公开(公告)号：US4030441A

公开(公告)日：1977-06-21

申请号：US632275

申请日：1975-11-17

申请人： Toshio Nagata ,  Kunijiro Kawasaki ,  Ryuichiro Takahama ,  Yoshifusa Miyatani ,  Sozo Funakoshi

发明人： Toshio Nagata ,  Kunijiro Kawasaki ,  Ryuichiro Takahama ,  Yoshifusa Miyatani ,  Sozo Funakoshi

IPC分类号： B63B21/56 ,  B66C1/06 ,  B66C23/52 ,  H01F7/20

CPC分类号： H01F7/206 ,  B63B21/56 ,  B66C1/06 ,  B66C23/52

摘要： An electromagnet is secured to one end of a tug rope which is to be paid out from a tugboat towards a ship to be tugged, and the electromagnet consists of a plurality of relatively movable magnetic pole members, and hence the whole magnetic pole surface of the electromagnet is composed of a plurality of magnetic pole surfaces of said magnetic pole members. Thus, the end surfaces of said magnetic pole members may accommodate themselves to the curved surface or non-irregular surface of the hull of a ship to be tugged due to the relative, independent movements of the respective magnetic pole members, thereby bringing each of the end surfaces of the magnetic pole members into intimate contact therewith, whereby the end of the tug rope may be rigidly secured to the hull of the ship by means of the electromagnet thus facilitating connection of the tugboat with the ship to be tugged, in positive, safe and simple manner.

摘要翻译： 将电磁铁固定在拖船的一端，该拖缆从拖船向船拖出，电磁铁由多个可相对移动的磁极构成，因此整个磁极表面 电磁体由所述磁极部件的多个磁极面构成。 因此，所述磁极部件的端面可以由于相应的磁极部件的相对的，独立的运动而容纳在船的船体的弯曲表面或非不规则表面上以被拖曳，从而使每个 磁极构件的端面与其紧密接触，由此拖绳的末端可以借助于电磁体刚性地固定到船的船体，从而便于拖船与要被拖曳的船的连接， 安全简单的方式。

公开(公告)号：US07936810B2

公开(公告)日：2011-05-03

申请号：US11518559

申请日：2006-09-08

申请人： Yuan Li ,  Toshio Nagata

发明人： Yuan Li ,  Toshio Nagata

IPC分类号： H03H7/30

CPC分类号： H04L25/03159 ,  H04B1/712 ,  H04B7/0619 ,  H04B7/0669 ,  H04L2025/03426

摘要： Methods and apparatus to perform frequency-domain equalization in high-speed downlink packet access (HSDPA) receivers for wireless channels with large delay-spreads are disclosed. An example method comprises computing a first frequency-domain equalizer (FDE) coefficient for a first set of multipaths, computing a second FDE coefficient for a second set of multipaths, computing a first equalized signal by equalizing a received code division multiple access (CDMA) signal with the first FDE coefficient, computing a second equalized signal by equalizing the received CDMA signal with the second FDE coefficient, delaying the first equalized signal by a delay difference between the first and the second sets, and combining the delayed first equalized signal and the second equalized signal.

摘要翻译： 公开了用于具有大延迟扩展的无线信道的高速下行链路分组接入（HSDPA）接收机中进行频域均衡的方法和装置。 一个示例性方法包括：计算第一组多路径的第一频域均衡器（FDE）系数，计算第二组多路径的第二FDE系数，通过均衡接收到的码分多址（CDMA） 信号与第一FDE系数，通过使接收的CDMA信号与第二FDE系数相等来计算第二均衡信号，将第一均衡信号延迟第一和第二组之间的延迟差，并将延迟的第一均衡信号和 第二均衡信号。

公开(公告)号：US20100123134A1

公开(公告)日：2010-05-20

申请号：US12619835

申请日：2009-11-17

申请人： Toshio NAGATA

发明人： Toshio NAGATA

IPC分类号： H01L21/66 ,  H01L23/544

CPC分类号： H01L22/12 ,  H01L23/544 ,  H01L27/1218 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/30105 ,  H01L2924/00

摘要： A method of producing a semiconductor device includes the steps of preparing an SOQ (Silicon On Quartz) substrate in which a semiconductor layer is formed on a quartz substrate; forming a plurality of semiconductor device forming regions in the SOQ substrate; forming a crack inspection pattern in the SOQ substrate; inspecting the crack inspection pattern to detect a crack in the crack inspection pattern in a first inspection step; and inspecting the semiconductor device forming regions to detect a crack in the semiconductor device forming regions in a second inspection step when the crack is detected in the crack inspection pattern in the first inspection step.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备在石英衬底上形成半导体层的SOQ（石英石英）基片; 在所述SOQ基板中形成多个半导体器件形成区域; 在SOQ基板上形成裂纹检查图案; 在第一检查步骤中检查裂纹检查图案以检测裂纹检查图案中的裂纹; 并且在第一检查步骤中在裂纹检查图案中检测到裂纹时，在第二检查步骤中检查半导体器件形成区域以检测半导体器件形成区域中的裂纹。

