公开(公告)号：US09842759B2

公开(公告)日：2017-12-12

申请号：US15144446

申请日：2016-05-02

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC: C23C16/50 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

公开(公告)号：US09739666B2

公开(公告)日：2017-08-22

申请号：US14257665

申请日：2014-04-21

Applicant: Applied Materials, Inc.

Inventor： Kailash Kiran Patalay ,  Aaron Muir Hunter

IPC: G01K15/00 ,  G01J5/00 ,  G01K13/00 ,  G01J5/10 ,  H01L21/67

CPC classification number: G01J5/10 ,  G01J2005/0048 ,  H01L21/67115 ,  H01L21/67248

Abstract: The embodiments described herein generally relate to methods of noise compensation for proper temperature detection in thermal processing chambers and devices for achieving the same. Methods can include determining noise produced by a lamp zone and extrapolating the noise from the detected photocurrent. Devices can include a processing chamber, a substrate support disposed in the processing chamber, the substrate support having a high thermal mass, a pyrometer below the substrate support and oriented to view radiation emitted by the substrate and a controller configured to subtract a time invariant noise component and a time variant noise component from the pyrometer signal.

公开(公告)号：US09673074B2

公开(公告)日：2017-06-06

申请号：US14189664

申请日：2014-02-25

Applicant: Applied Materials, Inc.

Inventor： Hanbing Wu ,  Anantha K. Subramani ,  Wei W. Wang ,  Aaron Muir Hunter

IPC: H01L21/67 ,  H01L21/687 ,  G01J5/00 ,  G01J5/08

CPC classification number: H01L21/67248 ,  G01J5/0007 ,  G01J5/0818 ,  H01L21/68742

Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.

公开(公告)号：US09595459B2

公开(公告)日：2017-03-14

申请号：US14832564

申请日：2015-08-21

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph M. Ranish ,  Aaron Muir Hunter

IPC: H01L21/67 ,  B23K26/06 ,  B23K26/00 ,  B23K26/08 ,  F27B17/00 ,  B23K26/12

CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US09385004B2

公开(公告)日：2016-07-05

申请号：US14298389

申请日：2014-06-06

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Norman Tam ,  Jeffrey Tobin ,  Jiping Li ,  Martin Tran

IPC: H01L21/683 ,  H01L21/324 ,  F16C13/00 ,  B05D7/22 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material.

Abstract translation: 本公开的实施例一般涉及在热处理室中使用的支撑筒。 在一个实施例中，支撑筒包括具有内周表面和外周表面的环体，其中环体包括不透明的石英玻璃材料，并且其中环体涂覆有光学透明层。 光学透明层的热膨胀系数基本上与不透明的石英玻璃材料匹配或类似，以减少在高热负荷下可能引起热应力的热膨胀失配。 在一个实例中，不透明石英玻璃材料是合成黑色石英，光学透明层包括透明的熔融石英材料。

公开(公告)号：US20160139417A1

公开(公告)日：2016-05-19

申请号：US15003996

申请日：2016-01-22

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC: G02B27/10 ,  G02B27/00 ,  G02B27/12 ,  G02B27/30 ,  G02B27/14

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US09330955B2

公开(公告)日：2016-05-03

申请号：US14218597

申请日：2014-03-18

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC: B23Q3/00 ,  H01L21/687

CPC classification number: H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract translation: 提供了用于半导体处理的支撑环。 支撑环包括由内边缘和外边缘限定的环形体。 内边缘和外边缘围绕中心轴线是同心的。 环形体还包括在内边缘处从环形体的第一侧延伸的第一侧，第二侧和凸起的环形肩部。 支撑环还包括在第一侧上的涂层。 涂层具有邻近凸起的环形肩部的厚度减小的内部区域。

公开(公告)号：US20130323936A1

公开(公告)日：2013-12-05

申请号：US13904810

申请日：2013-05-29

Applicant: Lawrence Livermore National Security, LLC ,  Applied Materials, Inc.

Inventor： JOSEPH M. RANISH ,  Aaron Muir Hunter ,  Thomas F. Soules ,  Alexander M. Rubenchik

IPC: H05B3/00 ,  H01L21/268

CPC classification number: H05B3/00 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68792 ,  Y10S148/09 ,  Y10S148/093

Abstract: Embodiments of the present invention provide apparatus and methods for performing rapid thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a heating source disposed outside a chamber body and configured to provide thermal energy towards a processing volume. The substrate support defines a substrate supporting plane, and the substrate support is configured to support the substrate in the substrate supporting plane. The heating source includes a frame member having an inner wall surrounding an area large enough to encompass a surface area of the substrate, and a plurality of diode laser tiles mounted on the inner wall of the frame member. Each of the plurality of diode laser tiles is directed towards a corresponding area in the processing volume.

Abstract translation: 本发明的实施例提供了用于执行快速热处理的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该设备包括设置在室主体外部并被配置为朝向处理容积提供热能的加热源。 衬底支撑件限定衬底支撑平面，并且衬底支撑件构造成在衬底支撑平面中支撑衬底。 加热源包括框架构件，该框架构件具有包围足以包围基板的表面区域的区域的内壁和安装在框架构件的内壁上的多个二极管激光瓦片。 多个二极管激光瓦片中的每一个被引导到处理体积中的相应区域。

公开(公告)号：US11945045B2

公开(公告)日：2024-04-02

申请号：US17090709

申请日：2020-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph M. Ranish

IPC: B23K26/06 ,  B23K26/073 ,  B23K26/352 ,  H01L21/268 ,  H01L21/324 ,  H01L21/02

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/268 ,  H01L21/324 ,  H01L21/02532 ,  H01L21/02675

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US11495479B2

公开(公告)日：2022-11-08

申请号：US16553778

申请日：2019-08-28

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter ,  Anzhong Chang

IPC: H01L21/67 ,  G02B6/08 ,  G02B6/42 ,  G02B6/00

Abstract: A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.