Abstract:
An arrangement for achieving and maintaining high efficiency coupling of light between a multi-wavelength optical signal and a relatively thin (e.g., sub-micron) silicon optical waveguide uses a prism coupler in association with an evanescent coupling layer. A grating structure having a period less than the wavelengths of transmission is formed in the coupling region (either formed in the silicon waveguide, evanescent coupling layer, prism coupler, or any combination thereof) so as to increase the effective refractive index “seen” by the multi-wavelength optical signal in the area where the beam exiting/entering the prism coupler intercepts the waveguide surface (referred to as the “prism coupling surface”). The period and/or duty cycle of the grating can be controlled to modify the effective refractive index profile in the direction away from the coupling region so as to reduce the effective refractive index from the relatively high value useful in multi-wavelength coupling to the lower value associated with maintaining confinement of the optical signals within the surface waveguide structure, thus reducing reflections along the transition region.
Abstract:
A coupling arrangement for allowing multiple wavelengths to be coupled into and out of a relatively thin silicon optical waveguide layer utilizes a diffractive optical element, in the form of a volume phase grating, in combination with a prism coupling structure. The diffractive optical element is formed to comprise a predetermined modulation index sufficient to diffract the various wavelengths through angles associated with improving the coupling efficiency of each wavelength into the silicon waveguide. The diffractive optical element may be formed as a separate element, or formed as an integral part of the coupling facet of the prism coupler.
Abstract:
A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.
Abstract:
An apparatus for providing self-aligned optical coupling between an opto-electronic substrate and a fiber array, where the substrate is enclosed by a transparent lid such that the associated optical signals enter and exit the arrangement through the transparent lid. The apparatus takes the form of a two-part connectorized fiber array assembly where the two pieces uniquely mate to form a self-aligned configuration. A first part, in the form of a plate, is attached to the transparent lid in the area where the optical signals pass through. The first plate includes a central opening with inwardly-tapering sidewalls surrounding its periphery. A second plate is also formed to include a central opening and has a lower protrusion with inwardly-tapering sidewalls that mate with the inwardly-tapering sidewalls of the first plate to form the self-aligned connectorized fiber array assembly. The fiber array is then attached to the second plate in a self-aligned fashion.
Abstract:
An opto-electronic assembly is provided comprising a substrate (generally of silicon or glass) for supporting a plurality of interconnected optical and electrical components. A layer of sealing material is disposed to outline a defined peripheral area of the substrate. A molded glass lid is disposed over and bonded to the substrate, where the molded glass lid is configured to create a footprint that matches the defined peripheral area of the substrate. The bottom surface of the molded glass lid includes a layer of bonding material that contacts the substrate's layer of sealing material upon contact, creating a bonded assembly. In one form, a wafer level assembly process is proposed where multiple opto-electronic assemblies are disposed on a silicon wafer and multiple glass lids are molded in a single sheet of glass that is thereafter bonded to the silicon wafer.
Abstract:
An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
Abstract:
An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
Abstract:
An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.
Abstract:
Computer-aided design (CAD) tools are used to perform the integrated design, verification and layout of electrical and optical components in a monolithic, silicon-based electro-optic chip. Separate top-level behavioral logic designs are prepared for the three different types of elements included within the final, silicon-based monolithic structure: (1) digital electronic integrated circuit elements; (2) analog/mixed signal electronic integrated circuit elements; and (3) opto-electronic elements (including passive and active optical elements). Once the behavioral logic design is completed, the results are combined and co-simulated. A physical layout design is developed and verified for each different type of element in the circuit. The separate physical layouts are then co-verified, to assess the properties of the overall physical design. The results of the co-simulation are compared to the results of the co-verification, with alterations made in the logic design and/or the physical layout until the desired operating parameters are obtained. Once the desired results are generated, conventional wafer-level fabrication operations are then considered to provide a final product (“tape out”).
Abstract:
An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.