公开(公告)号：US20090019686A1

公开(公告)日：2009-01-22

申请号：US12176453

申请日：2008-07-21

申请人： Toshio Nagata ,  Hiroki Segawa ,  Hideki Oki ,  Seiji Nishimura

发明人： Toshio Nagata ,  Hiroki Segawa ,  Hideki Oki ,  Seiji Nishimura

IPC分类号： B23P17/00

CPC分类号： B21D28/30 ,  F16D41/07 ,  F16D2250/00 ,  Y10T29/49 ,  Y10T29/49668 ,  Y10T29/49671 ,  Y10T29/49691 ,  Y10T29/5116 ,  Y10T83/9423

摘要： A method of manufacturing an outer retainer for a one-way clutch having an outward flange at one side edge thereof involves punching out a part of an annular portion having the outward flange by sliding a punch toward an axis of the outer retainer substantially in an axially inner direction from a retainer outer periphery-sided curve portion of the outward flange to a retainer inner periphery-sided curve portion thereof in a way that uses a die and the punch.

摘要翻译： 一种制造用于单向离合器的外保持器的方法，该单向离合器在其一侧边缘处具有向外的凸缘，其包括通过使冲头朝向外保持器的轴线大致沿轴向方向滑动而将具有外凸缘的环形部分的一部分冲压出 从外侧凸缘的保持器外周侧曲线部分到保持器内周侧弯曲部分的内部方向以使用模具和冲头的方式。

公开(公告)号：US07407855B2

公开(公告)日：2008-08-05

申请号：US11202190

申请日：2005-08-12

申请人： Toshio Nagata

发明人： Toshio Nagata

IPC分类号： H01L21/28

CPC分类号： H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28273 ,  H01L21/31612 ,  H01L21/32105 ,  H01L29/42324

摘要： In a first embodiment, Tetraethyl Orthosilicate Si(OC2H5)4 is used at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition. In a second embodiment, annealing is carried out in sparse oxygen gas atmosphere after deposition, to mend crystal defects that occurred during deposition. In a third embodiment, initial temperature of the CVD device is kept at about 400° C., whereby the start of natural oxidation of the deposition surface is prevented and production circumstances of the semiconductor element is not deteriorated. Then, the CVD device is heated up to CVD temperature of about 750° C. or about 650° C., to deposit oxide.

摘要翻译： 在第一实施方案中，在650℃±5℃的工艺温度下使用四乙基原硅酸盐Si（OC2H5）作为成膜材料，以减少沉积期间发生的晶体缺陷。 在第二实施例中，在沉积之后在稀疏氧气气氛中进行退火，以修复在沉积期间发生的晶体缺陷。 在第三实施例中，CVD装置的初始温度保持在约400℃，从而防止沉积表面的自然氧化开始，并且半导体元件的生产环境不会劣化。 然后，将CVD装置加热至约750℃或约650℃的CVD温度以沉积氧化物。

公开(公告)号：US20080081443A1

公开(公告)日：2008-04-03

申请号：US11892855

申请日：2007-08-28

申请人： Toshio Nagata

发明人： Toshio Nagata

IPC分类号： H01L21/20

CPC分类号： H01L21/0242 ,  H01L21/02532 ,  H01L21/02694

摘要： According to the present invention, a method for fabricating a semiconductor device using a Silicon-On-Sapphire (SOS) wafer comprises a process for preparing a sapphire substrate, a process for forming a silicon (Si) layer on the sapphire substrate, a process for implanting silicon ions in the silicon layer, and a process for inducing epitaxial regrowth in the silicon layer after the silicon ion implantation. The silicon ion implantation process induces the number of interstitial Si having crystalline defects in the proximity of the surface of said silicon layer to be reduced below 6.5E2/cm3; and induces an ion implantation amount per unit area of said silicon ions in the proximity of an interface between said sapphire substrate and said silicon layer to be increased to 3.0E19 ions/cm3 or more.

摘要翻译： 根据本发明，使用蓝宝石（Silicon-On-Sapphire，SOS）晶片制造半导体器件的方法包括制备蓝宝石衬底的方法，在蓝宝石衬底上形成硅（Si）层的工艺，工艺 用于在硅层中注入硅离子，以及在硅离子注入之后在硅层中诱导外延再生长的工艺。 硅离子注入工艺引起在所述硅层的表面附近具有晶体缺陷的间隙Si的数目将降低到6.5E2 / cm3以下; 并且在所述蓝宝石衬底和所述硅层之间的界面附近引起所述硅离子的每单位面积的离子注入量增加至3.0E19离子/ cm 3以上。

