation: 一种方法包括形成从半导体衬底的背表面延伸到半导体衬底的前侧上的金属焊盘的开口，以及在半导体衬底中形成包括与有源图像传感器重叠的第一部分的第一导电层，第二部分 半导体衬底中重叠的黑色参考图像传感器，以及开口中的与金属垫接触的第三部分。 在第一导电层上形成第二导电层并与第一导电层接触。 执行第一图案化步骤以去除第二导电层的第一和第二部分，其中第一导电层用作蚀刻停止层。 执行第二图案化步骤以去除第一导电层的第一部分的一部分。 在第二图案化步骤之后，第一导电层的第二和第三部分保留。

公开(公告)号：US08436443B2

公开(公告)日：2013-05-07

申请号：US12107199

申请日：2008-04-22

Applicant: Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

IPC: H01L27/146 ,  H01L31/09

CPC classification number: H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

Abstract: A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

Abstract translation: 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

公开(公告)号：US08354295B2

公开(公告)日：2013-01-15

申请号：US13275935

申请日：2011-10-18

Applicant: Yuer-Luen Tu ,  Chia-Shiung Tsai ,  Ching-Chun Wang ,  Ren-Jie Lin ,  Shou-Gwo Wuu

Inventor： Yuer-Luen Tu ,  Chia-Shiung Tsai ,  Ching-Chun Wang ,  Ren-Jie Lin ,  Shou-Gwo Wuu

IPC: H01L21/00

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract translation: 本公开提供了用于减少背面照明半导体器件中的暗电流的方法和装置。 在一个实施例中，制造半导体器件的方法包括提供具有前表面和背面的衬底，以及在衬底中形成多个传感器元件，所述多个传感器元件中的每一个被配置为接收朝向背面的光 表面。 该方法还包括在衬底的背面形成电介质层，其中介电层形成为具有压应力以在衬底中引起拉伸应力。 还公开了通过这种方法制造的背面照明半导体器件。

公开(公告)号：US20120280357A1

公开(公告)日：2012-11-08

申请号：US13552734

申请日：2012-07-19

Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu

Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu

IPC: H01L27/06

CPC classification number: H01L23/522 ,  H01L21/6836 ,  H01L21/76256 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

Abstract: Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.

Abstract translation: 提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，在半导体衬底的正面形成第一电路和第二电路，将半导体衬底的正面粘合到 载体衬底，从背面减薄半导体衬底，并且从半导体衬底的背侧到前侧形成沟槽，以将第一电路与第二电路隔离。

公开(公告)号：US08304354B2

公开(公告)日：2012-11-06

申请号：US12765496

申请日：2010-04-22

Applicant: Kai-Chun Hsu ,  Yeur-Luen Tu ,  Chung Chien Wang ,  Tzu-Hsuan Hsu ,  Ching-Chun Wang

Inventor： Kai-Chun Hsu ,  Yeur-Luen Tu ,  Chung Chien Wang ,  Tzu-Hsuan Hsu ,  Ching-Chun Wang

IPC: H01L21/31

CPC classification number: H01L27/14698 ,  H01L21/268 ,  H01L27/1464 ,  H01L27/14643

Abstract: Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image sensor has a sensor array region and a periphery circuit. The methods determines a size of the laser beam from a length of the sensor array region and a length of the periphery circuit so that the laser beam covers an integer number of the sensor array region for at least one alignment of the laser beam on the array of BSI image sensors. The methods further determines a scan pattern so that the boundary of the laser beam does not overlap the sensor array regions during the laser annealing, but only overlaps the periphery circuits.

Abstract translation: 本文公开了用于确定当制造背面照明（BSI）CMOS图像传感器以保持对应于激光扫描边界效应的暗模式条纹图案在图像的传感器阵列区域内发生的激光退火的激光束尺寸和扫描图案的方法 传感器。 每个CMOS图像传感器具有传感器阵列区域和外围电路。 该方法确定来自传感器阵列区域的长度和外围电路的长度的激光束的尺寸，使得激光束覆盖整数个传感器阵列区域，用于激光束在阵列上的至少一个对准 的BSI图像传感器。 该方法进一步确定扫描图案，使得激光束的边界在激光退火期间不与传感器阵列区域重叠，而仅与外围电路重叠。

公开(公告)号：US08247882B2

公开(公告)日：2012-08-21

申请号：US13009354

申请日：2011-01-19

Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu

Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu

IPC: H01L29/00

CPC classification number: H01L23/522 ,  H01L21/6836 ,  H01L21/76256 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

Abstract: Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.

Abstract translation: 提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，在半导体衬底的正面形成第一电路和第二电路，将半导体衬底的正面粘合到 载体衬底，从背面减薄半导体衬底，并且从半导体衬底的背侧到前侧形成沟槽，以将第一电路与第二电路隔离。

公开(公告)号：US08053856B1

公开(公告)日：2011-11-08

申请号：US12830719

申请日：2010-07-06

Applicant: Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Ching-Chun Wang ,  Ren-Jie Lin ,  Shou-Gwo Wuu

Inventor： Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Ching-Chun Wang ,  Ren-Jie Lin ,  Shou-Gwo Wuu

IPC: H01L31/0232

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract translation: 本公开提供了用于减少背面照明半导体器件中的暗电流的方法和装置。 在一个实施例中，制造半导体器件的方法包括提供具有前表面和背面的衬底，以及在衬底中形成多个传感器元件，所述多个传感器元件中的每一个被配置为接收朝向背面的光 表面。 该方法还包括在衬底的背面形成电介质层，其中电介质层具有在衬底中引起拉伸应力的压缩应力。 还公开了通过这种方法制造的背面照明半导体器件。

公开(公告)号：US08030721B2

公开(公告)日：2011-10-04

申请号：US12904903

申请日：2010-10-14

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US07939903B2

公开(公告)日：2011-05-10

申请号：US12651236

申请日：2009-12-31

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/00 ,  H01L31/062

CPC classification number: H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

Abstract: A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.

Abstract translation: 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的金属栅极。