公开(公告)号：US20080239462A1

公开(公告)日：2008-10-02

申请号：US12156876

申请日：2008-06-04

Applicant: Philip J. Kuekes ,  Shih-Yuan Wang ,  Raymond G. Beausoleil ,  Alexandre M. Bratkovski ,  Wei Wu ,  M. Saif Islam

Inventor： Philip J. Kuekes ,  Shih-Yuan Wang ,  Raymond G. Beausoleil ,  Alexandre M. Bratkovski ,  Wei Wu ,  M. Saif Islam

IPC: G02F1/29

CPC classification number: H01Q15/0086 ,  G02F1/0126 ,  G02F1/29 ,  H01Q3/44 ,  Y10T29/4902 ,  Y10T29/49798

Abstract: An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to a wavelength of the incident electromagnetic radiation. At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells is temporally controllable to allow temporal control of an associated effective refractive index encountered by the incident electromagnetic radiation while propagating through the composite material.

公开(公告)号：US07368395B2

公开(公告)日：2008-05-06

申请号：US11601084

申请日：2006-11-16

Applicant: M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

Inventor： M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

IPC: H01L21/461

CPC classification number: H01L21/76838 ,  H01L21/0337

Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

Abstract translation: 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。 该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。 使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。

公开(公告)号：US07329115B2

公开(公告)日：2008-02-12

申请号：US11061226

申请日：2005-02-18

Applicant: Shih-Yuan Wang ,  M. Saif Islam

Inventor： Shih-Yuan Wang ,  M. Saif Islam

IPC: B29C59/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: A nanoimprint mold is described, comprising a plurality of alternating layers of distinct materials differentially etched along an edge thereof, said layers having spatially varying thicknesses along said edge such that nanolines patterned with said nanoimprint mold have corresponding spatially varying pitches.

Abstract translation: 描述了纳米压印模具，其包括沿其边缘差异蚀刻的多个不同材料的交替层，所述层沿着所述边缘具有空间变化的厚度，使得用所述纳米压印模具图案化的纳米线具有相应的空间变化的间距。

公开(公告)号：US07289690B2

公开(公告)日：2007-10-30

申请号：US11107098

申请日：2005-04-15

Applicant: Zhiyong Li ,  Raymond G. Beausoleil ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  M. Saif Islam

Inventor： Zhiyong Li ,  Raymond G. Beausoleil ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  M. Saif Islam

IPC: G02B6/00

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02B2006/1215

Abstract: An apparatus for sensing at least one property of a fluid is described. A first photonic crystal structure and a second photonic crystal structure are defined in a dielectric slab. The first and second photonic crystal structures comprise differently patterned arrays of channels extending through the dielectric slab. The apparatus further comprises a fluid introduction device configured to introduce a common volume of the fluid into the channels of the first and second photonic crystal structures. The at least one property of the fluid can be sensed by measuring the propagation of radiation through the first and second photonic crystal structures.

Abstract translation: 描述了用于感测流体的至少一个性质的装置。 在介质板中限定第一光子晶体结构和第二光子晶体结构。 第一和第二光子晶体结构包括延伸穿过电介质板的不同图案的通道阵列。 该装置还包括流体引入装置，其构造成将共同体积的流体引入第一和第二光子晶体结构的通道中。 可以通过测量通过第一和第二光子晶体结构的辐射的传播来感测流体的至少一个性质。

公开(公告)号：US07151599B2

公开(公告)日：2006-12-19

申请号：US11044421

申请日：2005-01-27

Applicant: M. Saif Islam ,  Shih-Yuan Wang ,  Wei Wu ,  Zhiyong Li ,  R. Stanley Williams

Inventor： M. Saif Islam ,  Shih-Yuan Wang ,  Wei Wu ,  Zhiyong Li ,  R. Stanley Williams

IPC: G01J3/44 ,  G01N21/65

CPC classification number: G01N21/658 ,  G01N2201/0873

Abstract: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.