公开(公告)号：US06524968B2

公开(公告)日：2003-02-25

申请号：US09970692

申请日：2001-10-05

申请人： Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

发明人： Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

IPC分类号： H01L2131

CPC分类号： H01L21/28211 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/31662

摘要： A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

摘要翻译： 提供一种形成绝缘膜的方法，其能够抑制在硅衬底上形成的氧化硅膜的自发生长和由暴露于大气中引起的膜的厚度增加。 在允许具有预定厚度的二氧化硅层在硅晶体的表面上生长之后，二氧化硅的表面暴露于不含羟基的有机气体或暴露于氨气中。

公开(公告)号：US06404121B1

公开(公告)日：2002-06-11

申请号：US09671265

申请日：2000-09-28

申请人： Yoichiro Goto ,  Koichi Nakamura ,  Hiroshi Yamamoto ,  Kazukuni Tamaki ,  Toshio Nagata

发明人： Yoichiro Goto ,  Koichi Nakamura ,  Hiroshi Yamamoto ,  Kazukuni Tamaki ,  Toshio Nagata

IPC分类号： H01J2987

CPC分类号： H01J29/87 ,  Y10T428/28

摘要： An explosion-proof tape is wound on an outer circumference of a panel portion of a cathode-ray tube and a metal band is shrink-fitted on the tape. The tape is composed of a support having at least a layer composed of propylene polymer with a propylene content of not less than 40 weight % or styrene polymer with a styrene content of not less than 50 weight % and an adhesive layer formed on one surface of the support in a manner so that a plurality of fibers with a softening point of not lower than 200° C. are buried in the adhesive layer in a lengthwise direction of the tape. An explosion-proof structure of a cathode-ray tube, wherein a metal band is shrink-fitted on an outer circumference of a panel portion of a cathode-ray tube, through a layer which is formed by winding such an explosion-proof tape as mentioned above, through its adhesive layer.

摘要翻译： 将防爆胶带缠绕在阴极射线管的面板部分的外圆周上，并且将金属带收缩配合在带上。 胶带由具有至少一层由丙烯含量不小于40重量％的丙烯聚合物的层或苯乙烯含量不小于50重量％的苯乙烯聚合物构成的载体和在一个表面上形成的粘合剂层 以使软化点不低于200℃的多根纤维沿带的长度方向埋设在粘合剂层中的方式进行支撑。 一种阴极射线管的防爆结构，其中金属带被收缩配合在阴极射线管的面板部分的外圆周上，该层通过将这种防爆带卷绕成 通过其粘合剂层。

公开(公告)号：US06319763B1

公开(公告)日：2001-11-20

申请号：US09497500

申请日：2000-02-04

申请人： Makoto Nakazawa ,  Toshio Nagata

发明人： Makoto Nakazawa ,  Toshio Nagata

IPC分类号： H01L218242

CPC分类号： H01L28/82 ,  H01L21/3185 ,  H01L27/10852

摘要： A lower capacitor electrode is formed on an interlayer dielectric, and then a resultant specimen is subjected to reduction and thermal nitriding in an ammonia gas atmosphere in a deposition chamber wherein pressure has been reduced to a range from 533 Pa to 1333 Pa. A silicon nitride film is then formed on the lower electrode and the interlayer dielectric. A time for carrying out the reduction and thermal nitriding is longer than a film thickness saturation time of the silicon nitride film formed on the interlayer dielectric.

摘要翻译： 在层间电介质上形成下层电容电极，然后将所得样品在沉积室中的氨气气氛中进行还原和热氮化，其中压力已经降低到533Pa至1333Pa，氮化硅 然后在下电极和层间电介质上形成膜。 进行还原和热氮化的时间比形成在层间电介质上的氮化硅膜的膜厚饱和时间长。

公开(公告)号：US5878290A

公开(公告)日：1999-03-02

申请号：US181000

申请日：1994-01-14

申请人： Hidetoshi Masuda ,  Toshio Nagata ,  Hidenori Taniguchi

发明人： Hidetoshi Masuda ,  Toshio Nagata ,  Hidenori Taniguchi

IPC分类号： G03B7/16 ,  G03B15/05 ,  H05B41/32 ,  G03B15/03

CPC分类号： G03B7/16 ,  G03B15/05 ,  H05B41/325 ,  G03B2215/0557

摘要： A camera with a red-eye preventing feature includes an operation unit for causing the red-eye phenomenon preventing feature to function, a timer for measuring a predetermined period when the red-eye phenomenon preventing feature functions, an indicating device for indicating the state of the timer, and an exposure unit for performing an exposure operation. The exposure unit can perform the exposure operation even during the predetermined time period.

摘要翻译： 具有防红眼功能的相机具有用于使红眼现象防止特征功能起作用的操作单元，用于测量红眼现象防止特征功能时的预定时间段的定时器，用于指示红眼现象防止特征的状态的指示装置 定时器和用于进行曝光操作的曝光单元。 曝光单元也可以在预定时间段内进行曝光操作。