Ion implantation mask forming method
    21.
    发明授权
    Ion implantation mask forming method 有权
    离子注入掩模成型方法

    公开(公告)号:US08241512B2

    公开(公告)日:2012-08-14

    申请号:US12289637

    申请日:2008-10-31

    Abstract: A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.

    Abstract translation: 形成离子注入掩模的方法包括在半导体衬底上形成场区,在半导体衬底上形成非晶碳层,在非晶碳层上形成硬掩模层,在硬掩模层上形成蚀刻掩模图案, 蚀刻硬掩模层和非晶碳层,通过蚀刻掩模图案露出场区,蚀刻硬掩模层和无定形碳层形成硬掩模层图案和无定形碳层图案。

    CASCADE ENZYME-LINKED IMMUNOSORBENT ASSAY
    22.
    发明申请
    CASCADE ENZYME-LINKED IMMUNOSORBENT ASSAY 失效
    CASCADE ENZYME连接免疫测定

    公开(公告)号:US20100196937A1

    公开(公告)日:2010-08-05

    申请号:US12679830

    申请日:2008-05-30

    CPC classification number: G01N33/54326 G01N33/581 G01N33/587 G01N2333/976

    Abstract: The present invention relates to a cascade enzyme-linked immunosorbent assay, more precisely a cascade enzyme-linked immunosorbent assay using magnetic microparticles (MMPs) immobilized with the target antigen specific primary antibody and silica nanoparticles (SPs) immobilized with a cascade reaction initiator and the antigen-specific secondary antibody. When the method of the present invention is applied in the detection of an antigen in biosamples, the detection sensitivity can be significantly increased.

    Abstract translation: 本发明涉及级联酶联免疫吸附测定法,更确切地说,使用固定有靶抗原特异性一级抗体的磁性微粒(MMP)和固定有级联反应引发剂的二氧化硅纳米颗粒(SP)的级联酶联免疫吸附测定法, 抗原特异性二抗。 当将本发明的方法应用于生物样品中的抗原检测时,可以显着提高检测灵敏度。

    Non-volatile memory device for 2-bit operation and method of fabricating the same
    23.
    发明授权
    Non-volatile memory device for 2-bit operation and method of fabricating the same 失效
    用于2位操作的非易失性存储器件及其制造方法

    公开(公告)号:US07675105B2

    公开(公告)日:2010-03-09

    申请号:US11376518

    申请日:2006-03-15

    Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

    Abstract translation: 提供了一种用于2位操作的非易失性存储器件及其制造方法。 非易失性存储器件包括在半导体衬底上沿着字线方向延伸的有源区和栅极,并且重复地交叉; 电荷存储层,设置在所述栅极的下方,并限制在所述栅极和所述有源区域交叉的部分; 形成在电荷存储层上的电荷阻挡层; 形成在电荷存储层下面的隧道介电层; 在由栅极暴露的有源区中形成的第一和第二源/漏区; 以及与字线方向交叉的第一和第二位线。 有源区可以形成为第一之字形图案和/或栅极可以以与第一曲折图案对称的第二曲折图案形成。

    Method of manufacturing mask
    25.
    发明授权
    Method of manufacturing mask 失效
    制作面膜的方法

    公开(公告)号:US07539970B2

    公开(公告)日:2009-05-26

    申请号:US11590244

    申请日:2006-10-31

    CPC classification number: G03F1/70 G03F1/36

    Abstract: A method of manufacturing a mask includes designing a second mask data pattern for forming a first mask data pattern, creating a first emulation pattern, which is determined from the second mask data pattern, using a first emulation, creating a second emulation pattern, which is determined from the first emulation pattern, using a second emulation, comparing a pattern, in which the first and second emulation patterns overlap, with the first mask data pattern, and manufacturing a mask layer, which corresponds to the second mask data pattern, according to results of the comparison.

    Abstract translation: 制造掩模的方法包括设计用于形成第一掩模数据图案的第二掩模数据图案,使用第一仿真创建从第二掩模数据图案确定的第一仿真图案,创建第二仿真图案,其是第二仿真模式 根据第一仿真模式确定,使用第二仿真,将第一和第二仿真模式重叠的模式与第一掩模数据模式进行比较,并根据第二掩模数据模式制造对应于第二掩模数据模式的掩模层 比较结果。

    METHODS OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING FIN-FET
    26.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING FIN-FET 失效
    制造FIN-FET的半导体器件制造方法

    公开(公告)号:US20080124871A1

    公开(公告)日:2008-05-29

    申请号:US11773372

    申请日:2007-07-03

    CPC classification number: H01L29/66795 H01L29/7851

    Abstract: A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.

