Abstract:
Provided herein are compounds, compositions, and methods in the field of medicinal chemistry. The compounds and compositions provided herein relate to spiro-oxindoles which function as antagonists of the interaction between p53 and MDM2, and their use as therapeutics for the treatment of cancer and other diseases.
Abstract:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
Abstract:
Described is an apparatus that comprises: a programmable delay line (PDL) to receive a pulse-width modulation (PWM) signal as input and to generate a first output; a selection unit operable to provide PWM signal or its inverted version as a second output; and a sequential unit coupled to the PDL, the sequential unit to sample the second output with the first output, the sequential unit to generate a pulse-frequency modulation (PFM) output. Described is also a voltage regulator which comprises: mutually coupled on-die inductors for coupling to a load; a bridge, coupled to the mutually coupled on-die inductors, including a low-side switch and a high-side switch; a PWM controller for controlling the low-side and high-side switches during a first load current; and a PFM controller for controlling the low-side and high-side switches during a second load current, the second load current being smaller than the first load current, the PFM controller comprising: a comparator for comparing output voltage of the load with a reference voltage; and a first PDL coupled to the comparator for determining turn-on duration of the high-side switch.
Abstract:
In one embodiment, a test apparatus includes a field programmable gate array (FPGA) including a first transmitter to communicate first signals according to current mode logic (CML) signaling and a first receiver to receive second signals according to the CML signaling, and an interface circuit to couple the FPGA to a device that is to communicate according to voltage mode signaling. The interface circuit may adapt the first signals communicated by the first transmitter according to the CML signaling to voltage mode signaling signals for receipt by the device. Other embodiments are described and claimed.
Abstract:
Embodiments of an apparatus, system and method are described for dynamically time-interleaving supply voltage modulation to shape a power profile. An apparatus may comprise, for example, a power management module to monitor power information received from a plurality of devices and send a power control signal including delay information to each device having power information that exceeds a power threshold, the delay information comprising information for time-interleaving power usage among the devices having power information that exceeds the power threshold. Other embodiments are described and claimed.
Abstract:
Described is a soft-start scheme for a voltage regulator. The apparatus comprises: a first voltage regulator to provide regulated voltage to an output node coupled to a load, the first voltage regulator operable to be in open loop via a bypass unit, the first voltage regulator including a comparator; and a second voltage regulator, coupled to the first voltage regulator, operable to be in closed loop, via the bypass unit, to provide a reference voltage for the comparator of the first voltage regulator.
Abstract:
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
Abstract:
The application provides a method for reducing the loss of electromagnetic radiation caused by passing electromagnetic radiation through material with a rough surface. The method comprises applying a surface layer, such as a liquid or plastic film, to the material. The surface layer masks or decreases the surface irregularities or effects therefrom resulting in decreased loss of electromagnetic energy.
Abstract:
Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.
Abstract:
According to some embodiments, a continuous time linear equalization circuit includes an input of a first stage to receive a differential input signal, and an output of the first stage to output a differential output signal. A transfer function between the input and the output exhibits two zeros and three poles in frequency domain, and the differential output signal is not fed back to the first stage.