公开(公告)号：US20150170935A1

公开(公告)日：2015-06-18

申请号：US14215417

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J2237/334

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括具有高纵横比沟槽的图案化衬底的离子轰击。 离子轰击包括含氟离子，并且可以在穿过沟槽外部的水平衬套部分但在沟槽的开口附近之前停止离子轰击。 然后，该方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并从沟槽的外部和沟槽的侧壁上除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。

公开(公告)号：US20140179111A1

公开(公告)日：2014-06-26

申请号：US13791125

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US09960049B2

公开(公告)日：2018-05-01

申请号：US15161783

申请日：2016-05-23

Applicant: Applied Materials, Inc.

Inventor： Hanshen Zhang ,  Jie Liu ,  Zhenjiang Cui

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/31122

Abstract: In one implementation, a method of removing a metal-containing layer is provided. The method comprises generating a plasma from a fluorine-containing gas. The plasma comprises fluorine radicals and fluorine ions. The fluorine ions are removed from the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions. A substrate comprising a metal-containing layer is exposed to the reactive gas. The reactive gas dopes at least a portion of the metal-containing layer to form a metal-containing layer doped with fluorine radicals. The metal-containing layer doped with fluorine radicals is exposed to a nitrogen and hydrogen containing gas mixture and the reactive gas to remove at least a portion of the metal-containing layer doped with fluorine radicals.

公开(公告)号：US09576788B2

公开(公告)日：2017-02-21

申请号：US14695392

申请日：2015-04-24

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Seung Park ,  Anchuan Wang ,  Zhenjiang Cui ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/115 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract translation: 描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。 该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。 该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。 该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。 然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。 本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

公开(公告)号：US20160314961A1

公开(公告)日：2016-10-27

申请号：US14695392

申请日：2015-04-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Jie Liu ,  Seung Park ,  Anchuan Wang ,  Zhenjiang Cui ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L27/115 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract translation: 描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。 该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。 该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。 该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。 然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。 本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

公开(公告)号：US09478434B2

公开(公告)日：2016-10-25

申请号：US14543683

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在除去过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US09449845B2

公开(公告)日：2016-09-20

申请号：US14584099

申请日：2014-12-29

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US20160218018A1

公开(公告)日：2016-07-28

申请号：US14607883

申请日：2015-01-28

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Vinod R. Purayath ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L27/115 ,  H01L21/8234

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/32135 ,  H01L21/823437 ,  H01L27/11582

Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten slabs from one another as needed. The vertically arranged tungsten slabs may form the walls of a trench during manufacture of a vertical flash memory cell. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a remote plasma region. Process parameters are provided which result in uniform tungsten recess within the trench. A low electron temperature is maintained in the substrate processing region to achieve high etch selectivity and uniform removal throughout the trench.

Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 所述方法根据需要将垂直排列的钨板彼此电分离。 在垂直闪存单元的制造期间，垂直布置的钨板可以形成沟槽的壁。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 这些方法包括将电短路钨板暴露于在远程等离子体区域中形成的远程激发的氟。 提供了在沟槽内产生均匀的钨凹槽的工艺参数。 在基板处理区域中保持低电子温度，以实现高蚀刻选择性并且在整个沟槽中均匀地去除。

公开(公告)号：US20150126039A1

公开(公告)日：2015-05-07

申请号：US14269544

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Jingchun Zhang ,  Anchuan Wang ,  Jie Liu

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/3346

Abstract: Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X

Abstract translation: 描述了相对于硅锗选择性地蚀刻硅的方法。 该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。 等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。 对于X

公开(公告)号：US08951429B1

公开(公告)日：2015-02-10

申请号：US14136200

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Xikun Wang ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01L21/31122

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括使用由含氟前体与氨（NH 3）组合形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在该过程中增加氨的流动首先除去具有较高氧化配位数的氧化钨的典型表面，然后选择性地蚀刻较低的氧化氧化钨。 在一些实施例中，氧化钨蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。