公开(公告)号：US06589890B2

公开(公告)日：2003-07-08

申请号：US10075510

申请日：2002-02-12

申请人： Barney M. Cohen ,  Suraj Rengarajan ,  Kenny King-Tai Ngan

发明人： Barney M. Cohen ,  Suraj Rengarajan ,  Kenny King-Tai Ngan

IPC分类号： H01L21597

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814

摘要： The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.

公开(公告)号：US20080014732A1

公开(公告)日：2008-01-17

申请号：US11482522

申请日：2006-07-07

申请人： Yanping Li ,  Lisa Yang ,  Suraj Rengarajan

发明人： Yanping Li ,  Lisa Yang ,  Suraj Rengarajan

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953

摘要： An aluminum bondpad and method for making the aluminum bondpad is disclosed. In forming aluminum bondpads, a barrier layer is necessary between a copper interconnect layer and the aluminum bondpad layer. Additionally, a gold wiring layer is deposited on the aluminum bondpad layer and annealed at a high temperature to form an aluminum-gold intermetallic compound. Aluminum reacts with tungsten at high temperatures. Therefore, during the annealing, the aluminum will react with the tungsten. By providing a tungsten nitride barrier layer on a tungsten barrier layer, no aluminum-tungsten intermetallic compound will form, even at the high annealing temperatures required to form the aluminum bondpad.

摘要翻译： 公开了一种铝接合垫及其制造方法。 在形成铝键合层时，在铜互连层和铝接合层之间需要阻挡层。 另外，金结合层沉积在铝接合层上，并在高温下退火以形成铝 - 金金属间化合物。 铝在高温下与钨反应。 因此，在退火期间，铝将与钨反应。 通过在钨阻挡层上提供氮化钨阻挡层，即使在形成铝键合板所需的高退火温度下也不会形成铝 - 钨金属间化合物。

公开(公告)号：US20050133361A1

公开(公告)日：2005-06-23

申请号：US10942358

申请日：2004-09-16

申请人： Peijun Ding ,  Daniel Lubben ,  Ilyoung Hong ,  Michael Miller ,  Hsien-Lung Yang ,  Suraj Rengarajan ,  Arvind Sundarrajan ,  Goichi Yoshidome

发明人： Peijun Ding ,  Daniel Lubben ,  Ilyoung Hong ,  Michael Miller ,  Hsien-Lung Yang ,  Suraj Rengarajan ,  Arvind Sundarrajan ,  Goichi Yoshidome

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3455

摘要： A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

摘要翻译： 用于等离子体溅射反应器中的磁控管的升降机构和相应的使用。 围绕目标轴旋转的磁控管被可控地从目标的背面提升，以补偿溅射侵蚀，从而在溅射表面保持恒定的磁场和合成的等离子体密度，这对于使用小的磁控管的稳定操作特别重要， 例如，一个执行关于目标轴的圆形或行星运动。 升降机构可以包括轴向固定到磁控管支撑轴的导螺杆和与其接合的导螺母，以在导螺母转动时升高磁控管。 或者，支撑轴轴向固定到垂直移动的滑块。 可以根据基于施加到目标的累积功率的配方或通过监视目标的电气特性来控制升力量。

公开(公告)号：US06908865B2

公开(公告)日：2005-06-21

申请号：US10015433

申请日：2001-12-12

申请人： Martin Kranz ,  Srinivas Guggilla ,  Suraj Rengarajan ,  Mei Chang ,  Gongda Yao ,  Nitin Khurana ,  Gilbert Hausmann

发明人： Martin Kranz ,  Srinivas Guggilla ,  Suraj Rengarajan ,  Mei Chang ,  Gongda Yao ,  Nitin Khurana ,  Gilbert Hausmann

IPC分类号： C23G5/00 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/67167 ,  C23G5/00 ,  H01J2237/3355 ,  H01L21/31116 ,  H01L21/67109 ,  H01L21/67184 ,  H01L21/6831 ,  H01L21/76814 ,  H01L21/76871

摘要： Generally, a method for pre-cleaning native oxides and other contaminants from apertures on a substrate is provided. In one embodiment, a method for pre-cleaning apertures on a substrate includes disposing the substrate on a support member in a process chamber, cooling the substrate at least to a temperature of 100 degrees Celsius, and exposing the substrate to a pre-clean process. In another embodiment, a method for pre-cleaning apertures on a substrate includes cooling the substrate at least to a temperature of 100 degrees Celsius in a first chamber, transferring the substrate to a second chamber and pre-cleaning the substrate in the second chamber while maintaining a substrate temperature of 100 degrees Celsius.

摘要翻译： 通常，提供了一种用于从衬底上的孔预先清洁天然氧化物和其它污染物的方法。 在一个实施例中，用于预清洁衬底上的孔的方法包括将衬底设置在处理室中的支撑构件上，将衬底冷却至少至100摄氏度的温度，并将衬底暴露于预清洁过程 。 在另一个实施例中，用于预清洁衬底上的孔的方法包括在第一室中至少将摄氏100度的温度冷却至衬底，将衬底转移到第二腔室并在第二腔室中预先清洁衬底，同时 保持基板温度为100摄氏度。

公开(公告)号：US20050006222A1

公开(公告)日：2005-01-13

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  C23C14/00 ,  C23C14/32 ,  C25B9/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US06579730B2

公开(公告)日：2003-06-17

申请号：US09908829

申请日：2001-07-18

申请人： Haojiang Li ,  Peijun Ding ,  Suraj Rengarajan

发明人： Haojiang Li ,  Peijun Ding ,  Suraj Rengarajan

IPC分类号： H01L3126

CPC分类号： H01L21/67253 ,  G01N27/041 ,  H01L22/20 ,  Y10S438/934

摘要： Generally, a method for monitoring a process of removing native oxides from an at least partially exposed layer disposed on a substrate is provided. In one embodiment, a method for monitoring includes disposing the substrate in a process chamber, exposing the at least partially exposed layer to a reactive pre-clean process, removing the substrate from the process chamber and measuring a sheet resistance of the exposed layer. In another embodiment, a method includes disposing the substrate in a process chamber, exposing the at least partially exposed conductive layer to a reactive pre-clean process that comprises an oxide reduction step, removing the substrate from the process chamber, contacting the conductive layer with one or more contact members, measuring a sheet resistance of the exposed conductive layer between the contact members, and comparing the measured resistance to a known value.

摘要翻译： 通常，提供了一种用于监测从设置在基底上的至少部分暴露的层去除天然氧化物的方法的方法。 在一个实施例中，一种用于监测的方法包括将衬底设置在处理室中，将至少部分暴露的层暴露于反应性预清洁工艺，从处理室移除衬底并测量暴露层的薄层电阻。 在另一个实施例中，一种方法包括将衬底设置在处理室中，将至少部分暴露的导电层暴露于反应性预清洁工艺，其包括氧化物还原步骤，从处理室移除衬底，使导电层与 一个或多个接触构件，测量接触构件之间的暴露的导电层的薄层电阻，并将测量的电阻与已知值进行比较。