公开(公告)号：US6057081A

公开(公告)日：2000-05-02

申请号：US935033

申请日：1997-09-22

申请人： Takashi Yunogami ,  Shunji Sasabe ,  Kazuyuki Suko ,  Jun Abe ,  Takao Kumihashi ,  Fumio Murai

发明人： Takashi Yunogami ,  Shunji Sasabe ,  Kazuyuki Suko ,  Jun Abe ,  Takao Kumihashi ,  Fumio Murai

IPC分类号： G03F7/26 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L21/02071 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32139 ,  G03F7/40 ,  H01L21/0274

摘要： In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

公开(公告)号：US07737023B2

公开(公告)日：2010-06-15

申请号：US12194044

申请日：2008-08-19

申请人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

发明人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

IPC分类号： H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835

摘要： In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

摘要翻译： 在制造具有嵌入式互连结构的半导体集成电路器件的方法中，通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽（例如沟槽或孔）中，并且包括有机硅氧烷作为 通过在CF基气体/ N 2 / Ar气体中对有机绝缘膜进行等离子体干蚀刻来形成主要部件，凹槽，例如沟槽或孔，以抑制底部形成异常形状 在有机绝缘膜上形成光致抗蚀剂膜之后，随后用光致抗蚀剂膜作为蚀刻掩模形成凹部。

公开(公告)号：US07419902B2

公开(公告)日：2008-09-02

申请号：US11104441

申请日：2005-04-13

申请人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

发明人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

IPC分类号： H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835

摘要： In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

摘要翻译： 在制造具有嵌入式互连结构的半导体集成电路器件的方法中，通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽（例如沟槽或孔）中，并且包括有机硅氧烷作为 通过使有机绝缘膜在基于CF的气体/ N 2 / Ar气中进行等离子体干蚀刻来形成主要部件，凹槽，例如沟槽或孔，以便抑制 在凹陷的底部形成异常形状，在有机绝缘膜上形成光致抗蚀剂膜，然后用光致抗蚀剂膜作为蚀刻掩模形成凹部。

公开(公告)号：US20060037627A1

公开(公告)日：2006-02-23

申请号：US11252786

申请日：2005-10-19

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23G1/00

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

公开(公告)号：US06613242B2

公开(公告)日：2003-09-02

申请号：US09983209

申请日：2001-10-23

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： H01L21461

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

公开(公告)号：US06555464B2

公开(公告)日：2003-04-29

申请号：US10046814

申请日：2002-01-17

申请人： Shinichi Fukada ,  Kazuo Nojiri ,  Takashi Yunogami ,  Shoji Hotta ,  Hideo Aoki ,  Takayuki Oshima ,  Nobuyoshi Kobayashi

发明人： Shinichi Fukada ,  Kazuo Nojiri ,  Takashi Yunogami ,  Shoji Hotta ,  Hideo Aoki ,  Takayuki Oshima ,  Nobuyoshi Kobayashi

IPC分类号： H01L214763

CPC分类号： H01L21/76874 ,  H01L21/76804 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： Insulating films 34 through 38 (of which insulating films 34, 36, 38 are silicon nitride films and insulating films 35, 38 are silicon oxide films) are sequentially formed on the wires 33 of the fourth wiring layer and groove pattern 40 is transferred into the insulating film 38 by means of photolithography. An anti-reflection film 41 is formed to fill the grooves 40 of the insulating film 38 and then a resist film 42 carrying a hole pattern 43 is formed. The films are subjected to an etching operation in the presence of the resist film 42 to transfer the hole pattern into the insulating films 38, 37, 36 and part of the insulating film 35. Subsequently, the resist film 42 and the anti-reflection film 41 are removed and the groove pattern 40 and the hole pattern 43 are transferred respectively into the insulating film 37 and the insulating film 35 by using the insulating film 38 as mask.

公开(公告)号：US06537461B1

公开(公告)日：2003-03-25

申请号：US09556319

申请日：2000-04-24

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23F400

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

摘要翻译： 钌，锇及其氧化物可以通过向金属及其氧化物之间的金属及其氧化物之间的催化提供原子供氧气体（通常为臭氧），并且通过臭氧对晶片和反应器没有任何损害来简单而快速地进行蚀刻 并且催化剂不仅用于蚀刻而且还用于室清洁，确保反应堆的稳定运行和高品质装置的生产。

公开(公告)号：US06458602B1

公开(公告)日：2002-10-01

申请号：US09889855

申请日：2001-07-23

申请人： Takashi Yunogami ,  Kenichi Shoji

发明人： Takashi Yunogami ,  Kenichi Shoji

IPC分类号： H01L2100

CPC分类号： H01L27/11507 ,  H01L21/31138 ,  H01L21/32136 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11509 ,  H01L28/55

摘要： According to the invention of the present application, for providing an etching technique for a wiring layer capable of decreasing the degradation of characteristics of a ferroelectric film in FeRAM, a wiring material (LI wiring 18, Al wiring 30) connected with an electrode layer of a ferroelectric film 11 (lower electrode 10, upper electrode 12) is fabricated by dry etching using inducely coupled plasma upon forming the wiring layer and, successively, applied with an asher treatment at a temperature of 300° C. or higher by using inducely coupled plasma while introducing a gas mixture, for example, of O2+CF4+H2O.

摘要翻译： 根据本申请的发明，为了提供能够降低FeRAM中的铁电体膜的特性劣化的布线层的蚀刻技术，可以将与电极层的电极层连接的布线材料（LI布线18，Al布线30） 通过在形成布线层时使用诱导耦合等离子体进行干法蚀刻制造铁电体膜11（下电极10，上电极12），并且通过使用诱导耦合的方式在300℃以上的温度下进行灰处理 同时引入例如O 2 + CF 4 + H 2 O的气体混合物。

公开(公告)号：US06432835B1

公开(公告)日：2002-08-13

申请号：US09411643

申请日：1999-10-04

申请人： Takashi Yunogami ,  Kazuo Nojiri

发明人： Takashi Yunogami ,  Kazuo Nojiri

IPC分类号： H01L21461

CPC分类号： H01L28/60 ,  H01L21/32136 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/75

摘要： Fine etching of ruthenium or ruthenium oxide is suited for a ferroelectric and high dielectric film such as BST. Over a silicon oxide film 46 and a plug 49, a titanium nitride film 50, ruthenium film 51, ruthenium dioxide film 52 and silicon oxide film 53 are stacked successively. After patterning the silicon oxide film 53 with a resist film, the resist film is removed. In the presence of the patterned silicon oxide film 53, the ruthenium dioxide film 52 and ruthenium film 51 are etched under processing pressure of 15 mTorr, plasma source power of 500 W, RF bias power of 200 W, oxygen flow of 715 sccm, chlorine flow of 80 sccm, total flow of about 800 sccm, gas residence time of 49.3 msec, and over etching of 100%.

摘要翻译： 钌或氧化钌的精细蚀刻适用于铁电和高介电膜如BST。 在氧化硅膜46和插头49上，依次层叠氮化钛膜50，钌膜51，二氧化钌膜52和氧化硅膜53。 在用抗蚀剂膜图案化氧化硅膜53之后，去除抗蚀剂膜。 在图案化的氧化硅膜53的存在下，在15mTorr的加工压力，500W的等离子体源功率，200W的RF偏置功率，715sccm的氧气流量，氯气流中蚀刻二氧化钌膜52和钌膜51 流量80sccm，总流量约800sccm，气体停留时间为49.3毫秒，过蚀刻为100％。