    Abstract translation: 一种制造包括鳍状场效应晶体管(Fin-FET)的半导体器件的方法包括:在半导体衬底上形成牺牲棒,对牺牲棒进行构图以在半导体衬底上形成牺牲岛,形成器件隔离层以填充第 牺牲岛,选择性地去除牺牲岛以将牺牲岛下方的半导体衬底暴露出来,并且使用器件隔离层作为蚀刻掩模来各向异性蚀刻暴露的半导体衬底以形成凹陷沟道区。 凹陷沟道区域允许晶体管的沟道宽度和沟道长度增加,从而减少在高度集成的半导体器件中的短沟道效应和窄沟道效应的发生。

    Cascade enzyme-linked immunosorbent assay
    28.
    发明授权
    Cascade enzyme-linked immunosorbent assay 失效
    级联酶联免疫吸附测定

    公开(公告)号:US08642356B2

    公开(公告)日:2014-02-04

    申请号:US12679830

    申请日:2008-05-30

    CPC classification number: G01N33/54326 G01N33/581 G01N33/587 G01N2333/976

    Abstract: The present invention relates to a cascade enzyme-linked immunosorbent assay, more precisely a cascade enzyme-linked immunosorbent assay using magnetic microparticles (MMPs) immobilized with the target antigen specific primary antibody and silica nanoparticles (SPs) immobilized with a cascade reaction initiator and the antigen-specific secondary antibody. When the method of the present invention is applied in the detection of an antigen in biosamples, the detection sensitivity can be significantly increased.

    Abstract translation: 本发明涉及级联酶联免疫吸附测定法,更确切地说,使用固定有靶抗原特异性一级抗体的磁性微粒(MMP)和固定有级联反应引发剂的二氧化硅纳米颗粒(SP)的级联酶联免疫吸附测定法, 抗原特异性二抗。 当将本发明的方法应用于生物样品中的抗原检测时,可以显着提高检测灵敏度。

    RETARGET PROCESS MODELING METHOD, METHOD OF FABRICATING MASK USING THE RETARGET PROCESS MODELING METHOD, COMPUTER READABLE STORAGE MEDIUM, AND IMAGING SYSTEM
    30.
    发明申请
    RETARGET PROCESS MODELING METHOD, METHOD OF FABRICATING MASK USING THE RETARGET PROCESS MODELING METHOD, COMPUTER READABLE STORAGE MEDIUM, AND IMAGING SYSTEM 审中-公开
    重定向过程建模方法,使用返程过程建模方法,计算机可读存储介质和成像系统制作掩模的方法

    公开(公告)号:US20110202892A1

    公开(公告)日:2011-08-18

    申请号:US12974681

    申请日:2010-12-21

    CPC classification number: G03F1/36

    Abstract: In a retarget process modeling method, an effect according to density of patterns, and shapes or distances with respect to neighboring patterns may be sufficiently reflected while a relatively small amount of time and few costs are consumed. The retarget process modeling method involves obtaining prediction data, by a modelling calculating unit, on a test layout using a first process model, obtaining bias data based on measurement data of the test layout and the prediction data, using the bias data to check and detect corresponding features of a representative pattern affected by a photoresist (PR) flow rate, generating kernels including a PR flow kernel in consideration of a sub resolution assist feature (SRAF) pattern of the representative pattern to determine an uncalibrated model including the kernels and obtaining a second process model by fitting the uncalibrated model to the measurement data to obtain a second process model.

    Abstract translation: 在重新定向过程建模方法中,可以充分反映根据模式密度,相对于相邻图案的形状或距离的效果,同时消耗相对少量的时间和少量成本。 重新定位过程建模方法包括利用建模计算单元使用第一过程模型在测试布局上获取预测数据,使用偏差数据来检查和检测基于测试布局和预测数据的测量数据获得偏差数据 考虑到代表性模式的子分辨率辅助特征(SRAF)模式,产生受光致抗蚀剂(PR)流速影响的代表性图案的对应特征,产生包括PR流核的内核,以确定包括该内核的未校准模型,并获得 第二过程模型通过将未校准模型拟合到测量数据中以获得第二过程模型。

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