Abstract translation: 公开了用于增强拉曼光谱和超拉曼的装置，系统和方法。 用于执行拉曼光谱的分子分析装置包括设置在基板上的基板和激光源。 激光源可以被配置为发射激光辐射，其可照射设置在拉曼增强结构上的分析物。 拉曼增强结构可以设置在波导中。 该分子分析装置还包括布置在基板上的波长解复用器和辐射传感器，并且被配置为用于接收可以通过分析物的照射和拉曼增强结构产生的拉曼散射辐射。

公开(公告)号：US08357926B2

公开(公告)日：2013-01-22

申请号：US13486291

申请日：2012-06-01

Applicant: Shih-Yuan Wang ,  M. Saif Islam ,  Philip J. Kuekes ,  Nobuhiko Kobayashi

Inventor： Shih-Yuan Wang ,  M. Saif Islam ,  Philip J. Kuekes ,  Nobuhiko Kobayashi

IPC: H01L29/06 ,  H01S5/20

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/1025 ,  H01S5/021 ,  H01S5/125 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/5018 ,  H01S5/5072 ,  H01S2301/14 ,  Y02E10/50 ,  Y10S977/762

Abstract: A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

Abstract translation: 增益钳位半导体光放大器包括：至少一个第一表面; 至少一个第二表面，每个第二表面面对并与相应的第一表面电隔离; 多个纳米线以桥接形式连接每个相对的第一和第二表面对; 以及与纳米线重叠的信号波导，使得沿着信号波导传播的光信号通过由纳米线的电激励提供的能量被放大。

公开(公告)号：US20110036395A1

公开(公告)日：2011-02-17

申请号：US12911657

申请日：2010-10-25

Applicant: Brian Argo ,  Ruxandra Vidu ,  Pieter Stroeve ,  John Argo ,  Saif Islam ,  Jie-Ren Ku ,  Michael Chen

Inventor： Brian Argo ,  Ruxandra Vidu ,  Pieter Stroeve ,  John Argo ,  Saif Islam ,  Jie-Ren Ku ,  Michael Chen

IPC: H01L31/0236 ,  C23C28/00 ,  C23C14/34 ,  B32B3/00 ,  H01L31/04 ,  C30B25/00 ,  C30B11/00 ,  C25F3/00 ,  C23F1/00

CPC classification number: H01L31/035227 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0352 ,  H01L31/035272 ,  H01L31/043 ,  H01L31/052 ,  H01L31/0525 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/948 ,  Y10T428/12993 ,  Y10T428/2978

Abstract: A method for creating a nanostructure according to one embodiment includes depositing material in a template for forming an array of nanocables; removing only a portion of the template such that the template forms an insulating layer between the nanocables; and forming at least one layer over the nanocables. A nanostructure according to one embodiment includes a nanocable having a roughened outer surface and a solid core. A nanostructure according to one embodiment includes an array of nanocables each having a roughened outer surface and a solid core, the roughened outer surface including reflective cavities; and at least one layer formed over the roughened outer surfaces of the nanocables, the at least one layer creating a photovoltaically active p-n junction. Additional systems and methods are also presented.

Abstract translation: 根据一个实施方案的用于形成纳米结构的方法包括在用于形成纳米线阵列的模板中沉积材料; 仅去除模板的一部分，使得模板在纳米覆盖物之间形成绝缘层; 以及在所述纳米覆盖物上形成至少一个层。 根据一个实施方案的纳米结构包括具有粗糙化的外表面和固体核的纳米结构。 根据一个实施例的纳米结构包括每个具有粗糙化的外表面和实心芯的纳米线阵列，粗糙化的外表面包括反射腔; 以及至少一个层，形成在所述纳米覆盖物的粗糙化的外表面上，所述至少一个层产生光伏活性p-n结。 还介绍了其他系统和方法。

公开(公告)号：US07692179B2

公开(公告)日：2010-04-06

申请号：US10888628

申请日：2004-07-09

Applicant: M. Saif Islam ,  Yong Chen ,  Shih-Yuan Wang ,  R. Stanley Williams

Inventor： M. Saif Islam ,  Yong Chen ,  Shih-Yuan Wang ,  R. Stanley Williams

IPC: H01L29/06

CPC classification number: H01L27/1203 ,  B82Y10/00 ,  G11C2213/81 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/861

Abstract: A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.

