公开(公告)号：US09252260B2

公开(公告)日：2016-02-02

申请号：US13939556

申请日：2013-07-11

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  Breandan Pol Og O hAnnaidh ,  Seamus P. Whiston ,  William Allan Lane ,  Donai P. McAuliffe

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/78 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/66477 ,  H01L29/66681 ,  H01L29/7824

Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.

Abstract translation: 一种半导体器件，其具有与半导体层相邻的第一层，并且还包括至少一个场修改结构，其定位使得在使用中，场修改结构处的电位在半导体的界面区域处引起E场矢量 和要修改的第一层。

公开(公告)号：US10468484B2

公开(公告)日：2019-11-05

申请号：US14284148

申请日：2014-05-21

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  William Allan Lane ,  Seamus P. Whiston

IPC: H01L29/08 ,  H01L29/732 ,  H01L29/45 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06

Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.

公开(公告)号：US20190131404A1

公开(公告)日：2019-05-02

申请号：US15798182

申请日：2017-10-30

Applicant: Analog Devices Global Unlimited Company

Inventor： Edward John Coyne

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/808 ,  H01L29/06 ,  H01L29/66

Abstract: A JFET is provided with a very low gate current. In tests the excess gate current above the theoretical minimum current for a similarly sized reverse biased p-n junction was not observed. The JFET includes a lightly doped top gate and doped regions beneath the drain of the JFET.

公开(公告)号：US09935628B2

公开(公告)日：2018-04-03

申请号：US14937705

申请日：2015-11-10

Applicant: Analog Devices Global

Inventor： Edward John Coyne

IPC: H01L29/73 ,  H01L29/06 ,  H03K17/567 ,  H01L27/02 ,  H01L29/735 ,  H03K17/16

CPC classification number: H03K17/567 ,  H01L27/0266 ,  H01L29/735 ,  H03K17/165 ,  H03K17/168

Abstract: A transistor switch device is provided that exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This can reduce transient drive current flows that may perturb other components.

公开(公告)号：US09653455B1

公开(公告)日：2017-05-16

申请号：US14937627

申请日：2015-11-10

Applicant: Analog Devices Global

Inventor： Edward John Coyne

IPC: H01L27/06 ,  H01L29/08 ,  H01L29/73 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L27/0623 ,  H01L21/823475 ,  H01L27/0705 ,  H01L27/1203 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66234 ,  H01L29/66666 ,  H01L29/7302 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7827

Abstract: A transistor switch device is provided that exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This can reduce transient drive current flows that may perturb other components.

公开(公告)号：US09362356B2

公开(公告)日：2016-06-07

申请号：US14539593

申请日：2014-11-12

Applicant: ANALOG DEVICES GLOBAL

Inventor： Breandan Pol Og O hAnnaidh ,  Seamus Paul Whiston ,  Edward John Coyne ,  William Allan Lane ,  Donal Peter McAuliffe

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/0692 ,  H01L29/0847 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66568 ,  H01L29/78 ,  H01L29/7835 ,  H01L29/808

Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.

Abstract translation: 提供一种晶体管，其中细长的漏极区域具有形成在晶体管的部分中的端部，其晶体管结构的特征已被修改或省略。 这些结构减少了漏极端部处的电流或电场梯度。 这提供了具有改善的导通状态击穿性能而不牺牲关断状态击穿性能的晶体管。

公开(公告)号：US20160094026A1

公开(公告)日：2016-03-31

申请号：US14496839

申请日：2014-09-25

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  John Twomey ,  Seamus P. Whiston ,  David J. Clarke ,  Donal P. McAuliffe ,  William Allan Lane ,  Stephen Denis Heffernan ,  Brian A. Moane ,  Brian Michael Sweeney ,  Patrick Martin McGuinness

IPC: H02H9/04 ,  H02H7/16

CPC classification number: H02H9/044 ,  H01L27/0259 ,  H02H7/16

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。

公开(公告)号：US20150340440A1

公开(公告)日：2015-11-26

申请号：US14284148

申请日：2014-05-21

Applicant: ANALOG DEVICES GLOBAL

Inventor： Edward John Coyne ,  William Allan Lane ,  Seamus P. Whiston

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L29/732 ,  H01L29/45

CPC classification number: H01L29/0821 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/42304 ,  H01L29/45 ,  H01L29/66272 ,  H01L29/732

Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.

Abstract translation: 提供了一种改进的双极晶体管，其可以在集电极电压的有限范围内提供改进的增益，早期电压，击穿电压和线性度。 已知晶体管的增益可以随集电极电压而变化。 本文件教导了通过提供用于耗尽区域的结构来减少该变化的方法，该装置优先耗尽。 因此，晶体管的响应可以更线性化。