公开(公告)号：US20120299042A1

公开(公告)日：2012-11-29

申请号：US13568553

申请日：2012-08-07

Applicant: Pun Jae Choi ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

Inventor： Pun Jae Choi ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

公开(公告)号：US20120068154A1

公开(公告)日：2012-03-22

申请号：US13234620

申请日：2011-09-16

Applicant: Sung-won HWANG ,  Geun-woo KO ,  Sung-hyun SIM ,  Hun-jae CHUNG ,  Cheol-soo SONE ,  Jin-hyun LEE ,  Byung-hee HONG ,  Su-kang BAE

Inventor： Sung-won HWANG ,  Geun-woo KO ,  Sung-hyun SIM ,  Hun-jae CHUNG ,  Cheol-soo SONE ,  Jin-hyun LEE ,  Byung-hee HONG ,  Su-kang BAE

IPC: H01L51/54 ,  H01L51/56

CPC classification number: H01L51/502 ,  C09K11/65 ,  H01L51/5088 ,  H01L51/5092 ,  H05B33/14

Abstract: A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer.

Abstract translation: 石墨烯量子点发光器件包括：第一石墨烯; 设置在第一石墨烯上并且包括多个石墨烯量子点的石墨烯量子点层; 以及设置在石墨烯量子点层上的第二石墨烯。 石墨烯量子点发光器件的制造方法包括：形成掺杂有第一掺杂剂的第一石墨烯; 在所述第一石墨烯上形成包括多个石墨烯量子点的石墨烯量子点层; 以及在所述石墨烯量子点层上形成掺杂有第二掺杂剂的第二石墨烯。

公开(公告)号：US08063407B2

公开(公告)日：2011-11-22

申请号：US12756824

申请日：2010-04-08

Applicant: Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

Inventor： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC: H01L33/62

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

Abstract: There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

Abstract translation: 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20110228436A1

公开(公告)日：2011-09-22

申请号：US12664501

申请日：2009-09-09

Applicant: Jonathan Lee ,  Jin-Hyun Lee

Inventor： Jonathan Lee ,  Jin-Hyun Lee

IPC: H02H3/08 ,  H01M10/42

CPC classification number: H01M2200/00 ,  H01M2200/103 ,  H01M2200/108

Abstract: An apparatus for protecting a battery pack includes a fuse and a sense resistor, connected on a circuit path along which a charging or discharging current flows, and a fuse control switch for controlling the fuse. Also, the apparatus further includes a Schottky diode having one end connected to the sense resistor and the other end connected to the fuse control switch. Thus, destruction of a sense resistor serving an important role in the battery pack protecting apparatus is detected to melt and cut the fuse, thereby preventing any element from being damaged due to overcurrent and thus improving the safety of a battery pack at a low cost.

Abstract translation: 用于保护电池组的装置包括连接在充电或放电电流流动的电路路径上的保险丝和检测电阻器，以及用于控制保险丝的保险丝控制开关。 此外，该装置还包括肖特基二极管，其一端连接到感测电阻器，另一端连接到保险丝控制开关。 因此，检测在电池组保护装置中起着重要作用的检测电阻器的破坏，以熔化和切断保险丝，从而防止任何元件由于过电流而被损坏，从而以低成本提高电池组的安全性。

公开(公告)号：US20100187548A1

公开(公告)日：2010-07-29

申请号：US12725970

申请日：2010-03-17

Applicant: Grigory ONUSHKIN ,  Jin Hyun LEE ,  Myong Soo CHO ,  Pun Jae CHOI

Inventor： Grigory ONUSHKIN ,  Jin Hyun LEE ,  Myong Soo CHO ,  Pun Jae CHOI

IPC: H01L33/62

CPC classification number: H01L27/156 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.

Abstract translation: 一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

公开(公告)号：US20090159922A1

公开(公告)日：2009-06-25

申请号：US12209644

申请日：2008-09-12

Applicant: Hyun Soo KIM ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

Inventor： Hyun Soo KIM ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L33/641 ,  H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.

Abstract translation: 提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层 根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。 根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。

公开(公告)号：US09166099B2

公开(公告)日：2015-10-20

申请号：US13234739

申请日：2011-09-16

Applicant: Sung-won Hwang ,  Geun-woo Ko ,  Sung-hyun Sim ,  Hun-jae Chung ,  Han-kyu Seong ,  Cheol-soo Sone ,  Jin-hyun Lee ,  Hyung-duk Ko ,  Suk-ho Choi ,  Sung Kim

Inventor： Sung-won Hwang ,  Geun-woo Ko ,  Sung-hyun Sim ,  Hun-jae Chung ,  Han-kyu Seong ,  Cheol-soo Sone ,  Jin-hyun Lee ,  Hyung-duk Ko ,  Suk-ho Choi ,  Sung Kim

IPC: H01L29/06 ,  H01L33/06 ,  H01L29/786 ,  H01L33/34 ,  H01L51/00

CPC classification number: H01L33/06 ,  H01L29/78684 ,  H01L33/34 ,  H01L51/0046

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract translation: 提供石墨烯发光装置及其制造方法。 石墨烯发光器件包括掺杂有p型掺杂剂的p型石墨烯; 掺杂有n型掺杂剂的n型石墨烯; 以及设置在所述类型石墨烯和所述n型石墨烯之间并发光的活性石墨烯，其中所述p型石墨烯，所述n型石墨烯和所述活性石墨烯水平地布置。

公开(公告)号：US08872205B2

公开(公告)日：2014-10-28

申请号：US13179325

申请日：2011-07-08

Applicant: Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。

公开(公告)号：US08372672B2

公开(公告)日：2013-02-12

申请号：US12209644

申请日：2008-09-12

Applicant: Hyun Soo Kim ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

Inventor： Hyun Soo Kim ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

IPC: H01L21/00

CPC classification number: H01L33/641 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.

Abstract translation: 氮化物半导体发光器件包括具有n型和p型氮化物半导体层的发光结构和在它们之间形成的有源层。 N型和p型电极分别电连接到n型和p型氮化物半导体。 在n型氮化物半导体层和n型电极之间形成n型欧姆接触层，并且具有形成在第一层上的第一层材料In和形成在第一层上的第二层和含有W的材料。氮化物 半导体发光器件具有热稳定性和优异的电热特性而不进行热处理。

公开(公告)号：US20120007101A1

公开(公告)日：2012-01-12

申请号：US13179325

申请日：2011-07-08

Applicant: Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

Inventor： Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

IPC: H01L33/36 ,  H01L33/30 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。