Abstract translation: 纳米级器件和制造方法提供具有（111）垂直侧壁的纳米线。 纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底，纳米线和在纳米线的相对端的电接触。 该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层，以形成在半导体层中的一对岛之间延伸的纳米线。 该方法还包括在一对岛上沉积导电材料以形成电触头。 纳米pn二极管包括纳米线作为第一纳米电极，垂直堆叠在纳米线上的pn结，以及在pn结的（110）水平平面端上的第二纳米电极。 可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。

公开(公告)号：US20090294755A1

公开(公告)日：2009-12-03

申请号：US12509689

申请日：2009-07-27

Applicant: Philip J. Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovaski

Inventor： Philip J. Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovaski

IPC: H01L29/15 ,  B05C11/00

CPC classification number: G02B6/107 ,  B82Y30/00 ,  Y10S977/712 ,  Y10S977/762 ,  Y10T29/41

Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.

Abstract translation: 描述了金属纳米结构的图案阵列及其制造。 一种器件包括从衬底垂直延伸的金属柱的图案化阵列。 根据纳米压印方法，通过在其上放置的种子点的预定横向图案上，从衬底催化生长的非金属纳米线阵列之一金属地涂覆每个金属柱。 还描述了用于制造金属纳米结构的图案化阵列的装置。

公开(公告)号：US07342656B2

公开(公告)日：2008-03-11

申请号：US11252134

申请日：2005-10-17

Applicant: M. Saif Islam ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Philip J. Kuekes ,  Wei Wu ,  Zhiyong Li

Inventor： M. Saif Islam ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Philip J. Kuekes ,  Wei Wu ,  Zhiyong Li

IPC: G01J3/44 ,  G01N21/65

CPC classification number: G01N21/658

Abstract: A NERS-active structure includes a deformable, active nanoparticle support structure for supporting a first nanoparticle and a second nanoparticle that is disposed proximate the first nanoparticle. The nanoparticles each comprise a NERS-active material. The deformable, active nanoparticle support structure is configured to vary the distance between the first nanoparticle and the second nanoparticle while performing NERS. Various active nanoparticle support structures are disclosed. A NERS system includes such a NERS-active structure, a radiation source for generating radiation scatterable by an analyte located proximate the NERS-active structure, and a radiation detector for detecting Raman scattered radiation scattered by the analyte. A method for performing NERS includes providing such a NERS-active structure, providing an analyte at a location proximate the NERS-active structure, irradiating the NERS-active structure and the analyte with radiation, varying the distance between the nanoparticles, and detecting Raman scattered radiation scattered by the analyte.

Abstract translation: NERS活性结构包括用于支撑第一纳米颗粒的可变形的活性纳米颗粒支撑结构和邻近第一纳米颗粒设置的第二纳米颗粒。 纳米颗粒各自包含NERS-活性材料。 可变形的活性纳米颗粒支撑结构被配置为在执行NERS的同时改变第一纳米颗粒和第二纳米颗粒之间的距离。 公开了各种活性纳米颗粒载体结构。 NERS系统包括这样的NERS-活性结构，用于产生由位于NERS-活性结构附近的分析物可散射的辐射的辐射源，以及用于检测被分析物散射的拉曼散射辐射的辐射检测器。 执行NERS的方法包括提供这样的NERS活性结构，在靠近NERS-活性结构的位置提供分析物，用辐射照射NERS-活性结构和分析物，改变纳米颗粒之间的距离并检测拉曼散射 被分析物散射的辐射。