SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240412986A1

    公开(公告)日:2024-12-12

    申请号:US18594391

    申请日:2024-03-04

    Abstract: Provided are a substrate processing apparatus and a substrate processing method that are capable of maintaining an etch rate of a substrate within a predetermined range by preventing the amount of dissolved oxygen from being concentrated in a specific region of the substrate when a chemical is supplied to a center of the substrate. The apparatus for processing a substrate includes: a chamber having a processing space; a support unit for supporting and rotating a substrate in the processing space; a liquid discharge unit including a nozzle for discharging a treatment liquid onto a substrate supported by the support unit in a liquid phase; and a liquid supply unit for supplying the treatment liquid to the liquid discharge unit, in which, when viewed from above, the nozzle is spaced apart from a center of the substrate such that when the treatment liquid is supplied to the substrate rotated by the support unit, the treatment liquid is not sprayed by the nozzle at a position overlapping the center of the substrate.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240399429A1

    公开(公告)日:2024-12-05

    申请号:US18442486

    申请日:2024-02-15

    Abstract: Provided is a substrate processing apparatus and a substrate processing method that are capable of increasing exhaust volume without increasing exhaust facilities. An apparatus for processing a substrate includes: a processing chamber having a processing space for processing a substrate; a support unit for supporting the substrate in the processing space; a liquid supply unit for supplying a liquid to a substrate supported by the support unit; and an exhaust unit for exhausting the processing space, in which the exhaust unit includes: an exhaust pipe connected to the processing space; and an exhaust amplifier installed in the exhaust pipe and for supplying acceleration gas to a passage of the exhaust pipe to amplify an exhaust flow rate of exhaust gas flowing in the exhaust pipe.

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20240385524A1

    公开(公告)日:2024-11-21

    申请号:US18664981

    申请日:2024-05-15

    Abstract: Disclosed are an apparatus and a method for treating a substrate, and more particularly, an apparatus and a method for heat treating a substrate. The apparatus includes: a heating unit provided in the inner space, and providing a treatment space in which a heating process of the substrate is performed; a transfer plate positioned within the inner space, and movable between an inner position for loading the substrate into the treatment space or for unloading the substrate from the treatment space and an outer position provided outside the heating unit; and a gas injection unit positioned within the inner space, and for injecting atmosphere gas toward the substrate at the outer position.

    Substrate processing control using a measured size distribution of by-product particles

    公开(公告)号:US12148674B2

    公开(公告)日:2024-11-19

    申请号:US17224658

    申请日:2021-04-07

    Abstract: A substrate processing method and a substrate processing apparatus for removing material on a substrate are disclosed. In order to remove the material, a processing liquid including a chemical liquid and water is supplied on the substrate so that a liquid layer maintained by surface tension is formed. The material is removed from the substrate by a reaction between the material and the processing liquid. A size distribution of by-product particles formed by the reaction between the material and the processing liquid is measured by a dynamic light scattering method. A supply of the processing liquid is controlled based on the size distribution of the by-product particles.

    Control unit and substrate treating apparatus including the same

    公开(公告)号:US12138913B2

    公开(公告)日:2024-11-12

    申请号:US17876545

    申请日:2022-07-29

    Abstract: Provided are a control unit that predicts the life of an inkjet head unit and maximizes its life to be used, and a substrate treating apparatus including the same. The control unit performs maintenance of an inkjet head unit for discharging a substrate treatment liquid onto a substrate and comprises a count module for counting the number of discharges for each nozzle of the inkjet head unit, a comparison module for comparing the number of discharges with a reference value to determine whether the number of discharges is equal to or greater than the reference value, and an evaluation module for evaluating whether a life of the inkjet head unit has reached a usable life based on whether the number of discharges of each nozzle is equal to or greater than the reference value.

    Substrate treating apparatus and substrate treating method

    公开(公告)号:US12138670B2

    公开(公告)日:2024-11-12

    申请号:US17369892

    申请日:2021-07-07

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber that provides a treatment space, in which a substrate is treated, in an interior thereof, a fluid supply unit that supplies a fluid into the process chamber, and an exhaust units including an exhaust line, through which the fluid in the process chamber is exhausted, the fluid supply unit includes a supply tank, in which the fluid is stored, a supply line connecting the supply tank and the process chamber, a branch line branched from the supply line at a first point of the supply line, and a controller that controls the fluid supply unit, and the controller controls the fluid supply unit such that the fluid is drained from the supply line through the branch line shortly before the fluid is supplied into the process chamber.

    Substrate processing apparatus including nozzle unit and substrate processing method

    公开(公告)号:US12134113B2

    公开(公告)日:2024-11-05

    申请号:US18117592

    申请日:2023-03-06

    Abstract: A substrate processing method for processing a substrate, the substrate processing method comprising: a first nozzle moving step of moving a first nozzle to a process position and a standby position in a swing motion manner; a cleaning liquid supplying step of supplying, by the first nozzle, a cleaning liquid onto a rotating substrate at the process position of the first nozzle; a second nozzle moving step of moving a second nozzle to a process position and a standby position in a swing motion manner; a drying gas supplying step of supplying, by the second nozzle, a drying gas onto the rotating substrate at the process position of the second nozzle; and a nozzle distance controlling step of controlling a distance between the first nozzle and the second nozzle on the basis of a horizontal position of at least one of the first nozzle and the second nozzle.

    Nozzle standby port, apparatus for treating substrate including the same and method for cleaning nozzle using the same

    公开(公告)号:US12124169B2

    公开(公告)日:2024-10-22

    申请号:US17566395

    申请日:2021-12-30

    CPC classification number: G03F7/16 B05C5/02

    Abstract: Provided is an apparatus for treating a substrate. In the exemplary embodiment, the apparatus for treating the substrate includes a cup configured to have a treating space with an opened upper portion; a support unit configured to support the substrate in the treating space; a liquid supply unit configured to have a treating liquid supply nozzle for supplying a treating liquid to the substrate supported by the support unit; and a nozzle standby port which is positioned outside treating space, provides a standby space in which the nozzle stands by before and after treating the substrate in the treating space, and has a cleaning member for cleaning the nozzle positioned in the standby space, wherein the nozzle standby port includes an insertion hole provided so that a nozzle tip of the treating liquid supply nozzle is insertable; and a spray member configured to spray a cleaning liquid to the nozzle tip inserted into the insertion hole, wherein an impact point of the cleaning liquid may be spaced apart from the center of the nozzle tip at a predetermined distance.

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